Semiconductor device with a controlled cavity and method of formation
First Claim
1. A method for forming a semiconductor device, the method comprising:
- providing a first cap wafer having a first opening extending through the first cap wafer, and a second cap wafer bonded to the first cap wafer, wherein the second cap wafer has a second opening extending through the second cap wafer, wherein the first opening is misaligned with respect to the second opening;
after the providing the first cap wafer and the second cap wafer bonded to the first cap wafer, bonding the second cap wafer to a device wafer, wherein a cavity is formed between the device wafer and the second cap wafer, and wherein the device wafer comprises at least one semiconductor device exposed to the cavity; and
after the bonding the second cap wafer to the device wafer, applying a vacuum to the first cap wafer, the second cap wafer, and the device wafer, wherein during the applying the vacuum, the method further comprising;
forming a sealing layer over the first cap wafer, wherein the sealing layer seals the first opening.
24 Assignments
0 Petitions
Accused Products
Abstract
A method for forming a semiconductor device includes providing a first cap wafer having a first opening extending through the first cap wafer, and a second cap wafer bonded to the first cap wafer, wherein the second cap wafer has a second opening extending through the second cap wafer, and wherein the first opening is misaligned with respect to the second opening. After the providing the first cap wafer and second cap wafer, the second cap wafer is bonded to a device wafer, wherein a cavity is formed between the device wafer and the second cap wafer, and wherein the device wafer comprises at least one semiconductor device in the cavity. After the bonding the second cap wafer to the device wafer, a vacuum is applied, wherein during the applying the vacuum, a sealing layer is formed over the first cap wafer, wherein the sealing layer seals the first opening.
20 Citations
20 Claims
-
1. A method for forming a semiconductor device, the method comprising:
-
providing a first cap wafer having a first opening extending through the first cap wafer, and a second cap wafer bonded to the first cap wafer, wherein the second cap wafer has a second opening extending through the second cap wafer, wherein the first opening is misaligned with respect to the second opening; after the providing the first cap wafer and the second cap wafer bonded to the first cap wafer, bonding the second cap wafer to a device wafer, wherein a cavity is formed between the device wafer and the second cap wafer, and wherein the device wafer comprises at least one semiconductor device exposed to the cavity; and after the bonding the second cap wafer to the device wafer, applying a vacuum to the first cap wafer, the second cap wafer, and the device wafer, wherein during the applying the vacuum, the method further comprising; forming a sealing layer over the first cap wafer, wherein the sealing layer seals the first opening. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. A method for forming a semiconductor device, the method comprising:
-
providing a first cap wafer having one or more openings extending through the first cap wafer, and a second cap wafer bonded to the first cap wafer, wherein the second cap wafer has one or more openings extending through the second cap wafer, wherein each of the one or more openings in the first cap wafer is misaligned with respect to each of the one or more openings in the second cap wafer; after the providing the first cap wafer and the second cap wafer bonded to the first cap wafer, bonding the second cap wafer to a device wafer, wherein a cavity is formed between the device wafer and the second cap wafer, wherein a vent path is present from the cavity through the one or more openings in the second cap wafer and through the one or more openings in the first cap wafer, and wherein the device wafer comprises at least one semiconductor device within the cavity; and after the bonding the second cap wafer to the device wafer, applying a vacuum to the vent path, wherein during the applying the vacuum, the method further comprises; forming a sealing layer over the first cap wafer, wherein the sealing layer seals each opening of the one or more openings in the first cap wafer, and wherein the first cap wafer is located between the sealing layer and the second cap wafer. - View Dependent Claims (12, 13, 14, 15, 16, 17)
-
-
18. A semiconductor device, comprising:
-
a first cap layer having one or more openings extending through the first cap layer; a second cap layer bonded to the first cap layer, the second cap layer having one or more openings extending through the second cap layer, wherein each of the one or more openings in the first cap layer are misaligned with respect to each of the one or more openings in the second cap layer; a sealing layer over the first cap layer, wherein the first cap layer is located between the sealing layer and the second cap layer, and wherein the sealing layer seals each of the one or more openings in the first cap layer; a device layer bonded to the second cap layer and comprising a MEM device; and a vacuum cavity between the device layer and the second cap layer, wherein the MEM device is in the vacuum cavity. - View Dependent Claims (19, 20)
-
Specification