Light emitter device
First Claim
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1. A light emitting device (LED), comprising:
- a Group IV-based substrate;
an AlN nucleation layer formed on the Group IV-based substrate;
a GaN epitaxial layer formed on the AlN nucleation layer;
a distributed Bragg reflector (DBR) multi-layer structure formed on the epitaxial layer, wherein the DBR multi-layer structure has a reflective surface having a tilt angle ranged from 5 to 75 degree with respect to a vertical line; and
an LED active layer formed on the DBR multi-layer structure.
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Abstract
A light emitting device (LED) structure formed on a Group IV-based semiconductor substrate is provided. The LED structure includes a Group IV-based substrate, an AlN nucleation layer formed on the Group IV-based substrate, a GaN epitaxial layer formed on the AlN nucleation layer, a distributed Bragg reflector (DBR) multi-layer structure formed on the epitaxial layer, and an LED active layer formed on the DBR multi-layer structure.
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Citations
16 Claims
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1. A light emitting device (LED), comprising:
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a Group IV-based substrate; an AlN nucleation layer formed on the Group IV-based substrate; a GaN epitaxial layer formed on the AlN nucleation layer; a distributed Bragg reflector (DBR) multi-layer structure formed on the epitaxial layer, wherein the DBR multi-layer structure has a reflective surface having a tilt angle ranged from 5 to 75 degree with respect to a vertical line; and an LED active layer formed on the DBR multi-layer structure. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A light emitting device (LED), comprising:
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a substrate having a distributed Bragg reflector (DBR) multi-layer structure, wherein the DBR multi-layer structure has a reflective surface having a tilt angle ranged from 5 to 75 degree with respect to a vertical line; a GaN buffer layer formed on the substrate; and an LED active layer formed on the GaN buffer layer. - View Dependent Claims (9, 10, 11, 12, 13, 16)
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14. A light emitting device (LED), comprising:
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a substrate having a distributed Bragg reflector (DBR) multi-layer structure, and the substrate further comprising; a Group IV-based substrate; a nucleation layer formed on the Group IV-based substrate; an epitaxial layer formed on the nucleation layer; and a patterned distributed Bragg reflector (DBR) multi-layer structure formed on the epitaxial layer, wherein the DBR multi-layer structure has a reflective surface having a tilt angle ranged from 5 to 75 degree with respect to a vertical line; a GaN buffer layer formed on the substrate; and an LED active layer formed on the GaN buffer layer. - View Dependent Claims (15)
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Specification