Optical systems fabricated by printing-based assembly

• US 7,972,875 B2
• Filed: 10/31/2007
• Issued: 07/05/2011
• Est. Priority Date: 01/17/2007
• Status: Active Grant

• Current Assignee: Board of Trustees of The University of Illinois, X Display Company Technology Limited (Sensinnovat BVBA)
• Original Assignee: Board of Trustees of The University of Illinois
• Inventors: Stoykovich, Mark, Ko, Heung-Cho, Nuzzo, Ralph, Motala, Michael, Ahn, Jong-Hyun, Yu, Chang-Jae, Park, Sang-II, Meitl, Matthew, Menard, Etienne, Rogers, John, Baca, Alfred J., Yoon, Jongseung
• Primary Examiner(s): Dickey; Thomas L
• Assistant Examiner(s): YUSHIN, NIKOLAY K
• Application Number:
  US11/981,380
• Publication Number:
  US 20100283069A1
• Time in Patent Office: 1,343 Days
• Field of Search: 438/118, 438/584, 438/623, 438/725, 438/21, 438/697, 438/760, 357/9, 357/79, 357/213, 257/9, 257/79, 257/213, 257/432, 257/E21.206, 257/E21.243
• US Class Current: 438/21
• CPC Class Codes: B81C 2201/0185 Printing, e.g. microcontact printing
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: H01L 21/00 Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/75753 Means for optical alignment, e.g. sensors
• CPC Class Codes: H01L 2224/75901 using a computer, e.g. fully- or semi-automatic bonding
• CPC Class Codes: H01L 2224/7598 specially adapted for batch processes
• CPC Class Codes: H01L 2224/83 using a layer connector
• CPC Class Codes: H01L 2224/83005 being a temporary or sacrificial substrate
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 24/29 of an individual layer connector
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 24/72 Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
• CPC Class Codes: H01L 24/75 Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 25/042 the devices being arranged next to each other solar cells H01L31/042
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 25/50 Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 27/1214 : comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/124 : with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1285 : using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 27/1292 : using liquid deposition, e.g. printing
• CPC Class Codes: H01L 27/14627 : Microlenses
• CPC Class Codes: H01L 27/14636 : Interconnect structures
• CPC Class Codes: H01L 27/14643 : Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 29/78603 : characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78681 : having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2933/005 : relating to encapsulations
• CPC Class Codes: H01L 2933/0058 : relating to optical field-shaping elements
• CPC Class Codes: H01L 2933/0066 : relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 2933/0091 : Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 31/02005 : for device characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/02008 : for solar cells or solar cell modules
• CPC Class Codes: H01L 31/02168 : the coatings being antireflective or having enhancing optical properties for the solar cells
• CPC Class Codes: H01L 31/02325 : the optical elements not being integrated nor being directly associated with the device
• CPC Class Codes: H01L 31/02327 : the optical elements being integrated or being directly associated to the device, e.g. back reflectors optical coatings H01L31/0216
• CPC Class Codes: H01L 31/0288 : characterised by the doping material
• CPC Class Codes: H01L 31/03046 : including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
• CPC Class Codes: H01L 31/043 : Mechanically stacked PV cells
• CPC Class Codes: H01L 31/0525 : including means to utilise heat energy directly associated with the PV cell, e.g. integrated Seebeck elements
• CPC Class Codes: H01L 31/0543 : comprising light concentrating means of the refractive type, e.g. lenses
• CPC Class Codes: H01L 31/0547 : comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
• CPC Class Codes: H01L 31/0693 : the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
• CPC Class Codes: H01L 31/0725 : Multiple junction or tandem solar cells
• CPC Class Codes: H01L 31/167 : the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
• CPC Class Codes: H01L 31/1804 : comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/1824 : Special manufacturing methods for microcrystalline Si, uc-Si
• CPC Class Codes: H01L 31/1868 : Passivation
• CPC Class Codes: H01L 31/1876 : Particular processes or apparatus for batch treatment of the devices
• CPC Class Codes: H01L 31/1892 : methods involving the use of temporary, removable substrates
• CPC Class Codes: H01L 33/005 : Processes
• CPC Class Codes: H01L 33/0093 : Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 : Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/06 : within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/30 : containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01L 33/483 : Containers
• CPC Class Codes: H01L 33/52 : Encapsulations
• CPC Class Codes: H01L 33/54 : having a particular shape
• CPC Class Codes: H01L 33/56 : Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/58 : Optical field-shaping elements
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01S 5/021 : Silicon based substrates
• CPC Class Codes: H01S 5/02251 : using optical fibres
• CPC Class Codes: H01S 5/183 : having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
• CPC Class Codes: H01S 5/3013 : AIIIBV compounds
• CPC Class Codes: H01S 5/34326 : with a well layer based on InGa(Al)P, e.g. red laser
• CPC Class Codes: H01S 5/423 : having a vertical cavity
• CPC Class Codes: Y02E 10/52 : PV systems with concentrators
• CPC Class Codes: Y02E 10/544 : Solar cells from Group III-V materials
• CPC Class Codes: Y02E 10/545 : Microcrystalline silicon PV cells
• CPC Class Codes: Y02E 10/547 : Monocrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 : Manufacturing or production processes characterised by the final manufactured product

Abstract

Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.

