Methods of forming integrated circuit packages, and methods of assembling integrated circuit packages

• US 7,977,157 B2
• Filed: 03/01/2010
• Issued: 07/12/2011
• Est. Priority Date: 05/17/2007
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Chye, Lim Thiam, Fee, Setho Sing, Jiang, Tongbi
• Primary Examiner(s): Garber; Charles D
• Assistant Examiner(s): Ahmadi; Mohsen
• Application Number:
  US12/715,293
• Publication Number:
  US 20100151630A1
• Time in Patent Office: 498 Days
• Field of Search: 257/E21.508, 257/E21.509
• US Class Current: 438/106
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05169 Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/05171 Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/05181 Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/05184 Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/05639 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05664 Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/81193 wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81205 Ultrasonic bonding
• CPC Class Codes: H01L 2224/81801 Soldering or alloying
• CPC Class Codes: H01L 2224/81894 Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
• CPC Class Codes: H01L 24/03 Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/10 : Bump connectors bumps on insulating substrates, e.g. chip carriers, H01L23/49816; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01011 : Sodium [Na]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/14 : Integrated circuits

Abstract

Some embodiments include methods of assembling integrated circuit packages in which at least two different conductive layers are formed over a bond pad region of a semiconductor die, and in which a conductive projection associated with an interposer is bonded through a gold ball to an outermost of the at least two conductive layers. The conductive layers may comprise one or more of silver, gold, copper, chromium, nickel, palladium, platinum, tantalum, titanium, vanadium and tungsten. In some embodiments, the bond pad region may comprise aluminum, an inner of the conductive layers may comprise nickel, an outer of the conductive layers may comprise gold, the conductive projection associated with the interposer may comprise gold; and the thermosonic bonding may comprise gold-to-gold bonding of the interposer projection to a gold ball, and gold-to-gold bonding of the outer conductive layer to the gold ball. Some embodiments include integrated circuit packages.

Claims

1. A method of assembling an integrated circuit package, comprising:

providing a semiconductor die comprising integrated circuitry, the die comprising electrically conductive bond pad regions and electrically conductive caps over an entirety of the bond pad regions;

providing an interposer having electrically conductive projections;

bonding gold-containing balls directly to the electrically conductive caps;

after bonding the gold-containing balls directly to the electrically conductive caps, forming z-axis conductive material over and between the gold-containing balls;

the z-axis conductive material entirely surrounding exposed surfaces of the gold-containing balls;

pressing the electrically conductive projections through the z-axis conductive material to directly contact the gold-containing balls;

the z-axis conductive material being in a non-conductive form as the z-axis conductive material is formed over and between the gold-containing balls;

some of the z-axis conductive material being compressed when the electrically conductive projections are pressed through the z-axis conductive material and being transformed to a conductive form;

the conductive form of the z-axis conductive material being directly adjacent the gold-containing balls;

bonding the electrically conductive projections directly to the gold-containing balls; and

utilizing vibrational energy having a frequency of at least about one kilohertz during the bonding of the electrically conductive projections to the gold-containing balls.

2. The method of claim 1 wherein the electrically conductive bond pad regions comprise one or both of Al and Cu;

and wherein the electrically conductive caps include one or more of Ag, Au, Co, Cr, Cu, Ni, Pd, Pt, Ta, Ti, V and W.

3. The method of claim 1 wherein the electrically conductive bond pad regions comprise aluminum;

and wherein the electrically conductive caps include a second layer over a first layer;

the first layer comprising nickel and the second layer comprising gold.

4. A method of assembling an integrated circuit package, comprising:

providing a semiconductor die comprising integrated circuitry, the die comprising electrically conductive bond pad regions and electrically conductive caps over an entirety of the bond pad regions;

providing an interposer having electrically conductive projections;

bonding electrically conductive balls directly to the electrically conductive caps;

after bonding the electrically conductive balls directly to the electrically conductive caps, forming z-axis conductive material over and between the electrically conductive balls;

the z-axis conductive material entirely surrounding exposed surfaces of the electrically conductive balls;

pressing the electrically conductive projections through the z-axis conductive material to directly contact the electrically conductive balls;

the z-axis conductive material being in a non-conductive form as the z-axis conductive material is formed over and between the electrically conductive balls;

some of the z-axis conductive material being compressed when the electrically conductive projections are pressed through the z-axis conductive material and being transformed to a conductive form;

the conductive form of the z-axis conductive material being directly adjacent the electrically conductive balls;

bonding the electrically conductive projections directly to the electrically conductive balls; and

utilizing vibrational energy having a frequency of at least about one kilohertz during the bonding of the electrically conductive projections to the electrically conductive balls.