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Method of manufacturing nitride-based semiconductor light-emitting device

  • US 7,989,244 B2
  • Filed: 05/23/2007
  • Issued: 08/02/2011
  • Est. Priority Date: 08/11/2006
  • Status: Expired due to Fees
First Claim
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1. A method of manufacturing a nitride-based semiconductor light-emitting device, the method comprising:

  • forming a sacrificial layer having a wet etching property on a substrate;

    growing a protective layer by the growth of a thin film on an upper surface of the sacrificial layer, protecting the sacrificial layer in a reaction gas atmosphere for crystal growth, and facilitating epitaxial growth of a semiconductor layer to be formed on the protective layer;

    forming a semiconductor device including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on the protective layer; and

    removing the substrate from the semiconductor device by wet etching the sacrificial layer.

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