Hybrid laser diode for single mode operation and method of fabricating the same

• US 7,974,326 B2
• Filed: 05/09/2008
• Issued: 07/05/2011
• Est. Priority Date: 12/12/2007
• Status: Expired due to Fees

• Current Assignee: Electronics and Telecommunications Research Institute
• Original Assignee: Electronics and Telecommunications Research Institute
• Inventors: Kim, Ki-Soo, Kim, Gyung-Ock, Kwon, O-Kyun, Song, Jung-Ho, Leem, Young-Ahn
• Primary Examiner(s): Harvey; Minsun
• Assistant Examiner(s): NIU, XINNING
• Application Number:
  US12/118,551
• Publication Number:
  US 20090154517A1
• Time in Patent Office: 1,152 Days
• Field of Search: 372/50.11
• US Class Current: 372/50.11
• CPC Class Codes: H01S 5/0215 Bonding to the substrate
• CPC Class Codes: H01S 5/026 Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers stabilisation of output H01S5/06
• CPC Class Codes: H01S 5/1014 Tapered waveguide, e.g. spotsize converter H01S5/1064 takes precedence
• CPC Class Codes: H01S 5/1032 Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
• CPC Class Codes: H01S 5/12 the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers comprising a photonic bandgap structure H01S5/11; surface-emitting lasers H01S5/18
• CPC Class Codes: H01S 5/32333 based on InGaAsP

Abstract

Provided are a hybrid laser diode for single mode operation, and a method for manufacturing the hybrid laser diode. The hybrid laser diode includes a silicon layer, an active pattern disposed on the silicon layer, and a bonding layer disposed between the silicon layer and the active pattern. Here, the bonding layer includes diffraction patterns constituting a Bragg grating.

Claims

1. A hybrid laser diode comprising,

a silicon layer configured to be a first waveguide;

a compound semiconductor active pattern formed over the silicon layer and configured to be a second waveguide; and

a bonding layer formed between the silicon layer and the compound semiconductor active pattern,

wherein the bonding layer includes diffraction patterns constituting a Bragg grating,

wherein the hybrid laser diode employs a distributed feedback laser (DFB laser),

wherein the diffraction patterns of the bonding layer includes openings configured to satisfy Bragg'"'"'s condition corresponding to a wavelength of light generated by the hybrid laser diode,

wherein the openings has a lower refractive index than the bonding layer, and

wherein the bonding layer has a lower refractive index than the silicon layer and the compound semiconductor active pattern.

2. The hybrid laser diode of claim 1, wherein the bonding layer is a silicon oxide layer.

3. The hybrid laser diode of claim 1, wherein the bonding layer has a thickness ranging from about 10 nm to about 100 nm.

4. The hybrid laser diode of claim 1, wherein the diffraction pattern has a coupling coefficient ranging from about 20 cm⁻

1 to about 100 cm<sup>−

1</sup>, and the coupling coefficient of the diffraction pattern is adjusted by controlling any of a thickness of the bonding layer, a refractive index of the bonding layer, and a width of the bonding layer.

5. The hybrid laser diode of claim 1, wherein the bonding layer is extended from the diffraction pattern to cover the silicon layer around the compound semiconductor active pattern, and a width of the bonding layer having the diffraction pattern is wider or the same as a width of the diffraction pattern.

6. The hybrid laser diode of claim 1, wherein the silicon layer is used as a slab waveguide, and the compound semiconductor active layer is used as a channel waveguide.

7. The hybrid laser diode of claim 1, wherein the silicon layer is used as a channel waveguide, and the active layer is used as a slab waveguide.

8. A hybrid laser diode comprising:

a silicon layer;

a compound semiconductor pattern formed over the silicon layer; and

a resonator assembly formed between the silicon layer and the compound semiconductor pattern,

wherein the resonator assembly has lower refractive indices than the silicon layer and the compound semiconductor pattern,

wherein the hybrid laser diode employs a distributed feedback laser (DFB laser),

wherein the resonator assembly includes a bonding layer interposed between the silicon layer and the compound semiconductor pattern,

wherein the bonding layer includes a plurality of openings,

wherein the bonding layer has a lower refractive index than the silicon layer and the compound semiconductor pattern, and

wherein the openings have a lower refractive index than the bonding layer.

9. The hybrid laser diode of claim 8, wherein the openings configured to satisfy Bragg'"'"'s condition corresponding to a wavelength of light generated by the hybrid laser diode.

10. The hybrid laser diode of claim 8, wherein the openings are filled with a material having a lower refractive index than the bonding layer such that the openings constitute Bragg gratings capable of providing optical feedback.

11. A hybrid laser diode comprising,

a silicon layer configured to be a first waveguide;

a compound semiconductor pattern formed over the silicon layer and configured to be a second waveguide; and

a bonding layer formed between the silicon layer and the compound semiconductor pattern,

wherein the hybrid laser diode employs a distributed feedback laser (DFB laser)

wherein the bonding layer includes openings configured to satisfy Bragg'"'"'s condition,

wherein the bonding layer has a lower refractive index than the silicon layer and the compound semiconductor pattern, and

wherein the openings have a lower refractive index than the bonding layer.