Nitride semiconductor light-emitting device having high light efficiency and method of manfacturing the same

• US 7,981,775 B2
• Filed: 12/28/2005
• Issued: 07/19/2011
• Est. Priority Date: 12/28/2004
• Status: Expired due to Fees

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: Sone, Cheol-soo, Yoon, Suk-ho
• Primary Examiner(s): Landau; Matthew C
• Assistant Examiner(s): Booker; Vicki B
• Application Number:
  US11/318,615
• Publication Number:
  US 20060138432A1
• Time in Patent Office: 2,029 Days
• Field of Search: 438/22, 438/32, 438/481, 257/98, 257/E21.293, 257/E33.005, 257/E21.132, 257/E33.074, 257/91
• US Class Current: 438/481
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02505 consisting of more than two layers
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 21/0332 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/3185 of siliconnitrides
• CPC Class Codes: H01L 33/005 Processes
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

Provided is a nitride semiconductor light emitting diode and a method of manufacturing the same. The method includes sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate, in-situ depositing a mask layer on a region of the surface of the second semiconductor layer, and selectively growing a third semiconductor layer formed in a textured structure on the second semiconductor layer by depositing a semiconductor material on the second semiconductor layer and the mask layer.

Claims

1. A method of manufacturing a semiconductor light emitting diode, comprising operations of:

sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate;

in-situ depositing a mask layer on a region of a surface of the second semiconductor layer;

selectively growing a third semiconductor layer in a textured structure on the second semiconductor layer by depositing the same material as that of the second semiconductor layer on the second semiconductor layer and the mask layer; and

forming a transparent electrode on the third semiconductor,

wherein in the in-situ depositing of the mask layer, openings having irregular sizes and periods are formed in the mask layer, without etching,

the first semiconductor layer is formed of an n-type semiconductor material and the second semiconductor layer is formed of a p-type semiconductor material,

the third semiconductor layer in the textured structure is formed through the openings,

the transparent electrode is formed to have a textured structure having a shape which corresponds to that of the textured structure of the third semiconductor layer, and

light generated by the active layer is extracted to the outside through the transparent electrode.

2. The method of claim 1, wherein the in-situ depositing of a mask layer on a region of the surface of the second semiconductor layer comprises forming the mask layer by adding a silicon (Si) source and a nitrogen (N) source to the second semiconductor layer.

3. The method of claim 2, wherein the silicon Si source comprises at least one of silicon source selected from the group consisting of triethylsilane (TESi), tributhy silane (TBSi), ditertiarybuthysilane (DTBSI), silane (SiH₄) and disilane (Si₂H₆).

4. The method of claim 2, wherein the nitrogen (N) source is NH₃.

5. The method of claim 1, wherein the operations in claim 1 are performed by MOCVD (metalorganic chemical vapor deposition) or MBE (molecular beam epitaxy).