Barrier layer for thick film dielectric electroluminescent displays

• US 7,989,088 B2
• Filed: 12/15/2003
• Issued: 08/02/2011
• Est. Priority Date: 12/20/2002
• Status: Expired due to Fees

• Current Assignee: iFire IP Corporation, Sanyo Electric Company Limited (Panasonic Holdings Corporation)
• Original Assignee: iFire IP Corporation, Sanyo Electric Company Limited (Panasonic Holdings Corporation)
• Inventors: Zhang, Hui, Seale, Daniel J., Wu, Li, Yufeng, Ye, William, M. Smy, Maizhi, Yang, Hamada, Hiroki, Yoshida, Isao
• Primary Examiner(s): Ortiz; Angela
• Assistant Examiner(s): Thompson; Camie S
• Application Number:
  US10/736,368
• Publication Number:
  US 20040170865A1
• Time in Patent Office: 2,787 Days
• Field of Search: 313/504, 313/506, 428/690, 428/917
• US Class Current: 428/690
• CPC Class Codes: C09K 11/7745 with zinc or cadmium
• CPC Class Codes: H05B 33/10 Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
• CPC Class Codes: H05B 33/14 characterised by the chemical or physical composition or the arrangement of the electroluminescent material , or by the simultaneous addition of the electroluminescent material in or onto the light source
• CPC Class Codes: H05B 33/22 characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
• CPC Class Codes: Y10S 428/917 Electroluminescent
• CPC Class Codes: Y10T 428/26 Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension

Abstract

A novel sub-structure of a thick film dielectric electroluminescent display and a thick film dielectric electroluminescent display incorporating the same is provided. The sub-structure comprises a barrier layer between a substrate and a thick film dielectric layer. The barrier layer is chemically inert with respect to the substrate and the thick film dielectric layer and the barrier layer inhibits diffusion of at least one chemical species therethrough. This sub-structure results in a higher capacitance for the thick dielectric layer, which provides higher display luminance and a reduced tendency for dielectric breakdown of the thick dielectric layer. The barrier layer permits for lower cost substrates, such as glass, to be used.

Claims

1. A sub-structure of a thick film dielectric electroluminescent display, the sub-structure comprising, in sequence:

a substrate;

a barrier layer;

a lower electrode; and

a thick film dielectric layer,

the barrier layer being chemically inert with respect to the substrate and the lower electrode, the barrier layer inhibiting diffusion of at least one chemical species therethrough.

2. The sub-structure of claim 1 wherein the barrier layer is adjacent both the substrate and the lower electrode layer.

3. The sub-structure of claim 1 wherein the barrier layer is adhesively joined to both the substrate and the lower electrode layer.

4. The sub-structure of claim 1 wherein the barrier layer has physical properties such that internal stress is minimized during fabrication of the sub-structure and the barrier layer and other layers of the sub-structure and display remain substantially crack-free.

5. The sub-structure of claim 4 wherein the barrier layer has a thermal expansion coefficient that matches the thermal expansion coefficients of the other layers to minimize internal stress.

6. The sub-structure of claim 4 wherein the barrier layer has a thermal expansion coefficient of about 4×

10<sup>−

6</sup>/°

C. to about 10×

10<sup>−

6</sup>/°

C.

7. The sub-structure of claim 1 wherein the barrier layer comprises a material selected from the group consisting of alumina, aluminum nitride, aluminum fluoride, and barium titanate.

8. The sub-structure of claim 1 wherein the barrier layer has a thickness of at least about 50 nanometers.

9. The sub-structure of claim 1 wherein the barrier layer has a thickness of at least about 100 nanometers.

10. The sub-structure of claim 1 wherein the thick film dielectric layer has a relative dielectric constant greater than about 50.

11. The sub-structure of claim 1 wherein the thick film dielectric layer has a relative dielectric constant of at least about 1000.

12. The sub-structure of claim 1 wherein the thick film dielectric layer is a composite thick film dielectric layer.

13. A thick film dielectric electroluminescent display comprising the sub-structure of claim 12.

14. The sub-structure of claim 1 further comprises, in sequence, a smoothing layer adjacent the thick film dielectric layer.

15. The sub-structure of claim 1 wherein the at least one chemical species is selected from the group consisting of alkali metals and alkaline earth metals.

16. The sub-structure of claim 1 wherein the substrate is a glass substrate that comprises elements selected from the group consisting of Group IA (alkali metals), Group IIA (alkaline earth metals), silicon and aluminum.

17. The sub-structure of claim 1 wherein the substrate is selected from the group consisting of, ceramics, metal ceramic composites, glass materials, and glass ceramic materials.

18. The sub-structure of claim 1 wherein the substrate is a glass substrate comprising at least one chemical species selected from the group consisting of silica, alumina, alkali metal oxides, alkaline earth oxides and mixtures thereof.

19. The sub-structure of claim 1, wherein an other barrier layer is interposed between the lower electrode and the thick film dielectric layer and the other barrier layer is chemically inert with respect to the lower electrode and the thick film dielectric layer and inhibits diffusion of at least one chemical species therethrough.

