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Light emitting device, method of manufacturing the same, and manufacturing apparatus therefor

  • US 7,982,206 B2
  • Filed: 05/12/2010
  • Issued: 07/19/2011
  • Est. Priority Date: 12/28/2001
  • Status: Expired due to Fees
First Claim
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1. A light emitting device comprising:

  • a first transistor and a second transistor formed over a first substrate;

    an insulating film formed over the first transistor and the second transistor;

    a first electrode formed over the first transistor and the insulating film, and electrically connected to the first transistor through a first contact hole in the insulating film;

    a second electrode formed over the second transistor and the insulating film, and electrically connected to the second transistor through a second contact hole in the insulating film;

    an insulator covering an edge portion of the first electrode and an edge portion of the second electrode, and filling the balance of the first contact hole and the balance of the second contact hole;

    a first light emitting layer formed over the first electrode and the insulator;

    a second light emitting layer formed over the second electrode and the insulator;

    a first colorization layer formed over a second substrate and being opposed to the first light emitting layer;

    a second colorization layer formed over the second substrate and being opposed to the second light emitting layer; and

    a shading portion formed between the first colorization layer and the second colorization layer,wherein the shading portion is formed over the second substrate and is opposed to the insulator.

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