Purge step-controlled sequence of processing semiconductor wafers

• US 7,972,961 B2
• Filed: 10/09/2008
• Issued: 07/05/2011
• Est. Priority Date: 10/09/2008
• Status: Active Grant

• Current Assignee: ASM Japan K.K. (ASM International NV)
• Original Assignee: ASM Japan K.K. (ASM International NV)
• Inventors: Sugiyama, Toru, Nakano, Ryu
• Primary Examiner(s): Garber; Charles D
• Assistant Examiner(s): SENE, PAPE A
• Application Number:
  US12/248,741
• Publication Number:
  US 20100093181A1
• Time in Patent Office: 999 Days
• Field of Search: 438/680, 438/492
• US Class Current: 438/680
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: H01J 37/32743 for introducing the material into processing chamber

Abstract

A method of processing semiconductor substrates includes: depositing a film on a substrate in a reaction chamber; evacuating the reaction chamber without purging the reaction chamber; opening a gate valve and replacing the substrate with a next substrate via the transfer chamber wherein the pressure of the transfer chamber is controlled to be higher than that of the reaction chamber before and while the gate valve is opened; repeating the above steps and removing the substrate from the reaction chamber; and purging and evacuating the reaction chamber, and cleaning the reaction chamber with a cleaning gas.

Claims

1. A method of processing semiconductor substrates in an apparatus comprising a reaction chamber and a transfer chamber connected to and communicated with the reaction chamber via a gate valve, said reaction chamber and said transfer chamber being evacuatable, said method comprising:

(i) depositing a film on a substrate in the reaction chamber;

(ii) evacuating the reaction chamber without purging the reaction chamber between steps (i) and (iii);

(iii) opening the gate valve and replacing the substrate with a next substrate via the transfer chamber, wherein the pressure of the transfer chamber is controlled to be higher than that of the reaction chamber before and while the gate valve is opened by introducing an inert gas into the transfer chamber while evacuating the transfer chamber and the reaction chamber independently, wherein while the gate valve is open, the inert gas flows from the transfer chamber into the reaction chamber and a flow rate of the inert gas into the transfer chamber is increased, relative to that before the gate valve is opened for replacing the substrate with the next substrate, to 5,000 to 10,000 sccm;

(iv) repeating steps (i) and (ii) for the next substrate and removing the next substrate from the reaction chamber; and

(v) after removing the last substrate from the reaction chamber, purging and evacuating the reaction chamber, and cleaning the reaction chamber with a cleaning gas, wherein the purging is conducted by introducing an inert gas into the reaction chamber at a greater flow rate than that used when the last substrate is present in the reaction chamber.

2. The method according to claim 1, wherein the gate valve is heated to a degree exceeding heat passively received from the reaction chamber at least throughout steps (i) to (iv).

3. The method according to claim 2, wherein the gate valve is heated to about 120°

C. or higher.

4. The method according to claim 1, wherein in step (iii), the pressure of the transfer chamber is controlled before the gate valve is opened by introducing an inert gas into the transfer chamber.

5. The method according to claim 1, wherein the inert gas is introduced to the transfer chamber at 2,000 to 4,000 sccm before the gate valve is opened, and at 7,000 to 8,000 sccm while the gate valve is opened.

6. The method according to claim 1, wherein in step (v), the purging is conducted by introducing an inert gas into the reaction chamber at more than 8,000 sccm.

7. The method according to claim 1, wherein the steps (i) to (iii) are repeated at least once before step (iv).

8. The method according to claim 1, wherein steps (i) to (v) are repeated until at least 3,000 substrates are processed without ex-situ cleaning.