20. The sub-structure of claim 19 wherein the other barrier layer is selected from the group consisting of a layer of a material having a relative dielectric constant greater than about 50 and a layer of material having a lower relative dielectric constant and a thickness of at most about 50 nm.

21. The sub-structure of claim 19 wherein the other barrier layer comprises crystalline barium titanate.

22. The sub-structure of claim 19 wherein the other barrier layer has a thickness of at most about 50 nm and comprises a material selected from the group consisting of alumina, aluminum nitride, aluminum fluoride and barium titanate.

23. The sub-structure of claim 22 wherein the other barrier layer has a thickness of about 20 nm to about 50 nm.

24. A thick film dielectric electroluminescent display comprising the sub-structure of claim 1.

25. A sub-structure of a thick film dielectric electroluminescent display, the sub-structure comprising, in sequence:

a substrate;

a lower electrode;

a barrier layer; and

a thick film dielectric layer,

the barrier layer being chemically inert with respect to the lower electrode and the thick film dielectric layer, the barrier layer inhibiting diffusion of at least one chemical species therethrough.

26. The sub-structure of claim 25 wherein the barrier layer is selected from the group consisting of a layer of a material having a relative dielectric constant greater than about 50 and a layer of material having a lower relative dielectric constant and a thickness of at most about 50 nm.

27. The sub-structure of claim 25 wherein the barrier layer comprises crystalline barium titanate.

28. The sub-structure of claim 25 wherein the barrier layer has a thickness of at most about 50 nm and comprises a material selected from the group consisting of alumina, aluminum nitride, aluminum fluoride and barium titanate.

29. The sub-structure of claim 28 wherein the barrier layer has a thickness of about 20 nm to about 50 nm.

30. The sub-structure of claim 25 wherein the thick film dielectric layer is a composite thick film dielectric layer.

31. A method for making a sub-structure for use in a thick film dielectric electroluminescent display, the method comprising;

i) depositing a barrier layer onto a substrate;

ii) depositing a lower electrode onto the barrier layer; and

iii) depositing a thick film dielectric layer onto the lower electrode, the barrier layer being chemically inert with respect to the substrate and the lower electrode, the barrier layer inhibiting diffusion of at least one chemical species therethrough.

32. The method of claim 31 wherein the barrier layer has physical properties such that internal stress is minimized during fabrication of the sub-structure and the barrier layer and other layers of the sub-structure and display remain substantially crack-free.

33. The method of claim 31 wherein the thick film dielectric layer is a composite thick film dielectric layer.

34. A method for making a sub-structure for use in a thick film dielectric electroluminescent display, the method comprising;

i) depositing a lower electrode onto a substrate;

ii) depositing a barrier layer onto the lower electrode; and

iii) depositing a thick film dielectric layer onto the lower electrode, the barrier layer being chemically inert with respect to the lower electrode and the thick film dielectric layer, the barrier layer inhibiting diffusion of at least one chemical species therethrough.

35. The method of claim 34 wherein the barrier layer has physical properties such that internal stress is minimized during fabrication of the sub-structure and the barrier layer and other layers of the sub-structure and display remain substantially crack-free.

36. The method of claim 34 wherein the thick film dielectric layer is a composite thick film dielectric layer.

37. The method of any one of claim 34 wherein the barrier layer is selected from the group consisting of a layer of a material having a relative dielectric constant greater than about 50 and a layer of material having a lower relative dielectric constant and a thickness of at most about 50 nm.

38. The method of any one of claim 34 wherein the barrier layer comprises crystalline barium titanate.

39. The method of any one of claim 34 wherein the barrier layer has a thickness of at most about 50 nm and comprises a material selected from the group consisting of alumina, aluminum nitride, aluminum fluoride and barium titanate.

40. The method of claim 39 wherein the barrier layer has a thickness of about 20 nm to about 50 nm.

41. A sub-structure of a thick film dielectric electroluminescent display, the sub-structure comprising a barrier layer between a substrate and a thick film dielectric layer, the barrier layer being chemically inert with respect to the substrate and the thick film dielectric layer, the barrier layer inhibiting diffusion of at least one chemical species therethrough.

42. A sub-structure of claim 41 wherein the barrier layer has physical properties such that internal stress is minimized during fabrication of the sub-structure and the barrier layer and other layers of the sub-structure and display remain substantially crack-free.

43. A sub-structure of claim 41 wherein the thick film dielectric layer is a composite thick film dielectric layer.

44. A sub-structure of a thick film dielectric electroluminescent display, the sub-structure comprising, in sequence:

a substrate;

a barrier layer inhibiting diffusion of at least one chemical species therethrough;

a lower electrode; and

a composite thick film dielectric layer,

the barrier layer being chemically inert with respect to the substrate and the lower electrode, the barrier layer having physical properties such that internal stress is minimized during fabrication of the sub-structure and the barrier layer and other layers of the sub-structure and display remain substantially crack-free.