VLSI fabrication processes for introducing pores into dielectric materials

• US 7,972,976 B1
• Filed: 10/27/2009
• Issued: 07/05/2011
• Est. Priority Date: 01/31/2005
• Status: Active Grant

• Current Assignee: Novellus Systems Incorporated (LAM Research Corporation)
• Original Assignee: Novellus Systems Incorporated (LAM Research Corporation)
• Inventors: Humayun, Raashina, Hill, Richard S., Sun, Jianing, Draeger, Nerissa S., Ray, Gary William, van den Hoek, Willibrordus Gerardus Maria
• Primary Examiner(s): Le; Thao P.
• Application Number:
  US12/606,920
• Time in Patent Office: 616 Days
• Field of Search: 257/E31.013, 257/E21.649, 257/E23.145
• US Class Current: 438/781
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02203 the layer being porous
• CPC Class Codes: H01L 21/0234 treatment by exposure to a plasma
• CPC Class Codes: H01L 21/02343 treatment by exposure to a liquid
• CPC Class Codes: H01L 21/02348 treatment by exposure to UV light
• CPC Class Codes: H01L 21/02351 treatment by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions
• CPC Class Codes: H01L 21/02362 formation of intermediate layers, e.g. capping layers or diffusion barriers
• CPC Class Codes: H01L 21/31695 Deposition of porous oxides or porous glassy oxides or oxide based porous glass
• CPC Class Codes: H01L 21/76807 for dual damascene structures
• CPC Class Codes: H01L 21/7682 the dielectric comprising air gaps
• CPC Class Codes: H01L 2221/1047 the air gaps being formed by pores in the dielectric
• CPC Class Codes: Y10S 438/96 Porous semiconductor

Abstract

Porous dielectric layers are produced by introducing pores in pre-formed composite dielectric layers. The pores may be produced after the barrier material, the metal or other conductive material is deposited to form a metallization layer. In this manner, the conductive material is provided with a relatively smooth continuous surface on which to deposit.

Claims

1. A method of forming a layer comprising conductive lines on a substrate, the method comprising:

(a) providing a layer of composite dielectric material on the substrate, wherein the composite dielectric material comprises a dielectric network and a porogen, and wherein the dielectric network comprises carbon-carbon unsaturated bonds, wherein the dielectric network is formed using a precursor selected from the group consisting of ethynyltrimethylsilane (ETMS), propargyltrimethylsilane (PTMS), propargyloxytrimethylsilane (POTMS), bis(trimethylsilyl)acetylene (BTMSA), 1,3-diethynyltetramethyldisiloxane (DTDS), dimethylmethoxysilaneacetylene (DMMOSA), methyldimethoxysilaneacetylene (MDMOSA), dimethylethoxysilaneacetylene (DMESA), methyldiethoxysilaneacetylene (MDEOSA), dimethylsilane-diacetylene (DMSDA) and methylsilane-triacetylene (MSTA);

(b) patterning the layer of composite dielectric material to define paths for the conductive lines;

(c) filling the paths with conductive material;

(d) after filling the paths in (c), removing at least some of the porogen from the layer of composite dielectric material to produce a porous dielectric network.

2. The method of claim 1, wherein the dielectric network comprises carbon-carbon triple bonds.

3. The method of claim 1, wherein the dielectric network comprises carbon-carbon double bonds.

4. The method of claim 1, wherein removing at least some of the porogen from the layer of composite dielectric material to produce a porous dielectric network is performed by plasma treatment.

5. The method of claim 1, wherein (a) comprises co-depositing the porogen and the dielectric network by PECVD.

6. The method of claim 1, wherein removing at least some of the porogen from the layer of composite dielectric material comprises exposing the composite dielectric material to ultraviolet radiation.

7. The method of claim 1, wherein removing at least some of the porogen from the layer of composite dielectric material comprises exposing the composite dielectric material to at least one of the following:

a supercritical solvent, a thermal treatment, and e-beam radiation.

8. The method of claim 1, further comprising removing excess conductive material formed in (c) prior to removing the porogen in (d), to thereby form an exposed pattern of conductive lines in the composite dielectric material.

9. The method of claim 8, wherein removing the excess conductive material also serves to produce a planarized surface.

10. The method of claim 1, wherein the dielectric network comprises carbon-doped silicon oxide.

11. The method of claim 1, wherein the conductive material is copper.

12. The method of claim 1, wherein filling the paths with a conductive material comprises plating the conductive material.

13. The method of claim 1, wherein (d) comprises removing at least some of the porogen from the layer of composite dielectric material to produce a porous dielectric network by exposing the layer of composite dielectric material to a modulated UV radiation, wherein the UV intensity varies in a periodic fashion.

14. The method of claim 1, wherein (a) comprises co-depositing the porogen and the dielectric network by dual frequency plasma enhanced chemical vapor deposition process.

15. The method of claim 1, wherein the substrate is a partially fabricated integrated circuit.