Method for manufacturing semiconductor device
First Claim
1. A method for manufacturing a semiconductor device comprising:
- forming a first semiconductor film over a substrate;
wherein the first semiconductor film comprises an oxide semiconductor,irradiating the first semiconductor film with a laser beam through a photomask including a shield for shielding the laser beam to form an island-shaped semiconductor film in such a way that a first region in the first semiconductor film which has been irradiated with the laser beam through a region in which the shield in the photomask is not formed is sublimed, and a second region which is not irradiated with the laser beam in the first semiconductor film remains without being sublimed by using a region in which the shield in the photomask is formed as a mask;
forming a source electrode and a drain electrode over the island-shaped semiconductor film;
forming a gate insulating film over the island-shaped semiconductor film, the source electrode and the drain electrode; and
forming a gate electrode over the gate insulating film,wherein the source electrode and the drain electrode are formed in such a way that a shield for shielding the laser beam over a light-transmitting substrate is used as a photomask, a second semiconductor film formed as a first layer and a metal film formed as a second layer which are formed over a light-transmitting substrate are used as a source substrate, and the metal film is formed over the island-shaped semiconductor film by subliming the second semiconductor film in such a way that the source substrate is irradiated with the laser beam through the photomask.
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Abstract
An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost. A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film.
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Citations
11 Claims
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1. A method for manufacturing a semiconductor device comprising:
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forming a first semiconductor film over a substrate;
wherein the first semiconductor film comprises an oxide semiconductor,irradiating the first semiconductor film with a laser beam through a photomask including a shield for shielding the laser beam to form an island-shaped semiconductor film in such a way that a first region in the first semiconductor film which has been irradiated with the laser beam through a region in which the shield in the photomask is not formed is sublimed, and a second region which is not irradiated with the laser beam in the first semiconductor film remains without being sublimed by using a region in which the shield in the photomask is formed as a mask; forming a source electrode and a drain electrode over the island-shaped semiconductor film; forming a gate insulating film over the island-shaped semiconductor film, the source electrode and the drain electrode; and forming a gate electrode over the gate insulating film, wherein the source electrode and the drain electrode are formed in such a way that a shield for shielding the laser beam over a light-transmitting substrate is used as a photomask, a second semiconductor film formed as a first layer and a metal film formed as a second layer which are formed over a light-transmitting substrate are used as a source substrate, and the metal film is formed over the island-shaped semiconductor film by subliming the second semiconductor film in such a way that the source substrate is irradiated with the laser beam through the photomask. - View Dependent Claims (2, 3, 4, 5)
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6. A method for manufacturing a semiconductor device comprising:
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forming a semiconductor film over a substrate;
wherein the semiconductor film comprises an oxide semiconductor,selectively irradiating the semiconductor film with a laser beam through a photomask including a shield for shielding the laser beam to remove an irradiated portion of the semiconductor film, thereby, forming an island-shaped semiconductor film; forming a source electrode and a drain electrode over the island-shaped semiconductor film; forming a gate insulating film over the island-shaped semiconductor film, the source electrode and the drain electrode; and forming a gate electrode over the gate insulating film, wherein the source electrode and the drain electrode are formed in such a way that a shield for shielding the laser beam over a light-transmitting substrate is used as a photomask, a second semiconductor film formed as a first layer and a metal film formed as a second layer which are formed over a light-transmitting substrate are used as a source substrate, and the metal film is formed over the island-shaped semiconductor film by subliming the second semiconductor film in such a way that the source substrate is irradiated with the laser beam through the photomask. - View Dependent Claims (7, 8)
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9. A method for manufacturing a semiconductor device comprising:
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forming a gate electrode and a gate insulating film over a substrate; forming a semiconductor film over the gate insulating film;
wherein the semiconductor film comprises an oxide semiconductor,selectively irradiating the semiconductor film with a laser beam through a photomask including a shield pattern of an island-shaped semiconductor film to remove the semiconductor film apart from the island-shaped semiconductor film, thereby, forming the island-shaped semiconductor film; forming an insulating film over the island-shaped semiconductor film; and forming a source electrode and a drain electrode over the insulating film, the source electrode and the drain electrode being electrically connected to the island-shaped semiconductor film, wherein the source electrode and the drain electrode are formed in such a way that a shield for shielding the laser beam over a light-transmitting substrate is used as a photomask, a second semiconductor film formed as a first layer and a metal film formed as a second layer which are formed over a light-transmitting substrate are used as a source substrate, and the metal film is formed over the island-shaped semiconductor film by subliming the second semiconductor film in such a way that the source substrate is irradiated with the laser beam through the photomask. - View Dependent Claims (10, 11)
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Specification