Electrostatic chuck and method of forming
First Claim
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1. A Coulombic electrostatic chuck comprising:
- a substrate;
a conductive layer overlying the substrate;
an arc elimination layer overlying the conductive layer, wherein the arc elimination layer comprises a normalized resistance of not less than about 104 Ohms/cm2 and an ionic conductor; and
a high-k dielectric layer overlying the arc elimination layer, wherein the high-k dielectric layer has a dielectric constant of not less than about 10 and a resistivity of not less than about 1011 Ohm-cm.
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Abstract
A Coulombic electrostatic chuck is disclosed which includes a substrate, a conductive layer overlying the substrate, and an arc elimination layer overlying the conductive layer. The electrostatic chuck further includes a high-k dielectric layer overlying the arc elimination layer, wherein the high-k dielectric layer has a dielectric constant of not less than about 10 and a resistivity of not less than about 1011 Ohm-cm.
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Citations
23 Claims
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1. A Coulombic electrostatic chuck comprising:
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a substrate; a conductive layer overlying the substrate; an arc elimination layer overlying the conductive layer, wherein the arc elimination layer comprises a normalized resistance of not less than about 104 Ohms/cm2 and an ionic conductor; and a high-k dielectric layer overlying the arc elimination layer, wherein the high-k dielectric layer has a dielectric constant of not less than about 10 and a resistivity of not less than about 1011 Ohm-cm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method of forming an electrostatic chuck comprising:
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providing a substrate; forming a conductive layer comprising a conductive material overlying the substrate; forming an arc elimination layer overlying the conductive layer, wherein the arc elimination layer comprises a normalized resistance of not less than about 104 Ohms/cm2 and an ionic conductor; and forming a high-k dielectric layer overlying the arc elimination layer, wherein the high-k dielectric layer has a dielectric constant of not less than about 10 and a resistivity of not less than about 1011 Ohm-cm. - View Dependent Claims (18, 19, 20, 21, 22)
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23. A method of forming an electronic device comprising:
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providing a Coulombic electrostatic chuck comprising (i) a substrate, (ii) a conductive layer overlying the substrate, (iii) an arc elimination layer overlying the conductive layer, wherein the arc elimination layer comprises a normalized resistance of not less than about 104 Ohms/cm2 and an ionic conductor, and (iv) a high-k dielectric layer overlying the arc elimination layer, wherein the high-k dielectric layer has a dielectric constant of not less than about 10 and a resistivity of not less than about 1011 Ohm-cm, the high-k dielectric layer defining a work surface; providing a workpiece overlying the work surface; providing a voltage across the electrostatic chuck and the workpiece to maintain the workpiece in proximity to the work surface; and processing the workpiece to form an electronic device.
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Specification