Nitride semiconductor light emitting element
First Claim
1. A nitride semiconductor light emitting element comprising:
- a supporting substrate;
a first Bragg reflector made of a dielectric multilayer film;
a stacked layer body of nitride semiconductor disposed on an opposite side of the first Bragg reflector from the supporting substrate, the stacked layer body having a first conductive-type layer, a light emitting layer, and a second conductive-type layer stacked in this order;
a second Bragg reflector made of a dielectric multilayer film and facing the first Bragg reflector across the stacked layer body; and
a first electrode electrically connected to the first conductive-type layer with the first electrode being disposed between the supporting substrate and the first Bragg reflector such that the first electrode at least partially overlaps the first Bragg reflector when viewed in a stacking direction of the stacked layer body.
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Accused Products
Abstract
A method of manufacturing a nitride semiconductor light emitting element includes: forming a stacked layer body of a nitride semiconductor having a second conductive-type layer, a light emitting layer, and a first conductive-type layer stacked on a growth substrate in this order; forming a first Bragg reflector made of a dielectric multilayer film above the first conductive-type layer; forming a first electrode over the first Bragg reflector with the first electrode being electrically connected to the first conductive-type layer; bonding the stacked layer body to a supporting substrate via the first Bragg reflector and the first electrode; removing the growth substrate from the stacked layer body to expose the second conductive-type layer; and forming over the exposed second conductive-type layer a second electrode and a second Bragg reflector made of a dielectric multilayer film so that the second Bragg reflector faces the first Bragg reflector across the stacked layer body.
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Citations
20 Claims
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1. A nitride semiconductor light emitting element comprising:
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a supporting substrate; a first Bragg reflector made of a dielectric multilayer film; a stacked layer body of nitride semiconductor disposed on an opposite side of the first Bragg reflector from the supporting substrate, the stacked layer body having a first conductive-type layer, a light emitting layer, and a second conductive-type layer stacked in this order; a second Bragg reflector made of a dielectric multilayer film and facing the first Bragg reflector across the stacked layer body; and a first electrode electrically connected to the first conductive-type layer with the first electrode being disposed between the supporting substrate and the first Bragg reflector such that the first electrode at least partially overlaps the first Bragg reflector when viewed in a stacking direction of the stacked layer body. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification