Radio frequency identification device initializing a memory using an offset voltage

• US 7,978,494 B2
• Filed: 12/29/2008
• Issued: 07/12/2011
• Est. Priority Date: 06/09/2008
• Status: Expired due to Fees

• Current Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Original Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Inventors: Kang, Hee Bok
• Primary Examiner(s): Lam; David
• Application Number:
  US12/344,638
• Publication Number:
  US 20090303771A1
• Time in Patent Office: 925 Days
• Field of Search: 365/145, 365/149, 365/189.09, 365/192, 340/10.34, 340/572.1
• US Class Current: 365/145
• CPC Class Codes: G11C 11/22 using ferroelectric elements
• CPC Class Codes: G11C 5/142 Contactless power supplies, e.g. RF, induction, or IR
• CPC Class Codes: G11C 7/12 Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
• CPC Class Codes: G11C 7/22 Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management

Abstract

An RFID device sets initial data stored in a memory using an offset voltage and includes an analog block, a digital block, and a memory block. The memory blocks is configured to read/write data in a cell array unit. The memory block includes an offset controller that is configured to set an offset voltage value of a bit line connected to the cell array unit.

Claims

1. An RFID device comprising an analog block, a digital block, and a memory block, the memory block being configured to save data in a cell array unit,

wherein the memory block comprises an offset controller configured to respectively set an offset voltage value of a bit line for setting the data connected to the cell array unit.

2. The RFID device according to claim 1, wherein the memory block further comprises:

a word line decoder configured to decode an address and select a word line corresponding to the cell array unit;

a sense amplifier configured to sense and amplify data of a selected bit line in the cell array unit;

an input/output buffer configured to output data of the cell array unit and to transmit inputted data to the cell array unit; and

a control signal processing unit configured to output a control signal for read/write operations to the word line decoder, the sense amplifier, and the input/output buffer.

3. The RFID device according to claim 2, wherein the cell array unit comprises:

a cell array having a plurality of unit cells positioned at intersections of the bit line and a plurality of word lines and a plurality of plate lines; and

a bit line equalizer configured to equalize the bit line in response to a bit line equalizing signal.

4. The RFID device according to claim 1, wherein the offset controller comprises an offset capacitor connected to a first bit line among the first bit line and a second bit line.

5. The RFID device according to claim 4, wherein the first bit line and the second bit line are connected to one sense amplifier.

6. The RFID device according to claim 4, wherein the first bit line has a capacitance equal to a sum of an original capacitance of the first bit line and a capacitance of the offset capacitor.

7. The RFID device according to claim 6, wherein the second bit line has a capacitance equal to an original capacitance of the second bit line, wherein the original capacitance of the second bit line is substantially equal to the original capacitance of the first bit line.

8. The RFID device according to claim 4, wherein the offset controller sets a voltage level of the first bit line, such that the voltage level of the first bit line is different from that of the second bit line before activation of a sense amplifier.

9. The RFID device according to claim 4, wherein the offset controller transitions a voltage level of the second bit line to a high level and transitions the voltage level of the first bit line to a low level after activation of a sense amplifier.

10. The RFID device according to claim 1, wherein the cell array unit comprises a nonvolatile ferroelectric capacitor.

11. An RFID device comprising an analog block, a digital block, and a memory block, the memory block being configured to read/write data in a cell array unit,

wherein the memory block comprises a sense amplifier configured to sense and amplify data of a bit line selected from the cell array unit and set an offset voltage value of the bit line,

wherein input terminals of the sense amplifier are connected to a first bit line and a second bit line, and wherein a current driving capacity of the input terminal connected to the first bit line is higher than that of the input terminal connected to the second bit line.

12. The RFID device according to claim 11, wherein the memory block further comprises:

a word line decoder configured to decode an address and select a word line corresponding to the cell array unit;

an input/output buffer configured to output data of the cell array unit and transmit inputted data to the cell array unit; and

a control signal processing unit configured to output a control signal for read/write operations to the word line decoder, the sense amplifier, and the input/output buffer.

13. The RFID device according to claim 12, wherein the cell array unit comprises:

a cell array having a plurality of unit cells positioned at intersections of the bit line and a plurality of word lines and a plurality of plate lines; and

a bit line equalizer configured to equalize the bit line in response to a bit line equalizing signal.

14. The RFID device according to claim 11, wherein the first bit line and the second bit line are connected to one sense amplifier.

15. The RFID device according to claim 11, wherein the first bit line has a capacitance equal to an original capacitance of the first bit line and the second bit line has a capacitance equal to an original capacitance, and wherein the first original capacitance is substantially equal to the second original capacitance.

16. The RFID device according to claim 11, wherein the offset controller sets a voltage level of the first bit line, such that the voltage level of the first bit line is different from that of the second bit line before activation of the sense amplifier.

17. The RFID device according to claim 11, wherein the offset controller transitions the voltage level of the second bit line to a high level and transitions the voltage level of the first bit line to a low level after activation of the sense amplifier.

18. The RFID device according to claim 11, wherein the sense amplifier sets the first bit line to have an offset voltage value higher than that of the second bit line by kV, wherein k is a constant having a value greater than 1.

19. The RFID device according to claim 11, wherein the sense amplifier comprises:

an activation unit configured to control activation of the sense amplifier in response to a sense amplifier enable signal; and

a driving unit connected to the first bit line and the second bit line, and the driving unit configured to set the first bit line to have a different offset voltage value from that of the second bit line.

20. The RFID device according to claim 19, wherein the driving unit includes a pair of PMOS transistors and a pair of NMOS transistors cross-coupled between the first bit line and the second bit line.

21. The RFID device according to claim 19, wherein the driving unit comprises a plurality of transistors, the plurality of transistors having different channel widths.

22. The RFID device according to claim 19, wherein the driving unit comprises a plurality of transistors, the plurality of transistors having different channel lengths.

23. The RFID device according to claim 19, wherein the driving unit comprises a plurality of transistors, the plurality of transistors having different threshold voltages.

24. The RFID device according to claim 19, wherein the driving unit comprises transistors, the plurality of transistors having different drain-source currents.

25. The RFID device according to claim 11, wherein the cell array unit comprises a nonvolatile ferroelectric capacitor.