Adhesion of membranes on nitride layer in electrochemical sensors by attachment to underlying oxide layer

• US 7,988,838 B2
• Filed: 11/01/2006
• Issued: 08/02/2011
• Est. Priority Date: 11/01/2005
• Status: Active Grant

• Current Assignee: GE Analytical Instruments, Inc. (General Electric Company)
• Original Assignee: GE Analytical Instruments, Inc. (General Electric Company)
• Inventors: Dipiazza, Frank, Martin, Glenn B.
• Primary Examiner(s): Olsen; Kaj K
• Assistant Examiner(s): Salzman; Kourtney R
• Application Number:
  US12/092,299
• Publication Number:
  US 20080308418A1
• Time in Patent Office: 1,735 Days
• Field of Search: 20440301-40315, 204/409, 204/410, 204415-419, 204/421, 204/423, 205/777.5, 205/778
• US Class Current: 204/403.06
• CPC Class Codes: G01N 27/333 Ion-selective electrodes or membranes glass electrodes G01N27/36

Abstract

An electrochemical sensor is provided that exhibits improved adhesion of the membrane to the nitride layer used as an insulating layer in silicon- or silicon-oxide-based electrochemical sensing devices. The sensing devices include a substrate, an oxide disposed on the substrate, a nitride disposed on the oxide, an electrically conductive structure disposed on the oxide layer, and an electrode disposed on the oxide layer and electrically coupled to the electrically conductive structure. At least one opening is formed in the nitride layer to form at least one adhesion trench that exposes a surface region of an oxide layer underlying the nitride layer. The membrane covers the electrode, and contacts the oxide surface regions exposed by the adhesion trenches. The contact between the membrane and the oxide surface region provides for improved adhesion of the membrane to the electrochemical sensing device.

Claims

1. A structure in a solid-state electrochemical sensor, comprising:

a substrate;

an oxide layer disposed on the substrate;

an electrically conductive structure disposed on the oxide layer;

a nitride layer disposed on the oxide layer, the nitride layer having a window therein adjacent to the electrically conducting structure;

an electrode disposed at said window of the nitride layer, the electrode being electrically coupled to the electrically conductive structure; and

a membrane disposed on the nitride layer, the membrane covering the electrode,

wherein the nitride layer comprises at least one opening therein extending to the oxide layer, each said opening exposing an oxide surface region of the oxide layer, such that the membrane extends through said opening and contacts said oxide surface region.

2. The structure in a solid-state electrochemical sensor of claim 1, wherein the membrane is an ion-selective membrane.

3. The structure in a solid-state electrochemical sensor of claim 1, wherein the membrane is a dialysis membrane.

4. The structure in a solid-state electrochemical sensor of claim 1, wherein the membrane comprises two or more layers of materials.

5. The structure in a solid-state electrochemical sensor of claim 4, wherein at least one of the layers of the membrane comprises ionophores, enzymes, antibodies or functional groups trapped therein.

6. The structure in a solid-state electrochemical sensor of claim 1, wherein the oxide surface region comprises an adhesion promoter.

7. The structure in a solid-state electrochemical sensor of claim 6, wherein the adhesion promoter comprises a silane.

8. The structure in a solid-state electrochemical sensor of claim 6, wherein the adhesion promoter comprises a silanol.

9. The structure in a solid-state electrochemical sensor of claim 1, wherein an oxide is disposed on the nitride layer.

10. The structure in a solid-state electrochemical sensor of claim 1, wherein the width of the opening ranges from about 10 to about 300 microns.

11. The structure in a solid-state electrochemical sensor of claim 1, wherein the at least one opening forms at least one adhesion trench in the sensor, and wherein the adhesion trench extends to a depth of about 50 to about 2000 angstroms.

12. The structure in a solid-state electrochemical sensor of claim 1, wherein the at least one opening forms an adhesion trench in the sensor, and wherein the lateral width of the adhesion trench on the structure ranges from about 200 to 1000 microns.

13. The structure in a solid-state electrochemical sensor of claim 1, wherein at least one of the openings is substantially circular, hexagonal, rectangular or oval in shape.

14. The structure in a solid-state electrochemical sensor of claim 1, wherein the electrode is a silver/silver chloride electrode, a silver/silver bromide electrode, a silver/silver iodide electrode, a platinum electrode, or an iridium oxide electrode.

15. The structure in a solid-state electrochemical sensor of claim 1, wherein the membrane contacts both the nitride layer and the oxide surface region.

16. The structure in a solid-state electrochemical sensor of claim 1, wherein a second oxide layer is disposed between the nitride layer and the membrane.

17. The structure in a solid-state electrochemical sensor of claim 16, wherein the second oxide layer comprises an adhesion promoter.

18. The structure in a solid-state electrochemical sensor of claim 17, wherein the adhesion promoter comprises a silane.

19. The structure in a solid-state electrochemical sensor of claim 17, wherein the adhesion promoter comprises a silanol.

20. A method of making a structure in a solid-state electrochemical sensor, comprising;

forming an electrically conductive structure on an oxide layer, the oxide layer being disposed on a substrate;

forming a nitride layer on said oxide layer, the nitride layer having a window therein adjacent to the electrically conducting structure, wherein the nitride layer comprises at least one opening therein extending to the oxide layer, each said opening exposing an oxide surface region of the oxide layer;

forming an electrode at the window of the nitride layer, said electrode being electrically coupled to the electrically conductive structure; and

disposing a membrane on the nitride layer, the membrane covering the electrode, such that the membrane extends through said at least one opening and contacts said oxide surface region.

21. The method of claim 20, further comprising the step of providing an adhesion promoter at the oxide surface region.

22. The method of claim 21, wherein the adhesion promoter comprises a silane.

23. The method of claim 21, wherein the adhesion promoter comprises a silanol.

24. The method of claim 20, wherein the membrane contacts both the nitride layer and the oxide surface region.

25. The method of claim 20, wherein the membrane is an ion-selective membrane.

26. The method of claim 20, further comprising the step of disposing a second oxide layer is between the nitride layer and the membrane.

27. The method of claim 20, further comprising the step of providing an adhesion promoter at the second oxide layer.