Semiconductor device

• US 7,978,043 B2
• Filed: 07/29/2010
• Issued: 07/12/2011
• Est. Priority Date: 11/06/2008
• Status: Expired due to Fees

• Current Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Original Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Inventors: Hirofuji, Yuichi, Nabeshima, Yutaka
• Primary Examiner(s): NGUYEN, TUYEN T
• Application Number:
  US12/846,451
• Publication Number:
  US 20100289608A1
• Time in Patent Office: 348 Days
• Field of Search: 336/65, 336/200, 336206-208, 336/232, 257/531
• US Class Current: 336/200
• CPC Class Codes: H01F 17/0006 Printed inductances printed coils for dynamo-electric machines H02K3/26; printed circuits H05K
• CPC Class Codes: H01F 2017/0046 with a conductive path having a bridge
• CPC Class Codes: H01F 41/041 Printed circuit coils apparatus or processes for manufacturing printed circuits in general H05K3/00
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 27/08 including only semiconductor components of a single kind
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01Q 1/2283 mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
• CPC Class Codes: H01Q 7/00 Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
• CPC Class Codes: H01Q 9/27 Spiral antennas

Abstract

A semiconductor device includes a semiconductor substrate including at least one of a circuit and a circuit element, and an inductor element having a coil axis extending in a direction parallel to a main surface of the semiconductor substrate and disposed adjacent to the main surface. A main direction of a magnetic field induced by passing a current through the inductor element is parallel to the main surface.

Claims

1. A semiconductor device comprising:

a semiconductor substrate including at least one of a circuit and a circuit element; and

an inductor element having a coil axis extending in a direction parallel to a main surface of the semiconductor substrate and disposed adjacent to the main surface,

wherein

a main direction of a magnetic field induced by passing a current through the inductor element is parallel to the main surface,

the inductor element is in a spiral shape,

the inductor element is provided on a main surface of an insulating substrate,

the insulating substrate has a metal thin film provided on a rear surface thereof, and

the inductor element is electrically connected to the metal thin film via a through electrode provided in the insulating substrate.

2. The semiconductor device of claim 1, further comprising:

a substrate or a block disposed adjacent to the main surface of the semiconductor substrate and made of a semiconductor material, a high-resistance material, or an insulating material,

wherein the inductor element is supported by the substrate or the block.

3. The semiconductor device of claim 1, further comprising:

conductor pads formed in the main surface of the semiconductor substrate,

wherein the inductor element includes a pair of connection terminals electrically connected to the semiconductor substrate via the conductor pads.

4. The semiconductor device of claim 3, wherein the connection terminals and the conductor pads are connected via gold bumps.

5. The semiconductor device of claim 1, wherein the inductor element includes a winding having one or more turns.

6. The semiconductor device of claim 3, wherein the pair of connection terminals of the inductor element are oriented in the same direction.

7. The semiconductor device of claim 1, wherein there are a plurality of the inductor elements.

8. The semiconductor device of claim 7, wherein no two of the inductor elements are inductively coupled with each other.

9. The semiconductor device of claim 7, wherein at least two of the inductor elements are inductively coupled with each other.

10. A semiconductor device comprising:

a semiconductor substrate including at least one of a circuit and a circuit element; and

an inductor element disposed adjacent to a main surface of the semiconductor substrate and disposed in a plane perpendicular to the main surface,

wherein

a main direction of a magnetic field induced by passing a current through the inductor element is parallel to the main surface,

the inductor element is in a spiral shape,

the inductor element is provided on a main surface of an insulating substrate,

the insulating substrate has a metal thin film provided on a rear surface thereof, and

the inductor element is electrically connected to the metal thin film via a through electrode provided in the insulating substrate.

11. The semiconductor device of claim 10, further comprising:

a substrate or a block disposed adjacent to the main surface of the semiconductor substrate and made of a semiconductor material, a high-resistance material, or an insulating material,

wherein the inductor element is supported by the substrate or the block.

12. The semiconductor device of claim 10, further comprising:

conductor pads formed in the main surface of the semiconductor substrate,

wherein the inductor element includes a pair of connection terminals electrically connected to the semiconductor substrate via the conductor pads.

13. The semiconductor device of claim 12, wherein the connection terminals and the conductor pads are connected via gold bumps.

14. The semiconductor device of claim 10, wherein the inductor element includes a winding having one or more turns.

15. The semiconductor device of claim 12, wherein the pair of connection terminals of the inductor element are oriented in the same direction.

16. The semiconductor device of claim 10, wherein there are a plurality of the inductor elements.

17. The semiconductor device of claim 16, wherein no two of the inductor elements are inductively coupled with each other.

18. The semiconductor device of claim 16, wherein at least two of the inductor elements are inductively coupled with each other.