Integrated circuit incorporating decoders disposed beneath memory arrays

• US 7,978,492 B2
• Filed: 03/16/2010
• Issued: 07/12/2011
• Est. Priority Date: 11/16/1998
• Status: Expired due to Fees

• Current Assignee: SanDisk Technologies LLC (Western Digital Corporation)
• Original Assignee: SanDisk 3D LLC (Western Digital Corporation)
• Inventors: Cleeves, James M., Lee, Thomas H., Johnson, Mark G.
• Primary Examiner(s): Nguyen; Viet Q
• Application Number:
  US12/725,269
• Publication Number:
  US 20100171152A1
• Time in Patent Office: 483 Days
• Field of Search: 365/63, 365/66, 365/72, 365/130, 365/230.06
• US Class Current: 365/63
• CPC Class Codes: G11C 11/5692 read-only digital stores using storage elements with more than two stable states
• CPC Class Codes: G11C 13/003 Cell access
• CPC Class Codes: G11C 17/06 using diode elements G11C17/14 takes precedence
• CPC Class Codes: G11C 17/14 in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
• CPC Class Codes: G11C 17/16 using electrically-fusible links
• CPC Class Codes: G11C 17/165 Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses digital stores using resistance random access memory elements G11C13/0002
• CPC Class Codes: G11C 2213/71 Three dimensional array
• CPC Class Codes: G11C 2213/76 Array using an access device for each cell which being not a transistor and not a diode
• CPC Class Codes: H01L 27/101 including resistors or capacitors only
• CPC Class Codes: H01L 27/1021 including diodes only
• CPC Class Codes: H10B 63/84 arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
• CPC Class Codes: H10N 70/011 Manufacture or treatment of multistable switching devices
• CPC Class Codes: H10N 70/826 adapted for essentially vertical current flow, e.g. sandwich or pillar type devices

Abstract

A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.

Claims

1. An integrated circuit, comprising:

a first memory array;

a first row decoder, a portion of said first row decoder is folded beneath said first memory array, said first row decoder includes a first set of tabs;

a second memory array; and

a second row decoder, a portion of said second row decoder is folded beneath said second memory array, said second row decoder includes a second set of tabs, said first set of tabs and said second set of tabs are interdigitated.

2. The integrated circuit of claim 1, wherein:

said portion of said first row decoder folded beneath said first memory array is arranged under said first memory array; and

said first set of tabs is not arranged under said first memory array.

3. The integrated circuit of claim 1, further comprising:

a third memory array; and

a third row decoder, a portion of said third row decoder is folded beneath said third memory array, said third row decoder includes a third set of tabs, said third set of tabs and said first set of tabs are interdigitated.

4. The integrated circuit of claim 1, wherein:

said first set of tabs includes a first tab and a second tab, said second set of tabs includes a third tab, said third tab is arranged between said first tab and said second tab.

5. The integrated circuit of claim 1, wherein:

said first memory array includes at least two vertically stacked layers of storage elements.

6. The integrated circuit of claim 1, wherein:

said first memory array includes a plurality of non-volatile storage elements.

7. The integrated circuit of claim 3, wherein:

said third set of tabs and said second set of tabs are not interdigitated.

14. The integrated circuit of claim 1, wherein:

said first set of tabs includes a first top-end tab and a first bottom-end tab;

said second set of tabs includes a second top-end tab and a second bottom-end tab;

said second bottom-end tab is arranged in a first central region between said first top-end tab and said first bottom-end tab; and

said first top-end tab is arranged in a second central region between said second top-end tab and said second bottom-end tab.

15. The integrated circuit of claim 14, further comprising:

a third memory array;

a third row decoder, said third row decoder includes a third top-end tab and a third bottom-end tab, said third row decoder further includes a third portion of said third row decoder, said third portion of said third row decoder is beneath said third memory array; and

a third central region between said third top-end tab and said third bottom-end tab, said first bottom-end tab is arranged in said third central region.

16. The integrated circuit of claim 15, wherein:

said third top-end tab is arranged in said first central region.

17. The integrated circuit of claim 14, further comprising:

said first memory array includes at least two vertically stacked layers of storage elements.

18. The integrated circuit of claim 14, further comprising:

said first memory array includes a plurality of non-volatile storage elements.

19. The integrated circuit of claim 16, wherein:

said first top-end tab is adjacent to said second bottom-end tab.

8. An integrated circuit, comprising:

a first memory array;

a first row decoder, a first portion of said first row decoder is beneath said first memory array;

a second memory array; and

a second row decoder, a first portion of said second row decoder is beneath said second memory array, a second portion of said first row decoder is interdigitated with a second portion of said second row decoder.

9. The integrated circuit of claim 8, wherein:

said second portion of said first row decoder and said second portion of said second row decoder are not arranged underneath said first memory array.

10. The integrated circuit of claim 8, further comprising:

a third memory array; and

a third row decoder, a first portion of said third row decoder is beneath said third memory array, a second portion of said third row decoder is interdigitated with said second portion of said first row decoder.

11. The integrated circuit of claim 8, further comprising:

said first memory array includes at least two vertically stacked layers of storage elements.

12. The integrated circuit of claim 8, further comprising:

said first memory array includes a plurality of non-volatile storage elements.

13. The integrated circuit of claim 10, further comprising:

said second portion of said third row decoder is not interdigitated with said second portion of said second row decoder.