Methods of fabricating metal oxide or metal oxynitride TFTs using wet process for source-drain metal etch

• US 7,988,470 B2
• Filed: 09/17/2010
• Issued: 08/02/2011
• Est. Priority Date: 09/24/2009
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Ye, Yan
• Primary Examiner(s): Lee; Hsien Ming
• Application Number:
  US12/884,572
• Publication Number:
  US 20110070691A1
• Time in Patent Office: 319 Days
• Field of Search: 438/149, 438/290, 438/479, 438/597, 438/625, 438/642, 438/652, 438/658
• US Class Current: 439/149
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

The present invention generally relates to thin film transistors (TFTs) and methods of making TFTs. The active channel of the TFT may comprise one or more metals selected from the group consisting of zinc, gallium, tin, indium, and cadmium. The active channel may also comprise nitrogen and oxygen. To protect the active channel during source-drain electrode patterning, an etch stop layer may be deposited over the active layer. The etch stop layer prevents the active channel from being exposed to the plasma used to define the source and drain electrodes. The etch stop layer and the source and drain electrodes may be used as a mask when wet etching the active material layer that is used for the active channel.

Claims

1. A thin film transistor formation method, comprising:

depositing and patterning a gate electrode over a substrate using a first mask;

depositing a gate dielectric layer over the gate electrode;

depositing a semiconductive active layer over the gate dielectric layer, the semiconductive active layer comprising oxygen, nitrogen, and one or more elements selected from the group consisting of zinc, indium, cadmium, gallium, and tin;

depositing an etch stop layer over the semiconductive active layer;

forming a second mask over the etch stop layer;

etching the etch stop layer to form a patterned etch stop layer of a device portion of the thin film transistor and remove the etch stop layer from a gate contact portion of the thin film transistor to expose the semiconductive active layer;

removing the second mask to expose the patterned etch stop layer;

depositing a metal layer over the patterned etch stop layer and the semiconductive active layer;

forming a third mask over the metal layer at the device portion of the thin film transistor;

etching the metal layer to define a source electrode and a drain electrode at the device portion and remove the metal layer from the gate contact portion;

removing the third mask;

etching the semiconductive active layer using the source electrode and the drain electrode as a mask to remove the semiconductive active layer from the gate contact portion and expose the gate dielectric layer in the gate contact portion; and

etching the gate dielectric layer using a fourth mask to expose a gate contact in the gate contact portion.

2. The method of claim 1, wherein the metal layer and the semiconductive active layer are etched using a plasma etching process.

3. The method of claim 2, wherein the etching the semiconductive active layer comprises utilizing the source electrode, the drain electrode and the patterned etch stop layer collectively as a mask without depositing and removing a fifth mask.

4. The method of claim 1, wherein the semiconductive active layer is etched using a wet etching process and the metal layer is etched using a plasma etching process.

5. The method of claim 1, wherein the semiconductive active layer and the metal layer are etched using a wet etching process.

8. The method of claim 3, wherein the semiconductive active layer is etched using a wet etching process and the metal layer is etched using a plasma etching process.

9. The method of claim 3, wherein the semiconductive active layer and the metal layer are etched using a wet etching process.

6. A thin film transistor formation method, comprising:

depositing and patterning a gate electrode over a substrate using a first mask;

depositing a gate dielectric layer over the gate electrode;

depositing a semiconductive active layer over the gate dielectric layer, the semiconductive active layer comprising oxygen, nitrogen, and one or more elements selected from the group consisting of zinc, indium, cadmium, gallium, and tin;

patterning the semiconductive active layer using a second mask to form an active channel in a device portion of the thin film transistor and remove the semiconductive active layer from a gate contact portion of the thin film transistor and expose the gate dielectric layer in the gate contact portion;

depositing an etch stop layer over the active channel in the device portion and over the gate dielectric layer in the gate contact portion;

etching the etch stop layer using a third mask to form a patterned etch stop layer in the device portion and etch through the etch stop layer and the gate dielectric layer in the gate contact portion to expose a gate contact in the gate contact portion;

depositing a metal layer over the patterned etch stop layer, the semiconductive active layer, and the gate contact portion; and

etching the metal layer with a fourth mask to define a source electrode and a drain electrode at the device portion and form a metal contact at the gate contact portion.

