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Hybrid laser diode for single mode operation and method of fabricating the same

  • US 7,974,326 B2
  • Filed: 05/09/2008
  • Issued: 07/05/2011
  • Est. Priority Date: 12/12/2007
  • Status: Expired due to Fees
First Claim
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1. A hybrid laser diode comprising,a silicon layer configured to be a first waveguide;

  • a compound semiconductor active pattern formed over the silicon layer and configured to be a second waveguide; and

    a bonding layer formed between the silicon layer and the compound semiconductor active pattern,wherein the bonding layer includes diffraction patterns constituting a Bragg grating,wherein the hybrid laser diode employs a distributed feedback laser (DFB laser),wherein the diffraction patterns of the bonding layer includes openings configured to satisfy Bragg'"'"'s condition corresponding to a wavelength of light generated by the hybrid laser diode,wherein the openings has a lower refractive index than the bonding layer, andwherein the bonding layer has a lower refractive index than the silicon layer and the compound semiconductor active pattern.

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