Method of making a contact in a semiconductor device
First Claim
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1. A method for forming a semiconductor device, the method comprising:
- after forming a gate and a source/drain region of a transistor, forming an etch stop layer over a conductive region;
forming an insulating layer over the etch stop layer;
forming a pattern transfer layer adjacent an upper portion of the insulating layer, the pattern transfer layer being patterned in the reverse tone of a layout of recesses to be formed in the insulating layer such that the pattern transfer layer remains over regions where the recesses are to be formed;
forming a conductive mask material over the insulating layer, the conductive mask material being self-aligned with the pattern transfer layer, wherein forming a conductive mask material comprises;
depositing a layer of the conductive mask material, andperforming a chemical mechanical polish step to remove any conductive mask material from over portions of the pattern transfer layer;
removing remaining portions of the pattern transfer layer; and
forming a contact hole having continuously vertical sidewalls by etching recesses in the insulating layer using the conductive mask material as a mask.
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Abstract
To form a semiconductor device, an insulating layer is formed over a conductive region and a pattern transfer layer is formed over the insulating layer. The pattern transfer layer is patterned in the reverse tone of a layout of recesses to be formed in the insulating layer such that the pattern transfer layer remains over regions where the recesses are to be formed. A mask material is formed over the insulating layer and is aligned with the pattern transfer layer. Remaining portions of the pattern transfer layer are removed and recesses are etched in the insulating layer using the mask material as a mask.
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Citations
22 Claims
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1. A method for forming a semiconductor device, the method comprising:
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after forming a gate and a source/drain region of a transistor, forming an etch stop layer over a conductive region; forming an insulating layer over the etch stop layer; forming a pattern transfer layer adjacent an upper portion of the insulating layer, the pattern transfer layer being patterned in the reverse tone of a layout of recesses to be formed in the insulating layer such that the pattern transfer layer remains over regions where the recesses are to be formed; forming a conductive mask material over the insulating layer, the conductive mask material being self-aligned with the pattern transfer layer, wherein forming a conductive mask material comprises; depositing a layer of the conductive mask material, and performing a chemical mechanical polish step to remove any conductive mask material from over portions of the pattern transfer layer; removing remaining portions of the pattern transfer layer; and forming a contact hole having continuously vertical sidewalls by etching recesses in the insulating layer using the conductive mask material as a mask. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of forming a semiconductor device, the method comprising:
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forming a transistor having a gate and a source/drain region in a semiconductor body; forming an insulating layer over the semiconductor body including over the transistor; depositing a pattern transfer layer over the insulating layer; depositing a antireflective coating (ARC) layer over the pattern transfer layer; forming a resist layer over the ARC layer; patterning the resist layer and the ARC layer to expose portions of the pattern transfer layer; removing the exposed portions of the pattern transfer layer to expose portions of the insulating layer; forming a conductive masking layer over the exposed portions of the insulating layer; removing remaining portions of the pattern transfer layer; etching a contact hole in the insulating layer using the conductive masking layer as a mask; filling the contact hole with a conductor, the conductor being electrically coupled to the transistor, wherein filling the contact hole comprises forming a butted contact that electrically couples both the gate and the source/drain region; and removing the conductive masking layer, wherein removing the conductive masking layer comprises performing a chemical mechanical polish or a reactive ion etch. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
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20. A method of forming a semiconductor device, the method comprising:
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forming a transistor having a gate and a source/drain region in a semiconductor body; forming an etch stop layer over the semiconductor body including over the transistor; forming a blanket insulating layer over the etch stop layer; depositing a pattern transfer layer over the insulating layer; depositing a antireflective coating (ARC) layer over the pattern transfer layer; forming a resist layer over the ARC layer; patterning the resist layer and the ARC layer to expose portions of the pattern transfer layer; removing the exposed portions of the pattern transfer layer to expose portions of the insulating layer; forming a conductive masking layer over the exposed portions of the insulating layer; removing remaining portions of the pattern transfer layer; etching a contact hole in the blanket insulating layer using the conductive masking layer as a mask; filling the contact hole with a conductor, the conductor being electrically coupled to the transistor; and removing the conductive masking layer, wherein removing the conductive masking layer comprises performing a chemical mechanical polish or a reactive ion etch. - View Dependent Claims (21, 22)
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Specification