Claims

1. A method of making a semiconductor-based optical system, said method comprising the steps of:

providing a device substrate having a receiving surface;

assembling a printable semiconductor element on said receiving surface of said substrate via contact printing; and

planarizing said printable semiconductor element assembled on said receiving surface, thereby making said semiconductor-based optical system, wherein said planarizing step generates a substantially planar top surface on said device substrate having said printable semiconductor element.

2. The method of claim 1 wherein said planarizing step comprises embedding said printable semiconductor element into said planarizing layer.

3. The method of claim 1 further comprising the step of curing, polymerizing or cross linking said planarizing layer having said printable semiconductor element embedded therein, thereby fixing said printable semiconductor element in said planarizing layer.

4. The method of claim 1 further comprising the steps of patterning one or more electrical interconnects to an exposed surface of said planarized printable semiconductor element of said substantially planar top surface.

5. The method of claim 1 wherein said printable semiconductor element is a printable electronic device or electronic device component.

6. The method of claim 1 wherein said printable semiconductor element is an LED, a laser, a solar cell, a sensor, a diode, a transistor, a p-n junction, an integrated circuit, or a photodiode.

7. The method of claim 1 wherein said printable semiconductor element comprises said semiconductor structure integrated with at least one additional structure selected from the group consisting of:

another semiconductor structure;

a dielectric structure;

conductive structure, and an optical structure.

8. The method of claim 1 wherein said printable semiconductor element comprises said semiconductor structure integrated with at least one electronic device component selected from the group consisting of:

an electrode, a dielectric layer, an optical coating, a metal contact pad and a semiconductor channel.

9. The method of claim 1 wherein said printable semiconductor element has a length selected from the range of 0.0001 millimeters to 1000 millimeters, a width selected from the range of 0.0001 millimeters to 1000 millimeters and a thickness selected from the range of 0.00001 millimeters to 3 millimeters.

10. The method of claim 1 wherein said printable semiconductor element comprises a semiconductor structure having a length selected from the range of 0.02 millimeters to 30 millimeters, and a width selected from the range of 0.02 millimeters to 30 millimeters.

11. The method of claim 1 wherein said printable semiconductor element comprises a semiconductor structure having a length selected from the range of 0.1 millimeters to 1 millimeter, and a width selected from the range of 0.1 millimeters to 1 millimeter.

12. The method of claim 1 wherein said printable semiconductor element comprises a semiconductor structure having a length selected from the range of 1 millimeters to 10 millimeters, and a width selected from the range of 1 millimeter to 10 millimeters.

13. The method of claim 1 wherein said printable semiconductor element comprises a semiconductor structure having a thickness selected from the range of 0.0003 millimeters to 0.3 millimeters.

14. The method of claim 1 wherein said printable semiconductor element comprises a semiconductor structure having a thickness selected from the range of 0.002 millimeters to 0.02 millimeters.

15. The method of claim 1 comprising the steps:

assembling a plurality of printable semiconductor elements on said receiving surface of said substrate via contact printing; and

planarizing said plurality of printable semiconductor elements assembled on said receiving surface.

16. The method of claim 15 wherein said plurality of printable semiconductor elements comprises one or more electronic devices selected from the group consisting of:

a LED, a laser, a solar cell, a sensor, a diode, a transistor, a p-n junction, an integrated circuit, and a photodiode.

17. The method of claim 1 further comprising the step of providing a planarizing layer on said receiving surface of said substrate, wherein said planarizing step comprises embedding said printable semiconductor element in said planarizing layer provided on said receiving surface of said device substrate.

18. The method of claim 17 wherein said planarizing layer is provided to said receiving surface prior to said step of assembling said printable semiconductor element on said receiving surface.

19. The method of claim 17 wherein said planarizing layer is provided to said receiving surface after said step of assembling said printable semiconductor element on said receiving surface.

20. The method of claim 17 wherein said planarizing layer has a thickness selected from the range of 10 nanometers to 1000 microns.

