Apparatus for sensing an output current in a communications device
First Claim
1. An apparatus for sensing current, comprising:
- a main transistor configured to have a first drain to source voltage applied between its respective drain and its respective source and a first gate to source voltage applied between its respective gate and its respective source;
a sense transistor configured to have a second drain to source voltage applied between its respective drain and its respective source and a second gate to source voltage applied between its respective gate and its respective source,a first comparator configured to cause the second drain to source voltage to be a replica of the first drain to source voltage; and
a second comparator configured to cause the second gate to source voltage to be a replica of the first gate to source voltage.
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Abstract
Power over Ethernet (PoE) communication systems provide power and data communications over the same communications link, where a power source device (PSE) provides DC power (for example, 48 volts DC) to a powered device (PD). The DC power is transmitted simultaneously over the same communications medium with the high speed data from one node to the other node. The PSE typically includes a controller that controls the DC power provided to the PD at the second node of the communications link. The PSE controller measures the voltage, current, and temperature of the outgoing and incoming DC supply lines to characterize the power requirements of the PD. The PSE controller includes a resistorless switch to measure the current. The resistorless switch includes a sense transistor and a current mirror to allowing the PSE controller to calculate the current based upon a replica current.
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Citations
20 Claims
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1. An apparatus for sensing current, comprising:
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a main transistor configured to have a first drain to source voltage applied between its respective drain and its respective source and a first gate to source voltage applied between its respective gate and its respective source; a sense transistor configured to have a second drain to source voltage applied between its respective drain and its respective source and a second gate to source voltage applied between its respective gate and its respective source, a first comparator configured to cause the second drain to source voltage to be a replica of the first drain to source voltage; and a second comparator configured to cause the second gate to source voltage to be a replica of the first gate to source voltage. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. An apparatus for sensing current, comprising:
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a main transistor configured to provide a first current from its respective source to its respective drain in response to a first drain to source bias and a first gate to source bias; a sense transistor configured to provide a second current from its respective source to its respective drain in response to a second drain to source bias and a second gate to source bias; a first comparator configured to cause the second drain to source bias to be a replica of the first drain to source bias; and a second comparator configured to cause the second gate to source bias to be a replica of the first gate to source bias. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification