Microfeature workpieces having conductive interconnect structures formed by chemically reactive processes, and associated systems and methods

• US 7,973,411 B2
• Filed: 11/23/2009
• Issued: 07/05/2011
• Est. Priority Date: 08/28/2006
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Borthakur, Swarnal
• Primary Examiner(s): HOANG, QUOC DINH
• Application Number:
  US12/624,215
• Publication Number:
  US 20100065970A1
• Time in Patent Office: 589 Days
• Field of Search: 257/762, 257/774, 257/775, 257/E23.141, 257/E23.151, 257/E23.154
• US Class Current: 257/762
• CPC Class Codes: H01L 21/76846 Layer combinations
• CPC Class Codes: H01L 21/76856 by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
• CPC Class Codes: H01L 21/76868 Forming or treating discontinuous thin films, e.g. repair, enhancement or reinforcement of discontinuous thin films
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2224/02126 Collar structures
• CPC Class Codes: H01L 2224/05001 Internal layers
• CPC Class Codes: H01L 2224/05009 Bonding area integrally formed with a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05025 the internal layer being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05181 Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/05184 Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/0557 the external layer being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13025 the bump connector being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2225/06513 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06517 Bump or bump-like direct electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06541 Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
• CPC Class Codes: H01L 24/03 Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/14 : of a plurality of bump connectors
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/14 : Integrated circuits

Abstract

Microfeature workpieces having conductive vias formed by chemically reactive processes, and associated systems and methods are disclosed. A method in accordance with one embodiment includes disposing a conductive lining on walls of a via in a microfeature workpiece, so that a space is located between opposing portions of the lining facing toward each other from opposing portions of the wall. The method can further include chemically reacting the lining with a reactive material to form a chemical compound from a constituent of the reactive material and a constituent of the lining. The method can still further include at least partially filling the space with the compound. In particular embodiments, the conductive lining includes copper, the reactive material includes sulfur hexafluoride, and the chemical compound that at least partially fills the space in the via includes copper sulfide.

Claims

1. A microfeature workpiece;

comprising;

a microfeature substrate material having a via with opposing via wall portions;

a first conductive material disposed in a layer adjacent to the opposing wall portions; and

a second conductive material disposed adjacent to the first conductive material, the second conductive material entirely filling a cross-sectional dimension and a length of the via between opposing portions of the layer over at least part of a length of the via, the second conductive material including a chemical compound that in turn includes a constituent of the layer.

2. The microfeature workpiece of claim 1 wherein a concentration of the constituent varies across the cross-sectional dimension of the via.

3. The microfeature workpiece of claim 1 wherein the first conductive material includes copper.

4. The microfeature workpiece of claim 1 wherein the second conductive material includes copper sulfide.

5. The microfeature workpiece of claim 1 wherein neither of the conductive materials includes either tin or silver.

6. The microfeature workpiece of claim 1 wherein neither of the conductive materials includes solder.

7. The microfeature workpiece of claim 1 wherein each of the first and second conductive materials has a melting point higher than that of solder.

8. A microfeature workpiece, comprising:

a microfeature substrate material having a via with opposing via wall portions;

a copper lining on the opposing via wall portions of the via, the copper lining bordering a space located between portions of the copper lining on opposing via wall portions of the via, the space having a cross-sectional dimension and a length generally transverse to the cross-sectional dimension; and

a volume of copper sulfide disposed in the via between the opposing wall portions, the volume of copper sulfide substantially filling the cross-sectional dimension of the space over generally the entire length of the space in the via.

9. The microfeature workpiece of claim 8 wherein the copper sulfide includes a concentration of copper that varies across a cross-sectional dimension of the via.

10. The microfeature workpiece of claim 8 wherein the volume of copper sulfide is generally void-free.

11. The microfeature workpiece of claim 8, further comprising a bond pad carried by the substrate material and electrically coupled to the copper sulfide.

12. An interconnect structure for a microfeature workpiece having a via with a sidewall, comprising:

a first conductive material on the sidewall of the via, wherein the first conductive material includes an elemental conductive constituent and borders a space between opposing portions of the sidewall facing toward each other, the space having a cross-sectional dimension and a length generally transverse to the cross-sectional dimension; and

a second conductive material adjacent to the first conductive material, the second conductive material including a chemical compound that includes the elemental conductive constituent, wherein the second conductive material substantially fills the space in the via over generally the entire length of the space in the via.

13. The interconnect structure of claim 12 wherein the first conductive material includes copper and the second conductive material includes copper sulfide.

14. The interconnect structure of claim 12, further comprising a barrier material disposed in the via of the microfeature workpiece and a seed material adjacent to the barrier material, and wherein the first conductive material is positioned adjacent to the seed material.

15. The interconnect structure of claim 12 wherein a concentration of the conductive constituent decreases in the second conductive material in a direction away from the first conductive material.