Semiconductor light emitting device with light extraction structures
First Claim
Patent Images
1. A device comprising:
- a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region;
a reflective metal contact disposed on a bottom side of the semiconductor structure and electrically connected to the p-type region;
a material disposed between at least a portion of the reflective metal contact and the p-type region, wherein a difference between an index of refraction of the material and an index of refraction of the p-type region is at least 0.4;
wherein;
at least a portion of a top side of the semiconductor structure is textured; and
a distance between the textured portion of the top side of the semiconductor structure and the reflective metal contact is less than 5 μ
m.
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Abstract
Structures are incorporated into a semiconductor light emitting device which may increase the extraction of light emitted at glancing incidence angles. In some embodiments, the device includes a low index material that directs light away from the metal contacts by total internal reflection. In some embodiments, the device includes extraction features such as cavities in the semiconductor structure which may extract glancing angle light directly, or direct the glancing angle light into smaller incidence angles which are more easily extracted from the device.
52 Citations
11 Claims
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1. A device comprising:
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a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region; a reflective metal contact disposed on a bottom side of the semiconductor structure and electrically connected to the p-type region; a material disposed between at least a portion of the reflective metal contact and the p-type region, wherein a difference between an index of refraction of the material and an index of refraction of the p-type region is at least 0.4; wherein; at least a portion of a top side of the semiconductor structure is textured; and a distance between the textured portion of the top side of the semiconductor structure and the reflective metal contact is less than 5 μ
m. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification