Semiconductor device having thin film transistors on a metal substrate
First Claim
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1. A light emitting device comprising:
- a metal substrate;
a first insulating film formed over the metal substrate;
a first thin film transistor and a second thin film transistor formed over the first insulating film, each of the first thin film transistor and the second thin film transistor comprising a semiconductor layer and a gate electrode with a gate insulating film interposed therebetween;
a second insulating film having a first contact hole and a second contact hole formed over the first thin film transistor and the second thin film transistor;
a first wiring formed over the first insulating film and second insulating film, the first wiring being electrically connected to the first thin film transistor through the first contact hole and being in contact with a portion of the first insulating film;
a second wiring formed over the second insulating film and electrically connected to the second thin film transistor through the second contact hole;
a third insulating film formed over the second insulating film, the first wiring, and the second wiring; and
an EL element formed over the third insulating film,wherein a portion of the second insulating film is provided between the semiconductor layer of the first thin film transistor and a portion of the first wiring.
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Abstract
In a semiconductor device having a substrate which has a metal surface, an insulating film which is formed on the substrate having the metal surface, and a pixel unit which is formed on the insulating film; the pixel unit includes a TFT, and wiring lines connected with the TFT, and a storage capacitor is constituted by the substrate (11) having the metal surface, the insulating film (12), and the wiring line (21). As the insulating film is thinner, and as the area of a region where the insulating film and the wiring line lie in contact is larger, the storage capacitor is endowed with a larger capacity.
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Citations
20 Claims
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1. A light emitting device comprising:
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a metal substrate; a first insulating film formed over the metal substrate; a first thin film transistor and a second thin film transistor formed over the first insulating film, each of the first thin film transistor and the second thin film transistor comprising a semiconductor layer and a gate electrode with a gate insulating film interposed therebetween; a second insulating film having a first contact hole and a second contact hole formed over the first thin film transistor and the second thin film transistor; a first wiring formed over the first insulating film and second insulating film, the first wiring being electrically connected to the first thin film transistor through the first contact hole and being in contact with a portion of the first insulating film; a second wiring formed over the second insulating film and electrically connected to the second thin film transistor through the second contact hole; a third insulating film formed over the second insulating film, the first wiring, and the second wiring; and an EL element formed over the third insulating film, wherein a portion of the second insulating film is provided between the semiconductor layer of the first thin film transistor and a portion of the first wiring. - View Dependent Claims (2, 3, 4, 5)
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6. A light emitting device comprising:
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a metal substrate; a first insulating film formed over the metal substrate; a first thin film transistor and a second thin film transistor formed over the first insulating film, each of the first thin film transistor and the second thin film transistor comprising a semiconductor layer and a gate electrode with a gate insulating film interposed therebetween; a second insulating film having a first contact hole and a second contact hole formed over the first thin film transistor and the second thin film transistor; a first wiring formed over the first insulating film and second insulating film, the first wiring being electrically connected to the first thin film transistor through the first contact hole and being in contact with a portion of the first insulating film; a second wiring formed over the second insulating film and electrically connected to the second thin film transistor through the second contact hole; a third insulating film having a third contact hole formed over the second insulating film, the first wiring, and the second wiring; a first electrode formed over the third insulating film and electrically connected to the second wiring through the third contact hole; an EL layer formed over the first electrode; and a second electrode formed over the EL layer, wherein a portion of the second insulating film is provided between the semiconductor layer of the first thin film transistor and a portion of the first wiring. - View Dependent Claims (7, 8, 9, 10)
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11. An electronic book comprising:
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a main body; a operation switch; and a display portion, the display portion comprising; a metal substrate; a first insulating film formed over the metal substrate; a first thin film transistor and a second thin film transistor formed over the first insulating film, each of the first thin film transistor and the second thin film transistor comprising a semiconductor layer and a gate electrode with a gate insulating film interposed therebetween; a second insulating film having a first contact hole and a second contact hole formed over the first thin film transistor and the second thin film transistor; a first wiring formed over the first insulating film and second insulating film, the first wiring being electrically connected to the first thin film transistor through the first contact hole and being in contact with a portion of the first insulating film; a second wiring formed over the second insulating film and electrically connected to the second thin film transistor through the second contact hole; a third insulating film formed over the second insulating film, the first wiring, and the second wiring; and an EL element formed over the third insulating film, wherein a portion of the second insulating film is provided between the semiconductor layer of the first thin film transistor and a portion of the first wiring. - View Dependent Claims (12, 13, 14, 15)
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16. An electronic book comprising:
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a main body; a operation switch; and a display portion, the display portion comprising; a metal substrate; a first insulating film formed over the metal substrate; a first thin film transistor and a second thin film transistor formed over the first insulating film, each of the first thin film transistor and the second thin film transistor comprising a semiconductor layer and a gate electrode with a gate insulating film interposed therebetween; a second insulating film having a first contact hole and a second contact hole formed over the first thin film transistor and the second thin film transistor; a first wiring formed over the first insulating film and second insulating film, the first wiring being electrically connected to the first thin film transistor through the first contact hole and being in contact with a portion of the first insulating film; a second wiring formed over the second insulating film and electrically connected to the second thin film transistor through the second contact hole; a third insulating film having a third contact hole formed over the second insulating film, the first wiring, and the second wiring; a first electrode formed over the third insulating film and electrically connected to the second wiring through the third contact hole; an EL layer formed over the first electrode; and a second electrode formed over the EL layer, wherein a portion of the second insulating film is provided between the semiconductor layer of the first thin film transistor and a portion of the first wiring. - View Dependent Claims (17, 18, 19, 20)
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Specification