Method of fabricating pixel structure and method of fabricating organic light emitting device
First Claim
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1. A method of fabricating a pixel structure on a substrate, comprising:
- forming a gate electrode on the substrate;
forming a dielectric layer to cover the gate electrode and the substrate;
forming a patterned metal oxide semiconductor layer and a patterned metallic etching stop layer on the dielectric layer above the gate electrode, wherein the patterned metallic etching stop layer is stacked on the patterned metal oxide semiconductor layer and the metallic etching stop layer is made of a metallic material;
forming a first conductive layer to cover the patterned metallic etching stop layer and the dielectric layer;
patterning the first conductive layer by using the patterned metallic etching stop layer as an etching stop layer to form a source and a drain;
forming a second conductive layer to cover the source, the drain and the dielectric layer;
patterning the second conductive layer by using the patterned metallic etching stop layer as an etching stop layer to form a first electrode layer; and
removing a portion of the patterned metallic etching stop layer exposed between the source and the drain.
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Abstract
A method of fabricating a pixel structure is provided. A gate electrode is formed on a substrate, and a dielectric layer is formed on the gate electrode. A patterned metal oxide semiconductor layer and a patterned metallic etching stop layer are formed on the dielectric layer above the gate electrode. A first conductive layer is formed to cover the patterned metallic etching stop layer and the dielectric layer. The first conductive layer is patterned by using the patterned metallic etching stop layer as an etching stop layer to form a source and a drain. A second conductive layer is formed to cover the source, the drain and the dielectric layer. The second conductive layer is patterned by using the patterned metallic etching stop layer as an etching stop layer to form a first electrode layer. The patterned metallic etching stop layer exposed between the source and the drain is removed.
22 Citations
20 Claims
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1. A method of fabricating a pixel structure on a substrate, comprising:
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forming a gate electrode on the substrate; forming a dielectric layer to cover the gate electrode and the substrate; forming a patterned metal oxide semiconductor layer and a patterned metallic etching stop layer on the dielectric layer above the gate electrode, wherein the patterned metallic etching stop layer is stacked on the patterned metal oxide semiconductor layer and the metallic etching stop layer is made of a metallic material; forming a first conductive layer to cover the patterned metallic etching stop layer and the dielectric layer; patterning the first conductive layer by using the patterned metallic etching stop layer as an etching stop layer to form a source and a drain; forming a second conductive layer to cover the source, the drain and the dielectric layer; patterning the second conductive layer by using the patterned metallic etching stop layer as an etching stop layer to form a first electrode layer; and removing a portion of the patterned metallic etching stop layer exposed between the source and the drain. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method of fabricating an organic light emitting device on a substrate, comprising:
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forming a gate electrode on the substrate; forming a dielectric layer to cover the gate electrode and the substrate; forming a patterned metal oxide semiconductor layer and a patterned metallic etching stop layer on the dielectric layer above the gate electrode, wherein the patterned metallic etching stop layer is stacked on the patterned metal oxide semiconductor layer and the metallic etching stop layer is made of a metallic material; forming a first conductive layer to cover the patterned metallic etching stop layer and the dielectric layer; pattern the first conductive layer by using the patterned metallic etching stop layer as an etching stop layer to form a source and a drain; forming a second conductive layer to cover the source, the drain and the dielectric layer; pattern the second conductive layer by using the patterned metallic etching stop layer as an etching stop layer to form a first electrode layer; removing a portion of the patterned metallic etching stop layer exposed between the source and the drain; forming an organic material layer on the substrate, wherein the organic material layer exposes the first electrode layer; forming a light emitting layer on the exposed first electrode layer; and forming a second electrode layer on the light emitting layer.
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Current AssigneeAU Optronics Corporation
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Original AssigneeAU Optronics Corporation
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InventorsChen, Chia-Yu, Lee, Liu-Chung, Ting, Hung-Che
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Primary Examiner(s)Smith; Matthew
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Assistant Examiner(s)JEAN BAPTISTE, WILNER
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Application NumberUS12/908,872Time in Patent Office272 DaysField of Search438/34, 438/149, 438/592, 438/104, 438/162, 438/164, 257/43, 257/59, 257/E27.111, 257/E29.094US Class Current438/34CPC Class CodesH01L 27/1225 with semiconductor material...H10K 59/1213 the pixel elements being TFTsH10K 59/123 Connection of the pixel ele...