21. The method of claim 17 wherein said planarizing layer comprises a prepolymer or a polymer.

22. A method of making a semiconductor-based optical system, said method comprising the steps of:

providing an optical component having a receiving surface; and

assembling a printable semiconductor element on said receiving surface of said optical component via contact printing;

wherein said printable semiconductor element comprises a semiconductor structure having a length selected from the range of 0.0001 millimeters to 1000 millimeters, a width selected from the range of 0.0001 millimeters to 1000 millimeters and a thickness selected from the range of 0.00001 millimeters to 3 millimeters;

wherein said optical component is an array of light collecting optical components, light concentrating optical components, light diffusing optical components, dispersing optical components or light filtering optical components and each of said components in said array is spatially aligned with respect to at least one of said printable semiconductor elements.

23. The method of claim 22 wherein said printable semiconductor element comprises a semiconductor structure having a length selected from the range of 0.02 millimeters to 30 millimeters, and a width selected from the range of 0.02 millimeters to 30 millimeters.

24. The method of claim 22 wherein said printable semiconductor element comprises a semiconductor structure having a length selected from the range of 0.1 millimeters to 1 millimeter, and a width selected from the range of 0.1 millimeters to 1 millimeter.

25. The method of claim 22 wherein said printable semiconductor element comprises a semiconductor structure having a length selected from the range of 1 millimeters to 10 millimeters, and a width selected from the range of 1 millimeter to 10 millimeters.

26. The method of claim 22 wherein said printable semiconductor element comprises a semiconductor structure having a thickness selected from the range of 0.0003 millimeters to 0.3 millimeters.

27. The method of claim 22 wherein said printable semiconductor element comprises a semiconductor structure having a thickness selected from the range of 0.002 millimeters to 0.02 millimeters.

28. The method of claim 22 comprising assembling a plurality of printable semiconductor elements on said receiving surface of said optical component via contact printing;

wherein each of said printable semiconductor element comprises a semiconductor structure having a length selected from the range of 0.0001 millimeters to 1000 millimeters, a width selected from the range of 0.0001 millimeters to 1000 millimeters and a thickness selected from the range of 0.00001 millimeters to 3 millimeters.

29. The method of claim 22 wherein said optical component is selected from the group consisting of a lens, a lens array, a reflector, an array of reflectors, a waveguide, an array of waveguides, an optical coating, an array of optical coatings, an optical filter, an array of optical filters, a fiber optic element and an array of fiber optic elements.

30. The method of claim 22 wherein said optical component is a lens array fabricated by replica molding.

31. The method of claim 22 wherein each of said components in said array is individually addressed to at least one of said printable semiconductor elements.

32. The method of claim 22 wherein said printable semiconductor element is electronic devices or components of electronic devices.

33. The method of claim 22 wherein said printable semiconductor elements are one or more electronic device selected from the group consisting of:

an LED, a laser, a solar cell, a sensor, a diode, a transistor, a p-n junction, an integrated circuit, and a photodiode.

34. The method of claim 22 wherein said printable semiconductor element comprises said semiconductor structure integrated with at least one additional structure selected from the group consisting of:

another semiconductor structure;

a dielectric structure;

conductive structure, and an optical structure.

35. The method of claim 22 wherein said printable semiconductor element comprises said semiconductor structure integrated with at least one electronic device component selected from the group consisting of:

an electrode, a dielectric layer, an optical coating, a metal contact pad and a semiconductor channel.

36. The method of claim 22 wherein each of said printable semiconductor element has a thickness selected from the range of 100 nanometers to 100 microns.

37. The method of claim 22 wherein said printable semiconductor element is assembled on said receiving surface via dry transfer contact printing.

38. The method of claim 22 wherein said printable semiconductor element is assembled on said receiving surface using an elastomeric transfer device.

39. The method of claim 22 wherein said printable semiconductor element is assembled on said receiving surface using an elastomeric stamp.

40. The method of claim 22 further comprising the step of providing an adhesive layer or planarizing layer to said receiving surface of said optical component.

41. The method of claim 22 wherein said printable semiconductor element is assembled on said receiving surface using a conformable transfer device.

42. The method of claim 41 wherein said assembling step comprises:

providing said conformable transfer device having a contact surface;

establishing conformal contact between an external surface of said printable semiconductor element and said contact surface of said conformable transfer device, wherein said conformal contact bonds said printable semiconductor element to said contact surface;

contacting said printable semiconductor element bonded to said contact surface and said receiving surface of said optical component; and

separating said printable semiconductor element and said contact surface of said conformable transfer device, thereby assembling said printable semiconductor element on said receiving surface of said optical component.

