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Semiconductor device and method for manufacturing the same

  • US 7,977,675 B2
  • Filed: 04/14/2009
  • Issued: 07/12/2011
  • Est. Priority Date: 04/16/2008
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device including a field-effect transistor using a metallic oxide for a channel,wherein said metallic oxide includes a channel region, a source region and drain region, the source and drain regions having a lower oxygen content and higher conductivity than said channel region,wherein said channel region exhibits semiconductor characteristics and has an oxygen content that decreases with depth below the surface, andwherein the oxygen content in said source and drain regions is constant along the depth direction.

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