AP1 layer for TMR device
First Claim
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1. A part of a magnetic tunnel junction element, comprising:
- an AP2 layer in the form of a first layer of soft magnetic material;
an antiferromagnetic coupling layer on said AP2 layer;
on said antiferromagnetic coupling layer, a first part of an AP1 layer in the form of a second layer of soft magnetic material having a top surface whose surface roughness is less than about 2 Angstrom,physically contacting a smooth top surface of said second layer of soft magnetic material, a third layer of soft magnetic material, said second and third layers of soft magnetic material together constituting said AP1 layer; and
said AP1 and AP2 layers being magnetized in mutually antiparallel directions.
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Abstract
A TMR read head with improved voltage breakdown is formed by laying down the AP1 layer as two or more layers. Each AP1 sub-layer is exposed to a low energy plasma for a short time before the next layer is deposited. This results in a smooth surface, onto which to deposit the tunneling barrier layer, with no disruption of the surface crystal structure of the completed AP1 layer.
13 Citations
18 Claims
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1. A part of a magnetic tunnel junction element, comprising:
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an AP2 layer in the form of a first layer of soft magnetic material; an antiferromagnetic coupling layer on said AP2 layer; on said antiferromagnetic coupling layer, a first part of an AP1 layer in the form of a second layer of soft magnetic material having a top surface whose surface roughness is less than about 2 Angstrom, physically contacting a smooth top surface of said second layer of soft magnetic material, a third layer of soft magnetic material, said second and third layers of soft magnetic material together constituting said AP1 layer; and said AP1 and AP2 layers being magnetized in mutually antiparallel directions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A TMR read head, comprising:
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a seed layer on a substrate; an antiferromagnetic layer on said seed layer; on said antiferromagnetic layer, an AP2 layer in the form of a first layer of soft magnetic material; an antiferromagnetic coupling layer on said AP2 layer; on said antiferromagnetic coupling layer, a first part of an AP1 layer in the form of a second layer of soft magnetic material having a top surface whose surface roughness is less than about 2 Angstrom, physically contacting a smooth top surface of said second layer of soft magnetic material, a third layer of soft magnetic material, said second and third layers of soft magnetic material together constituting said AP1 layer; a non magnetic dielectric tunneling layer on said AP1 layer; a free layer on said tunneling layer; a capping layer on said free layer; and said AP1 and AP2 layers being magnetized in mutually antiparallel directions. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification