Hybrid laser diode for single mode operation and method of fabricating the same
First Claim
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1. A hybrid laser diode comprising,a silicon layer configured to be a first waveguide;
- a compound semiconductor active pattern formed over the silicon layer and configured to be a second waveguide; and
a bonding layer formed between the silicon layer and the compound semiconductor active pattern,wherein the bonding layer includes diffraction patterns constituting a Bragg grating,wherein the hybrid laser diode employs a distributed feedback laser (DFB laser),wherein the diffraction patterns of the bonding layer includes openings configured to satisfy Bragg'"'"'s condition corresponding to a wavelength of light generated by the hybrid laser diode,wherein the openings has a lower refractive index than the bonding layer, andwherein the bonding layer has a lower refractive index than the silicon layer and the compound semiconductor active pattern.
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Abstract
Provided are a hybrid laser diode for single mode operation, and a method for manufacturing the hybrid laser diode. The hybrid laser diode includes a silicon layer, an active pattern disposed on the silicon layer, and a bonding layer disposed between the silicon layer and the active pattern. Here, the bonding layer includes diffraction patterns constituting a Bragg grating.
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Citations
11 Claims
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1. A hybrid laser diode comprising,
a silicon layer configured to be a first waveguide; -
a compound semiconductor active pattern formed over the silicon layer and configured to be a second waveguide; and a bonding layer formed between the silicon layer and the compound semiconductor active pattern, wherein the bonding layer includes diffraction patterns constituting a Bragg grating, wherein the hybrid laser diode employs a distributed feedback laser (DFB laser), wherein the diffraction patterns of the bonding layer includes openings configured to satisfy Bragg'"'"'s condition corresponding to a wavelength of light generated by the hybrid laser diode, wherein the openings has a lower refractive index than the bonding layer, and wherein the bonding layer has a lower refractive index than the silicon layer and the compound semiconductor active pattern. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A hybrid laser diode comprising:
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a silicon layer; a compound semiconductor pattern formed over the silicon layer; and a resonator assembly formed between the silicon layer and the compound semiconductor pattern, wherein the resonator assembly has lower refractive indices than the silicon layer and the compound semiconductor pattern, wherein the hybrid laser diode employs a distributed feedback laser (DFB laser), wherein the resonator assembly includes a bonding layer interposed between the silicon layer and the compound semiconductor pattern, wherein the bonding layer includes a plurality of openings, wherein the bonding layer has a lower refractive index than the silicon layer and the compound semiconductor pattern, and wherein the openings have a lower refractive index than the bonding layer. - View Dependent Claims (9, 10)
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11. A hybrid laser diode comprising,
a silicon layer configured to be a first waveguide; -
a compound semiconductor pattern formed over the silicon layer and configured to be a second waveguide; and a bonding layer formed between the silicon layer and the compound semiconductor pattern, wherein the hybrid laser diode employs a distributed feedback laser (DFB laser) wherein the bonding layer includes openings configured to satisfy Bragg'"'"'s condition, wherein the bonding layer has a lower refractive index than the silicon layer and the compound semiconductor pattern, and wherein the openings have a lower refractive index than the bonding layer.
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Specification