Semiconductor device
First Claim
1. A semiconductor device capable of performing data communication in a noncontact manner, the semiconductor device comprising:
- an element group including a transistor;
an antenna electrically connected to the element group; and
a first protective layer and a second protective layer wherein each of the first protective layer and the second protective layer includes an organic resin material,wherein the element group and the antenna are sealed between the first protective layer and the second protective layer, andwherein a thickness of the element group is 5 μ
m or less.
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Accused Products
Abstract
The invention provides a semiconductor device that power is stabilized by suppressing power consumption as much as possible. The semiconductor device of the invention includes a logic portion and a memory portion each including a plurality of transistors, a detecting portion for detecting one or both of operation frequencies of the logic portion and the memory portion, a Vth control for supplying a Vth control signal to one or both of the logic portion and the memory portion, and an antenna. Each of the plurality of transistors has a first gate electrode which is input with a logic signal, a second gate electrode which is input with the Vth control signal, and a semiconductor film such that the second gate electrode, the semiconductor film, and the first gate electrode are provided in this order from the bottom.
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Citations
36 Claims
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1. A semiconductor device capable of performing data communication in a noncontact manner, the semiconductor device comprising:
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an element group including a transistor; an antenna electrically connected to the element group; and a first protective layer and a second protective layer wherein each of the first protective layer and the second protective layer includes an organic resin material, wherein the element group and the antenna are sealed between the first protective layer and the second protective layer, and wherein a thickness of the element group is 5 μ
m or less. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device capable of performing data communication in a noncontact manner, the semiconductor device comprising:
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an element group having a logic portion and a memory portion; a detecting portion for detecting at least one of an operation frequency of the logic portion and an operation frequency of the memory portion; a Vth control portion for supplying a Vth control signal to at least one of the logic portion and the memory portion depending on a detection result from the detecting portion; an antenna electrically connected to the element group; and a first protective layer and a second protective layer wherein each of the first protective layer and the second protective layer includes an organic resin material, wherein the element group and the antenna are sealed between the first protective layer and the second protective layer, wherein each of the logic portion and the memory portion includes a transistor, and wherein a thickness of the element group is 5 μ
m or less. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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16. A semiconductor device capable of performing data communication in a noncontact manner, the semiconductor device comprising:
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an element group having a logic portion and a memory portion; a detecting portion for detecting at least one of an operation frequency of the logic portion and an operation frequency of the memory portion; a Vth control portion for supplying a Vth control signal to at least one of the logic portion and the memory portion depending on a detection result from the detecting portion; an antenna electrically connected to the element group; and a first protective layer and a second protective layer wherein each of the first protective layer and the second protective layer includes an organic resin material, wherein the element group and the antenna are sealed between the first protective layer and the second protective layer, wherein each of the logic portion and the memory portion includes a transistor, wherein the logic portion includes a timing control, an instruction decoder, a register array, an address logic and buffer, a data bus interface, an Arithmetic Logic Unit, and an instruction register, and wherein a thickness of the element group is 5 μ
m or less. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24)
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25. A semiconductor device capable of performing data communication in a noncontact manner, the semiconductor device comprising:
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a circuit including a transistor, the transistor including a gate electrode, a gate insulating film and an active layer; an antenna electrically connected to the circuit; and a first protective layer and a second protective layer wherein each of the first protective layer and the second protective layer includes an organic resin material, wherein the circuit and the antenna are sealed between the first protective layer and the second protective layer, and wherein a thickness of the active layer is 20 to 200 nm. - View Dependent Claims (26, 27, 28, 29, 30)
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31. A semiconductor device capable of performing data communication in a noncontact manner, the semiconductor device comprising:
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a circuit having a logic portion and a memory portion; a detecting portion for detecting at least one of an operation frequency of the logic portion and an operation frequency of the memory portion; a Vth control portion for supplying a Vth control signal to at least one of the logic portion and the memory portion depending on a detection result from the detecting portion; an antenna electrically connected to the circuit; and a first protective layer and a second protective layer wherein each of the first protective layer and the second protective layer includes an organic resin material, wherein the circuit and the antenna are sealed between the first protective layer and the second protective layer, wherein each of the logic portion and the memory portion includes a transistor, the transistor including a gate electrode, a gate insulating film and an active layer, and wherein a thickness of the active layer is 20 to 200 nm. - View Dependent Claims (32, 33, 34, 35, 36)
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Specification