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Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof

  • US 7,977,169 B2
  • Filed: 02/09/2007
  • Issued: 07/12/2011
  • Est. Priority Date: 02/15/2006
  • Status: Expired due to Fees
First Claim
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1. A manufacturing method of a semiconductor device comprising:

  • forming an oxide semiconductor thin film layer primarily comprising zinc oxide on a substrate by sputtering by using an oxide target primarily comprising zinc oxide;

    wherein forming the oxide semiconductor thin film layer comprises applying a first radio frequency electric power to the oxide target and applying a second radio frequency electric power, which is different from the first radio frequency electric power, to the substrate in order to control an orientation of zinc oxide that is a constituent of the oxide semiconductor thin film layer to have at least one orientation other than (002) orientation.

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