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Time resolved radiation assisted device alteration

  • US 7,973,545 B2
  • Filed: 04/22/2008
  • Issued: 07/05/2011
  • Est. Priority Date: 04/22/2008
  • Status: Expired due to Fees
First Claim
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1. A method of time resolved radiation assisted device alteration testing of a semiconductor circuit, comprising:

  • performing spatially resolved radiation assisted circuit testing on the semiconductor circuit while applying a test pattern comprising a plurality of test vectors to determine a pass-fail modulation location on the semiconductor circuit;

    asynchronously scanning the semiconductor circuit with radiation while repeatedly applying the test pattern and providing pass-fail results;

    combining corresponding pass-fail results provided during said asynchronously scanning the semiconductor circuit to determine a shifted pass-fail modulation indication;

    determining time shift information between the pass-fail modulation location and the shifted pass-fail modulation indication; and

    identifying at least one of said plurality of test vectors based on the time shift information.

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