Selective deposition of noble metal thin films
First Claim
1. A method for selectively depositing a thin film comprising one or more noble metals on a substrate comprising a first surface and a second surface, the method comprising:
- contacting the first and second surface of the substrate with a gaseous noble metal precursor;
providing a second reactant gas pulse to the reaction chamber; and
repeating until a thin film of a desired thickness is obtained selectively on the first surface relative to the second surface,wherein the first surface comprises a material selected from the group consisting of metals, metal nitrides, metal carbides, metal borides, conductive oxides and mixtures thereof; and
wherein the second surface comprises a material selected from the group consisting of silicon oxides, silicon nitrides, silicon oxynitrides, fluorinated silica glass (FSG), carbon doped silicon oxide (SiOC) and materials containing more than about 50% silicon oxide and wherein the temperature is below about 400°
C.
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Abstract
Processes are provided for selectively depositing thin films comprising one or more noble metals on a substrate by vapor deposition processes. In some embodiments, atomic layer deposition (ALD) processes are used to deposit a noble metal containing thin film on a high-k material, metal, metal nitride or other conductive metal compound while avoiding deposition on a lower k insulator such as silicon oxide. The ability to deposit on a first surface, such as a high-k material, while avoiding deposition on a second surface, such as a silicon oxide or silicon nitride surface, may be utilized, for example, in the formation of a gate electrode.
196 Citations
22 Claims
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1. A method for selectively depositing a thin film comprising one or more noble metals on a substrate comprising a first surface and a second surface, the method comprising:
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contacting the first and second surface of the substrate with a gaseous noble metal precursor; providing a second reactant gas pulse to the reaction chamber; and repeating until a thin film of a desired thickness is obtained selectively on the first surface relative to the second surface, wherein the first surface comprises a material selected from the group consisting of metals, metal nitrides, metal carbides, metal borides, conductive oxides and mixtures thereof; and wherein the second surface comprises a material selected from the group consisting of silicon oxides, silicon nitrides, silicon oxynitrides, fluorinated silica glass (FSG), carbon doped silicon oxide (SiOC) and materials containing more than about 50% silicon oxide and wherein the temperature is below about 400°
C. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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- 11. A method for selectively depositing a noble metal layer on a substrate comprising a first surface and a second insulating surface, the first surface comprising a high k material, metal, metal nitride or conductive metal oxide, the method comprising depositing a layer comprising a noble metal on the first surface relative to the second surface using an atomic layer deposition (ALD) process, wherein both the first surface and second surface are contacted with each of at least two reactants.
- 13. A method for selectively depositing a metal layer on a substrate comprising a first surface and a second insulating surface, the first surface comprising a high k material, metal, metal nitride or conductive metal oxide, the method comprising depositing a layer comprising a metal on the first surface relative to the second surface using an atomic layer deposition (ALD) process, wherein both the first surface and second surface are contacted with each of at least two reactants and wherein the temperature is below about 400°
Specification