43. A method of making a semiconductor-based optical system, said method comprising the steps of:

providing a device substrate having a receiving surface;

assembling a printable semiconductor element on said receiving surface of said substrate via contact printing;

providing a planarizing layer on said receiving surface of said substrate; and

planarizing said printable semiconductor element assembled on said receiving surface, thereby making said semiconductor-based optical system, wherein said planarizing step comprises embedding said printable semiconductor element in said planarizing layer provided on said receiving surface of said device substrate and said planarizing layer is provided to said receiving surface after said step of assembling said printable semiconductor element on said receiving surface.

44. A method of making a semiconductor-based optical system, said method comprising the steps of:

providing a device substrate having a receiving surface;

assembling a printable semiconductor element on said receiving surface of said substrate via contact printing;

providing a planarizing layer on said receiving surface of said substrate; and

planarizing said printable semiconductor element assembled on said receiving surface, thereby making said semiconductor-based optical system, wherein said planarizing step comprises embedding said printable semiconductor element in said planarizing layer provided on said receiving surface of said device substrate and said planarizing layer has a thickness selected from the range of 10 nanometers to 1000 microns.

45. A method of making a semiconductor-based optical system, said method comprising the steps of:

providing a device substrate having a receiving surface;

assembling a printable semiconductor element on said receiving surface of said substrate via contact printing; and

providing a planarizing layer on said receiving surface of said substrate; and

planarizing said printable semiconductor element assembled on said receiving surface, thereby making said semiconductor-based optical system wherein said planarizing step comprises embedding said printable semiconductor element in said planarizing layer provided on said receiving surface of said device substrate and said planarizing layer comprises a prepolymer of a polymer.

46. A method of making a semiconductor-based optical system, said method comprising the steps of:

providing a device substrate having a receiving surface;

assembling a printable semiconductor element on said receiving surface of said substrate via contact printing; and

providing a planarizing layer on said receiving surface of said substrate;

planarizing said printable semiconductor element assembled on said receiving surface, thereby making said semiconductor-based optical system wherein said planarizing step comprises embedding said printable semiconductor element in said planarizing layer provided on said receiving surface of said device substrate; and

curing, polymerizing or cross linking said planarizing layer having said printable semiconductor element embedded therein, thereby fixing said printable semiconductor element in said planarizing layer.

47. A method of making a semiconductor-based optical system, said method comprising the steps of:

providing an optical component having a receiving surface; and

assembling a printable semiconductor element on said receiving surface of said optical component via contact printing;

wherein said printable semiconductor elements comprises a semiconductor structure having a length selected from the range of 0.0001 millimeters to 1000 millimeters, a width selected from the range of 0.0001 millimeters to 1000 millimeters and a thickness selected from the range of 0.00001 millimeters to 3 millimeters;

wherein said optical component is an array of light collecting optical components, light concentrating optical components, light diffusing optical components, dispersing optical components or light filtering optical components;

and each of said components in said array is individually addressed to at least one of said printable semiconductor elements.

48. A method of making a semiconductor-based optical system, said method comprising the steps of:

providing an optical component having a receiving surface; and

assembling a printable semiconductor element on said receiving surface of said optical component via contact printing;

wherein said printable semiconductor elements comprises a semiconductor structure having a length selected from the range of 0.0001 millimeters to 1000 millimeters, a width selected from the range of 0.0001 millimeters to 1000 millimeters and a thickness selected from the range of 0.00001 millimeters to 3 millimeters;

wherein said printable semiconductor element is assembled on said receiving surface using a conformable transfer device and said assembling step comprises;

providing said conformable transfer device having a contact surface;

establishing conformal contact between an external surface of said printable semiconductor element and said contact surface of said conformable transfer device, wherein said conformal contact bonds said printable semiconductor element to said contact surface;

contacting said printable semiconductor element bonded to said contact surface and said receiving surface of said optical component; and

separating said printable semiconductor element and said contact surface of said conformable transfer device, thereby assembling said printable semiconductor element on said receiving surface of said optical component.

49. A semiconductor-based optical system comprising:

a device substrate having a receiving surface;

a planarizing layer supported by said receiving surface; and

a planarized printable semiconductor element supported by said receiving surface and embedded in said planarizing layer, wherein said printable semiconductor element has an exposed surface with a step edge that is less than or equal to 2 μ

m;

wherein said device substrate having said printable semiconductor element has said substantially planar top surface that includes said printable semiconductor element, wherein said planarized printable semiconductor element comprises a semiconductor structure having a length selected from the range of 0.0001 millimeters to 1000 millimeters, a width selected from the range of 0.0001 millimeters to 1000 millimeters and a thickness selected from the range of 0.00001 millimeters to 3 millimeters.