Method of forming conformal dielectric film having Si-N bonds by PECVD
First Claim
Patent Images
1. A method of forming a conformal dielectric film having Si—
- N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD), which comprises;
introducing a nitrogen- and/or hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed;
applying RF power to the reaction space; and
introducing a hydrogen-containing silicon gas as a first precursor and a hydrocarbon gas as a second precursor separately, each precursor being introduced in pulses of less than 5-second duration into the reaction space while introducing the reactive gas and the rare gas and exciting a plasma without interruption, thereby forming a conformal dielectric film having Si—
N bonds on the substrate.
1 Assignment
0 Petitions
Accused Products
Abstract
A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor as a first precursor and a hydrocarbon gas as a second precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film doped with carbon and having Si—N bonds on the substrate.
433 Citations
20 Claims
-
1. A method of forming a conformal dielectric film having Si—
- N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD), which comprises;
introducing a nitrogen- and/or hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon gas as a first precursor and a hydrocarbon gas as a second precursor separately, each precursor being introduced in pulses of less than 5-second duration into the reaction space while introducing the reactive gas and the rare gas and exciting a plasma without interruption, thereby forming a conformal dielectric film having Si—
N bonds on the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
- N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD), which comprises;
-
16. A method of forming a conformal dielectric film having Si—
- N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD), which comprises;
introducing a nitrogen- and/or hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon gas as a first precursor and a hydrocarbon gas as a second precursor separately, each precursor being introduced in pulses of less than 5-second duration into the reaction space while introducing the reactive gas and the rare gas and exciting a plasma without interruption, thereby forming a conformal dielectric film having Si—
N bonds on the substrate; andafter forming the conformal dielectric film as a first conformal dielectric film, increasing the pulse duration of the second precursor per cycle without changing the length of one cycle which is the same as that for the first precursor, or performing multiple cycles of the second precursor per one cycle of the first precursor, thereby forming a second conformal dielectric film which has a carbon concentration higher than that of the first conformal dielectric film.
- N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD), which comprises;
-
17. A method of forming dielectric films having Si—
- N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD), which comprises;
(i) introducing a nitrogen- and/or hydrogen-containing reactive gas and an rare gas into a reaction space inside which the semiconductor substrate is placed; (ii) applying RF power to the reaction space; (iii) introducing as a first precursor a hydrogen-containing silicon gas in pulses of less than a 5-second duration into the reaction space while introducing the reactive gas and the inert gas and exciting a plasma without interruption, thereby forming a first dielectric film having Si—
N bonds on the substrate; and(iv) forming a second dielectric film having Si—
N bonds on the substrate by repeating steps (i) to (iii), wherein step (iii) further comprises introducing a second precursor in pulses while introducing the first precursor in pulses at the same timing, thereby increasing wet etching resistance of the second dielectric film as compared with that of the first dielectric film, said second precursor being a hydrocarbon gas containing no silicon. - View Dependent Claims (18, 19, 20)
- N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD), which comprises;
Specification