Method of making thin film transistor with zinc oxide based semiconductor layer and zinc oxide based insulation layer
First Claim
1. A method of fabricating an oxide thin-film transistor, comprising:
- forming a gate electrode on a substrate;
forming a gate insulation layer on the substrate;
depositing an amorphous zinc oxide-based semiconductor layer made of an amorphous zinc oxide-based semiconductor and an amorphous zinc oxide-based insulation layer having an oxide characteristic in-situ on the gate insulation layer;
forming an active layer made of the amorphous zinc oxide-based semiconductor over the gate electrode while at the same time forming a channel protection layer made of the amorphous zinc oxide-based insulation layer on a channel region of the active layer; and
forming a source electrode and a drain electrode electrically connected to a source region and a drain region of the active layer over the active layer.
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Abstract
According to a method of fabricating an oxide thin-film transistor, when a thin-film transistor is fabricated by using an amorphous zinc oxide (ZnO)-based semiconductor as an active layer, it may be possible to reduce a tact time as well as attain an enhanced element characteristic by depositing an insulation layer having an oxide characteristic in-situ through controlling oxygen (O2) flow subsequent to depositing an oxide semiconductor using a sputter, and the method may include the steps of forming a gate electrode on a substrate; forming a gate insulation layer on the substrate; depositing an amorphous zinc oxide-based semiconductor layer made of an amorphous zinc oxide-based semiconductor and an amorphous zinc oxide-based insulation layer having an oxide characteristic in-situ on the gate insulation layer; forming an active layer made of the amorphous zinc oxide-based semiconductor over the gate electrode while at the same time forming a channel protection layer made of the amorphous zinc oxide-based insulation layer on a channel region of the active layer; and forming a source electrode and a drain electrode electrically connected to a source region and a drain region of the active layer over the active layer.
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Citations
10 Claims
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1. A method of fabricating an oxide thin-film transistor, comprising:
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forming a gate electrode on a substrate; forming a gate insulation layer on the substrate; depositing an amorphous zinc oxide-based semiconductor layer made of an amorphous zinc oxide-based semiconductor and an amorphous zinc oxide-based insulation layer having an oxide characteristic in-situ on the gate insulation layer; forming an active layer made of the amorphous zinc oxide-based semiconductor over the gate electrode while at the same time forming a channel protection layer made of the amorphous zinc oxide-based insulation layer on a channel region of the active layer; and forming a source electrode and a drain electrode electrically connected to a source region and a drain region of the active layer over the active layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification