Method and apparatus for packaging circuit devices

• US 7,977,208 B2
• Filed: 12/30/2010
• Issued: 07/12/2011
• Est. Priority Date: 03/08/2002
• Status: Expired due to Fees

• Current Assignee: Invensas Corporation
• Original Assignee: Raytheon Company (Rtx Corporation)
• Inventors: Ables, Billy D., Ehmke, John C., Gooch, Roland W.
• Primary Examiner(s): Sarkar, Asok K
• Application Number:
  US12/982,346
• Publication Number:
  US 20110097845A1
• Time in Patent Office: 194 Days
• Field of Search: 257/E21.577, 438/456, 438/667, 438/672
• US Class Current: 438/456
• CPC Class Codes: B81B 2207/07 Interconnects
• CPC Class Codes: B81C 1/00095 Interconnects
• CPC Class Codes: B81C 1/00301 Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
• CPC Class Codes: H01L 2223/6622 Coaxial feed-throughs in active or passive substrates
• CPC Class Codes: H01L 23/04 characterised by the shape of the container or parts, e.g. caps, walls
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/16153 Cap enclosing a plurality of side-by-side cavities [e.g. E-shaped cap]

Abstract

A hermetically sealed package includes a lid (14) hermetically bonded to a wafer or substrate (12), with a chamber therebetween defined by a recess (16) in the lid. A circuit device (26) such as MEMS device is provided within the chamber on the substrate. A plurality of vias (41-46) are provided through the substrate, and each have a structure which facilitates a hermetic seal of a suitable level between opposite sides of the substrate. The vias provide electrical communication from externally of the assembly to the device disposed in the chamber.

Claims

1. A method comprising:

providing a wafer comprising a first side and a second side;

forming an opening through the wafer, the opening extending from the first side to the second side;

oxidizing the wafer;

forming a via in the opening, the forming comprising;

sputtering a first metal material onto the first and second sides and into the opening so as to completely cover surfaces within the opening;

sputtering a second metal material onto the first and second sides into the opening so as to completely cover the first metal material within the opening;

forming a glass material within the opening after the sputtering of the second metal material, the glass material forming a hermetic seal between the first and second sides of the wafer;

forming a first annular flange around the opening on the first side of the wafer, and a second annular flange around the opening on the second side of the wafer, the annular flanges comprising the first and second metal materials;

forming a micro-electro-mechanical system (MEMS) on the first side of the wafer;

forming a lid by creating a recess in a sheet of glass material; and

anodically bonding the lid to the first side of the wafer in order to form a hermetic seal between the lid and wafer, the lid being aligned so that the MEMS and the via is disposed within the recess of the lid;

wherein the bonding the lid to the wafer occurs in an atmosphere of an inert gas so that the MEMS is hermetically sealed under the lid in the inert gas.

2. The method of claim 1, wherein forming a glass material within the opening comprises:

applying a stencil to either the first side or the second side of the wafer;

aligning an opening in the stencil with the opening in the wafer;

screening a glass material through the opening in the stencil and into the opening in the wafer;

drying the glass material; and

firing the glass material.

3. The method of claim 1, wherein:

the first metal material comprises titanium tungsten; and

the second metal material comprises gold.

4. The method of claim 1, wherein forming the first annular flange and the second annular flange comprises etching each side of the wafer in order to remove portions of the first and second metal materials.

5. The method of claim 1, further comprising forming an electrical trace on the first side of the wafer by remove portions of the first and second metal materials.

6. The method of claim 1, further comprising forming a ground plane by removing portions of the first and second metal materials.

7. The method of claim 1, wherein the opening through the wafer comprises a diameter of approximately 153 to 250 μ

m.

8. A method of forming a via comprising:

forming an opening through a wafer;

oxidizing the wafer;

sputtering a first metal material onto the first and second sides and into the opening so as to completely cover surfaces within the opening;

sputtering a second metal material onto the first and second sides into the opening so as to completely cover the first metal material within the opening;

forming a glass material within the opening after the sputtering of the second metal material, the glass material forming a hermetic seal between the first and second sides of the wafer; and

forming a first annular flange around the opening on the first side of the wafer, and a second annular flange around the opening on the second side of the wafer, the annular flanges comprising the first and second metal materials.

9. The method of claim 8, wherein forming a glass material within the opening comprises:

applying a stencil to either side of the wafer;

aligning an opening in the stencil with the opening in the wafer;

screening a glass material through the opening in the stencil and into the opening in the wafer;

drying the glass material; and

firing the glass material.

10. The method of claim 8, wherein:

the first metal material comprises titanium tungsten; and

the second metal material comprises gold.

11. The method of claim 8, wherein forming the first annular flange and the second annular flange comprises etching either side of the wafer in order to remove portions of the first and second metal materials.