Semiconductor device and method for manufacturing the same
First Claim
1. A semiconductor device including a field-effect transistor using a metallic oxide for a channel,wherein said metallic oxide includes a channel region, a source region and drain region, the source and drain regions having a lower oxygen content and higher conductivity than said channel region,wherein said channel region exhibits semiconductor characteristics and has an oxygen content that decreases with depth below the surface, andwherein the oxygen content in said source and drain regions is constant along the depth direction.
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Abstract
A metallic oxide semiconductor device with high performance and small variations. It is a field effect transistor using a metallic oxide film for the channel, which includes a channel region and a source region and comprises a drain region with a lower oxygen content than the channel region in the metallic oxide, in which the channel region exhibits semiconductor characteristics and the oxygen content decreases with depth below the surface.
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Citations
13 Claims
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1. A semiconductor device including a field-effect transistor using a metallic oxide for a channel,
wherein said metallic oxide includes a channel region, a source region and drain region, the source and drain regions having a lower oxygen content and higher conductivity than said channel region, wherein said channel region exhibits semiconductor characteristics and has an oxygen content that decreases with depth below the surface, and wherein the oxygen content in said source and drain regions is constant along the depth direction.
Specification