Semiconductor device and method of fabricating the same
First Claim
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1. A display device comprising:
- a thin film transistor, the thin film transistor comprising;
a gate electrode formed over a substrate;
an insulating film formed over the gate electrode;
a semiconductor film formed over the insulating film;
source and drain regions formed over the semiconductor film;
a source electrode over the source region; and
a drain electrode formed over the drain region;
a pixel electrode comprising a transparent conductive material, formed over the substrate, and connected to the drain electrode;
a source wiring being continuous to the source electrode, formed over the insulating film;
a gate wiring being continuous to the gate electrode, formed over the substrate;
a passivation film formed over the source electrode and the drain electrode, the passivation film being in contact with a portion of the semiconductor film between the source electrode and the drain electrode; and
a capacitor, the capacitor comprising;
a capacitor wiring formed over the substrate, wherein the capacitor wiring comprises a same material as the gate electrode;
the insulating film formed over the capacitor wiring; and
the pixel electrode formed over the capacitor wiring with the insulating film interposed therebetween,wherein the capacitor wiring extends substantially in parallel with the gate wiring at least in a pixel portion,wherein the capacitor wiring is electrically connected to a terminal portion, andwherein the terminal portion is formed in an edge portion of the substrate.
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Abstract
A display device includes a main body, a support stand, and a display portion. The display portion includes a pixel having a TFT and a capacitor. The capacitor includes a capacitor electrode on an insulating surface, an insulating film on the capacitor electrode, and a pixel electrode of the TFT on the insulating film.
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Citations
48 Claims
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1. A display device comprising:
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a thin film transistor, the thin film transistor comprising; a gate electrode formed over a substrate; an insulating film formed over the gate electrode; a semiconductor film formed over the insulating film; source and drain regions formed over the semiconductor film; a source electrode over the source region; and a drain electrode formed over the drain region; a pixel electrode comprising a transparent conductive material, formed over the substrate, and connected to the drain electrode; a source wiring being continuous to the source electrode, formed over the insulating film; a gate wiring being continuous to the gate electrode, formed over the substrate; a passivation film formed over the source electrode and the drain electrode, the passivation film being in contact with a portion of the semiconductor film between the source electrode and the drain electrode; and a capacitor, the capacitor comprising; a capacitor wiring formed over the substrate, wherein the capacitor wiring comprises a same material as the gate electrode; the insulating film formed over the capacitor wiring; and the pixel electrode formed over the capacitor wiring with the insulating film interposed therebetween, wherein the capacitor wiring extends substantially in parallel with the gate wiring at least in a pixel portion, wherein the capacitor wiring is electrically connected to a terminal portion, and wherein the terminal portion is formed in an edge portion of the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A display device comprising:
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a thin film transistor, the thin film transistor comprising; a gate electrode formed over a substrate; an insulating film formed over the gate electrode; a first semiconductor film formed over the insulating film; source and drain regions formed over the first semiconductor film; a source electrode over the source region; and a drain electrode formed over the drain region; a pixel electrode comprising a transparent conductive material, formed over the substrate, and connected to the drain electrode; a source wiring being continuous to the source electrode, formed over the insulating film and second and third semiconductor films, wherein the third semiconductor film is formed over the second semiconductor film; wherein the second semiconductor film is continuous to the first semiconductor film, and comprises the same material as the first semiconductor film, and wherein the third semiconductor film is continuous to the source region, and comprises the same material as the source region, a gate wiring being continuous to the gate electrode, formed over the substrate; a passivation film formed over the source electrode and the drain electrode, the passivation film being in contact with a portion of the first semiconductor film between the source electrode and the drain electrode; and a capacitor, the capacitor comprising; a capacitor wiring formed over the substrate, wherein the capacitor wiring comprises a same material as the gate electrode; the insulating film formed over the capacitor wiring; and the pixel electrode formed over the capacitor wiring with the insulating film interposed therebetween, wherein the capacitor wiring extends substantially in parallel with the gate wiring at least in a pixel portion, wherein the capacitor wiring is electrically connected to a terminal portion, and wherein the terminal portion is formed in an edge portion of the substrate. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A display device comprising:
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a thin film transistor, the thin film transistor comprising; a gate electrode formed over a substrate; an insulating film formed over the gate electrode; a semiconductor film formed over the insulating film; source and drain regions formed over the semiconductor film; a source electrode over the source region; and a drain electrode formed over the drain region; a pixel electrode comprising a transparent conductive material, formed over the substrate, and connected to the drain electrode; a source wiring being continuous to the source electrode, formed over the insulating film; a gate wiring being continuous to the gate electrode, formed over the substrate; a passivation film formed over the source electrode and the drain electrode, the passivation film being in contact with a portion of the semiconductor film between the source electrode and the drain electrode; an alignment film formed over the passivation film; and a capacitor, the capacitor comprising; a capacitor wiring formed over the substrate, wherein the capacitor wiring comprises a same material as the gate electrode; the insulating film formed over the capacitor wiring; and the pixel electrode formed over the capacitor wiring with the insulating film interposed therebetween, wherein the capacitor wiring extends substantially in parallel with the gate wiring at least in a pixel portion, wherein the capacitor wiring is electrically connected to a terminal portion, and wherein the terminal portion is formed in an edge portion of the substrate. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36)
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37. A display device comprising:
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a thin film transistor, the thin film transistor comprising; a gate electrode formed over a substrate; an insulating film formed over the gate electrode; a first semiconductor film formed over the insulating film; source and drain regions formed over the first semiconductor film; a source electrode over the source region; and a drain electrode formed over the drain region; a pixel electrode comprising a transparent conductive material, formed over the substrate, and connected to the drain electrode; a source wiring being continuous to the source electrode, formed over the insulating film and second and third semiconductor films, wherein the third semiconductor film is formed over the second semiconductor film; wherein the second semiconductor film is continuous to the first semiconductor film, and comprises the same material as the first semiconductor film, and wherein the third semiconductor film is continuous to the source region, and comprises the same material as the source region, a gate wiring being continuous to the gate electrode, formed over the substrate; a passivation film formed over the source electrode and the drain electrode, the passivation film being in contact with a portion of the first semiconductor film between the source electrode and the drain electrode; an alignment film formed over the passivation film; and a capacitor, the capacitor comprising; a capacitor wiring formed over the substrate, wherein the capacitor wiring comprises a same material as the gate electrode; the insulating film formed over the capacitor wiring; and the pixel electrode formed over the capacitor wiring with the insulating film interposed therebetween, wherein the capacitor wiring extends substantially in parallel with the gate wiring at least in a pixel portion, wherein the capacitor wiring is electrically connected to a terminal portion, and wherein the terminal portion is formed in an edge portion of the substrate. - View Dependent Claims (38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48)
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Specification