Calculation system for inverse masks

• US 7,987,434 B2
• Filed: 01/23/2009
• Issued: 07/26/2011
• Est. Priority Date: 02/28/2005
• Status: Expired due to Fees

• Current Assignee: Mentor Graphics Corporation (Siemens AG)
• Original Assignee: Mentor Graphics Corporation (Siemens AG)
• Inventors: Granik, Yuri, Sakajiri, Kyohei
• Primary Examiner(s): Garbowski; Leigh Marie
• Application Number:
  US12/359,174
• Publication Number:
  US 20090125869A1
• Time in Patent Office: 914 Days
• Field of Search: None
• US Class Current: 716/50
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Abstract

A system for calculating mask data to create a desired layout pattern on a wafer reads all or a portion of a desired layout pattern. Mask data having pixels with transmission values is defined along with corresponding optimal mask data pixel transmission values. An objective function is defined that compares image intensities as would be generated on a wafer with an optimal image intensity at a point corresponding to a pixel. The objective function is minimized to determine the transmission values of the mask pixels that will reproduce the desired layout pattern on a wafer.

Claims

1. A computer system including one or more processors that are configured to execute a sequence of program instructions for computing mask data for the creation of one or more photolithographic masks that print a desired layout pattern on a wafer with a photolithographic printing system that is designed to print features at a predefined tightest pitch pattern, wherein the instructions cause the computer to:

read all or a portion of a desired layout pattern;

define a set of mask data having a number of pixels that are assigned a transmission value;

determine an objective function that compares a simulation of the image intensity on a wafer to an ideal image intensity;

define a set of ideal image intensities from the desired layout pattern, wherein the maximum ideal image intensity is selected to be substantially equal to the maximum image intensity determined from a test image of features at the tightest pitch pattern produced by the photolithographic imaging system; and

minimize the objective function to determine the transmission values of the pixels in the mask data that will produce the desired layout on a wafer.

2. The computer system recited in claim 1, wherein one or more penalty functions are used to minimize the objective function, and wherein the one or more penalty functions promote solutions of the objective function having a desired style of resolution enhancement technique.

3. The computer system recited in claim 2, wherein the desired style of resolution enhancement technique includes assist features.

4. The computer system recited in claim 2, wherein the desired style of resolution enhancement technique includes phase shifters.

5. The computer system recited in claim 2, wherein the desired style of resolution enhancement technique includes partial phase shifters.

6. The computer system recited in claim 2, wherein the desired style of resolution enhancement technique includes mask features with grayscale transmission value.

7. The computer system recited in claim 2, wherein the desired style of resolution enhancement technique includes mask features with multiple transmission values.

8. The computer system recited in claim 2, wherein the desired style of resolution enhancement technique includes attenuated phase shifters.

9. The computer system recited in claim 1, wherein one or more penalty functions are used to minimize the objective function, and wherein at least one of the one or more penalty functions are encoded as polynomials having zeroes at desired pixel transmission characteristics.

10. The computer system recited in claim 1, the instructions further causing the computer system to optimizing the objective function using a gradient decent.

11. The computer system recited in claim 10, the instructions further causing the computer system to calculate the gradient of the objective function using convolution or cross-correlation.

12. The computer system recited in claim 1, the instructions further causing the computer system to define mask data for a number of partially overlapping frames and to combine the mask data determined for the frames for use in creating a mask.

13. The computer system recited in claim 1, the instructions further causing the computer system to weight the objective function with a weight defined for each mask pixel, wherein the weights are larger for pixels near the edges of features in the ideal image and smaller for other pixels.

14. The computer system recited in claim 1, the instructions further causing the computer system to weight the objective function with a weight defined for each mask pixel, wherein the weights are smaller for pixels near the ends of lines in the ideal image and larger for other pixels.

15. The computer system recited in claim 1, further comprising including a penalty term in the objective function to steer the minimization of the objective function to a solution that can be manufactured on a mask.

16. The computer system recited in claim 15, wherein the penalty term is defined in the objective function as a polynomial having zeroes at desired pixel transmission values.

17. The computer system recited in claim 15, wherein the maximum image intensity determined from the test image is made by measuring image intensities on a test wafer.

18. The computer system recited in claim 15, wherein the maximum image intensity determined from the test image is made by simulating the printing of the test image.