7. The method of claim 6, wherein the metal layer and the semiconductive active layer are etched using a plasma etching process.

10. A thin film transistor formation method, comprising:

depositing and patterning a gate electrode over a substrate using a first mask;

depositing a gate dielectric layer over the gate electrode;

depositing a semiconductive active layer over the gate dielectric layer, the semiconductive active layer comprising oxygen, nitrogen, and one or more elements selected from the group consisting of zinc, indium, cadmium, gallium, and tin;

depositing an etch stop layer over the semiconductive active layer;

etching the etch stop layer using a second mask to form a patterned etch stop layer of a device portion of the thin film transistor and remove the etch stop layer from a gate contact portion of the thin film transistor to expose the semiconductive active layer;

etching the semiconductive active layer using the patterned etch stop layer as a mask to expose the gate dielectric layer and form an active channel in the device portion;

depositing a passivation layer over the device portion and the gate contact portion;

etching through the passivation layer and the patterned etch stop layer using a third mask to expose the active channel in the device portion and etching through the passivation layer and gate dielectric layer in the gate contact portion to expose the gate electrode;

depositing a metal layer over the patterned etch stop layer and the active channel layer; and

etching the metal layer using a forth mask to define a source electrode and a drain electrode at the device portion and a metal contact in the gate contact portion.

11. The method of claim 10, wherein the metal layer and the semiconductive active layer are etched using a plasma etching process.

12. The method of claim 10, wherein the semiconductive active layer is etched using a wet etching process and the metal layer is etched using a plasma etching process.

13. The method of claim 10, wherein the semiconductive active layer and the metal layer are etched using a wet etching process.

14. A thin film transistor formation method, comprising:

depositing and patterning a gate electrode over a substrate using a first mask;

depositing a gate dielectric layer over the gate electrode;

depositing a semiconductive active layer over the gate dielectric layer, the semiconductive active layer comprising oxygen, nitrogen, and one or more elements selected from the group consisting of zinc, indium, cadmium, gallium, and tin;

depositing first metal layer having a first composition over the semiconductor active layer;

depositing a second metal layer having a second composition different than the first composition over the first metal layer;

etching the second metal layer using a second mask to form one or more etch stops over a device portion of the thin film transistor while removing the second metal layer from a gate contact portion of the thin film transistor;

forming a third mask over the etched second metal layer;

etching the first metal layer to remove the first metal layer from the gate contact portion and to form an etched first metal layer over the device portion;

etching the semiconductive active layer to form an active channel in the device portion and to remove the semiconductive active layer from the gate contact portion; and

etching the etched first metal layer to form source and drain electrodes.

15. The method of claim 14, wherein the etching the second metal layer comprises wet etching.

16. The method of claim 15, wherein etching the first metal layer comprises plasma etching.

17. The method of claim 16, wherein etching the semiconductive active layer comprises wet etching.

18. The method of claim 17, wherein etching the first metal layer comprises plasma etching.

19. The method of claim 18, wherein the semiconductive active layer is deposited by applying a DC electrical bias to a metallic sputtering target comprising the one or more elements selected from the group consisting of zinc, indium, cadmium, gallium, and tin, and introducing an oxygen containing gas and a nitrogen containing gas.

20. The method of claim 19, wherein the oxygen containing gas and the nitrogen containing gas are separate gases, wherein the metallic sputtering target comprises a dopant selected from the group consisting of Al, Sn, Ga, Ca, Si, Ti, Cu, Ge, In, Ni, Mn, Cr, V, Mg, Si_xN_y, Al_xO_y, SiC, and combinations thereof, and wherein the semiconductive active layer comprises a dopant selected from the group consisting of Al, Sn, Ga, Ca, Si, Ti, Cu, Ge, In, Ni, Mn, Cr, V, Mg, Si_xN_y, Al_xO_y, SiC, and combinations thereof.