ALD of metal silicate films
First Claim
1. An atomic layer deposition (ALD) method for forming a metal silicate film, the method comprising a plurality of cycles, each cycle comprising contacting a substrate in a reaction space with spatially and temporally separated vapor phase pulses of a silicon halide source chemical, a metal source chemical, and an oxidizing agent, wherein the metal source chemical is the next reactant provided after the silicon halide source chemical, wherein the metal silicate film has a silicon content greater than about 65 atomic %.
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Abstract
Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a silicon source chemical, metal source chemical, and an oxidizing agent, wherein the metal source chemical is the next reactant provided after the silicon source chemical. Methods according to some embodiments can be used to form silicon-rich hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surface.
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Citations
15 Claims
- 1. An atomic layer deposition (ALD) method for forming a metal silicate film, the method comprising a plurality of cycles, each cycle comprising contacting a substrate in a reaction space with spatially and temporally separated vapor phase pulses of a silicon halide source chemical, a metal source chemical, and an oxidizing agent, wherein the metal source chemical is the next reactant provided after the silicon halide source chemical, wherein the metal silicate film has a silicon content greater than about 65 atomic %.
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12. An atomic layer deposition (ALD) method for forming a hafnium silicate film on a substrate in a reaction space, comprising the sequential steps of:
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(a) contacting the substrate with a vapor phase pulse of an oxidizing agent; (b) removing excess oxidizing agent and reaction by-products, if any, from the reaction space; (c) contacting the substrate with a vapor phase pulse of a silicon halide; (d) removing excess silicon halide and reaction by-products, if any, from the reaction space; (e) contacting the substrate with a vapor phase pulse of a metal halide; (f) removing excess metal halide and reaction by-products, if any, from the reaction space; and (g) repeating steps (a) through (f) until a metal silicate film of a desired thickness is formed on the substrate, wherein no reactant is provided between steps (c) and (e), and wherein the metal silicate film has a silicon content greater than about 65 atomic %. - View Dependent Claims (13, 14, 15)
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Specification