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Semiconductor device with SiO2 film formed on side surface of nitride based semiconductor layer

  • US 7,977,701 B2
  • Filed: 06/18/2010
  • Issued: 07/12/2011
  • Est. Priority Date: 07/29/1998
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a substrate;

    a first electrode layer formed on said substrate;

    a nitride based semiconductor layer formed on said first electrode layer and containing at least one of boron, gallium, aluminum and indium;

    a second electrode layer formed on an upper surface of said nitride based semiconductor layer; and

    an SiO2 film formed on a side surface of said nitride based semiconductor layer and said first electrode.

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