H01L 2224/05166 :
Titanium [Ti] as principal ...
H01L 2224/05552 :
in top view
H01L 2224/05553 :
being rectangular
H01L 2224/05554 :
being square
H01L 2224/05555 :
being circular or elliptic
H01L 2224/05644 :
Gold [Au] as principal cons...
H01L 2224/05666 :
Titanium [Ti] as principal ...
H01L 2224/08225 :
the item being non-metallic...
H01L 2224/2919 :
with a principal constituen...
H01L 2224/32225 :
the item being non-metallic...
H01L 2224/80 :
Methods for connecting semi...
H01L 2224/80006 :
being a temporary or sacrif...
H01L 2224/80121 :
Active alignment, i.e. by a...
H01L 2224/80862 :
Heat curing
H01L 2224/80895 :
between electrically conduc...
H01L 2224/83 :
using a layer connector
H01L 2224/83005 :
being a temporary or sacrif...
H01L 2224/83121 :
Active alignment, i.e. by a...
H01L 2224/83192 :
wherein the layer connector...
H01L 2224/83193 :
wherein the layer connector...
H01L 2224/8385 :
using a polymer adhesive, e...
H01L 2224/83862 :
Heat curing
H01L 2224/9202 :
Forming additional connecto...
H01L 2224/94 :
at wafer-level, i.e. with c...
H01L 2224/95 :
at chip-level, i.e. with co...
H01L 2224/97 :
the devices being connected...
H01L 23/02 :
Containers; Seals H01L23/12...
H01L 24/03 :
Manufacturing methods
H01L 24/05 :
of an individual bonding area
H01L 24/08 :
of an individual bonding area
H01L 24/29 :
of an individual layer conn...
H01L 24/32 :
of an individual layer conn...
H01L 24/80 :
Methods for connecting semi...
H01L 24/83 :
using a layer connector
H01L 24/94 :
at wafer-level, i.e. with c...
H01L 24/97 :
the devices being connected...
H01L 25/0753 :
the devices being arranged ...
H01L 27/1285 :
using control of the anneal...
H01L 27/1292 :
using liquid deposition, e....
H01L 29/04 :
characterised by their crys...
H01L 29/06 :
characterised by their shap...
H01L 29/0665 :
the shape of the body defin...
H01L 29/0673 :
oriented parallel to a subs...
H01L 29/0676 :
oriented perpendicular or a...
H01L 29/068 :
comprising a junction
H01L 29/12 :
characterised by the materi...
H01L 29/76 :
Unipolar devices , e.g. fie...
H01L 29/78603 :
characterised by the insula...
H01L 29/78681 :
having a semiconductor body...
H01L 29/78696 :
characterised by the struct...
H01L 2924/00 :
Indexing scheme for arrange...
H01L 2924/00012 :
Relevant to the scope of th...
H01L 2924/00014 :
the subject-matter covered ...
H01L 2924/01032 :
Germanium [Ge]
H01L 2924/0665 :
Epoxy resin
H01L 2924/10253 :
Silicon [Si]
H01L 2924/10329 :
Gallium arsenide [GaAs]
H01L 2924/12032 :
Schottky diode
H01L 2924/12036 :
PN diode
H01L 2924/12041 :
LED
H01L 2924/12042 :
LASER
H01L 2924/12043 :
Photo diode
H01L 2924/12044 :
OLED
H01L 2924/1305 :
Bipolar Junction Transistor...
H01L 2924/13055 :
Insulated gate bipolar tran...
H01L 2924/1306 :
Field-effect transistor [FET]
H01L 2924/13063 :
Metal-Semiconductor Field-E...
H01L 2924/13091 :
Metal-Oxide-Semiconductor F...
H01L 2924/14 :
Integrated circuits
H01L 2924/1461 :
MEMS
H01L 2924/15159 :
Side view
H01L 2924/15162 :
Top view
H01L 2924/15788 :
Glasses, e.g. amorphous oxi...
H01L 2924/1579 :
with a principal constituen...
H01L 31/0392 :
including thin films deposi...
H01L 31/03926 :
comprising a flexible subst...
H01L 31/1804 :
comprising only elements of...
H01L 31/1864 :
Annealing
H01L 31/1896 :
for thin-film semiconductors
H01L 33/007 :
comprising nitride compounds
H01L 33/0093 :
Wafer bonding; Removal of t...
H01L 33/32 :
containing nitrogen
Y02E 10/547 :
Monocrystalline silicon PV ...
Y02P 70/50 :
Manufacturing or production...
Y10S 977/707 :
having different types of n...
Y10S 977/724 :
Devices having flexible or ...