Adhesion of membranes on nitride layer in electrochemical sensors by attachment to underlying oxide layer
First Claim
1. A structure in a solid-state electrochemical sensor, comprising:
- a substrate;
an oxide layer disposed on the substrate;
an electrically conductive structure disposed on the oxide layer;
a nitride layer disposed on the oxide layer, the nitride layer having a window therein adjacent to the electrically conducting structure;
an electrode disposed at said window of the nitride layer, the electrode being electrically coupled to the electrically conductive structure; and
a membrane disposed on the nitride layer, the membrane covering the electrode,wherein the nitride layer comprises at least one opening therein extending to the oxide layer, each said opening exposing an oxide surface region of the oxide layer, such that the membrane extends through said opening and contacts said oxide surface region.
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Accused Products
Abstract
An electrochemical sensor is provided that exhibits improved adhesion of the membrane to the nitride layer used as an insulating layer in silicon- or silicon-oxide-based electrochemical sensing devices. The sensing devices include a substrate, an oxide disposed on the substrate, a nitride disposed on the oxide, an electrically conductive structure disposed on the oxide layer, and an electrode disposed on the oxide layer and electrically coupled to the electrically conductive structure. At least one opening is formed in the nitride layer to form at least one adhesion trench that exposes a surface region of an oxide layer underlying the nitride layer. The membrane covers the electrode, and contacts the oxide surface regions exposed by the adhesion trenches. The contact between the membrane and the oxide surface region provides for improved adhesion of the membrane to the electrochemical sensing device.
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Citations
27 Claims
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1. A structure in a solid-state electrochemical sensor, comprising:
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a substrate; an oxide layer disposed on the substrate; an electrically conductive structure disposed on the oxide layer; a nitride layer disposed on the oxide layer, the nitride layer having a window therein adjacent to the electrically conducting structure; an electrode disposed at said window of the nitride layer, the electrode being electrically coupled to the electrically conductive structure; and a membrane disposed on the nitride layer, the membrane covering the electrode, wherein the nitride layer comprises at least one opening therein extending to the oxide layer, each said opening exposing an oxide surface region of the oxide layer, such that the membrane extends through said opening and contacts said oxide surface region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method of making a structure in a solid-state electrochemical sensor, comprising;
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forming an electrically conductive structure on an oxide layer, the oxide layer being disposed on a substrate; forming a nitride layer on said oxide layer, the nitride layer having a window therein adjacent to the electrically conducting structure, wherein the nitride layer comprises at least one opening therein extending to the oxide layer, each said opening exposing an oxide surface region of the oxide layer; forming an electrode at the window of the nitride layer, said electrode being electrically coupled to the electrically conductive structure; and disposing a membrane on the nitride layer, the membrane covering the electrode, such that the membrane extends through said at least one opening and contacts said oxide surface region. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27)
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Specification