Method of manufacturing nitride-based semiconductor light-emitting device
First Claim
1. A method of manufacturing a nitride-based semiconductor light-emitting device, the method comprising:
- forming a sacrificial layer having a wet etching property on a substrate;
growing a protective layer by the growth of a thin film on an upper surface of the sacrificial layer, protecting the sacrificial layer in a reaction gas atmosphere for crystal growth, and facilitating epitaxial growth of a semiconductor layer to be formed on the protective layer;
forming a semiconductor device including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on the protective layer; and
removing the substrate from the semiconductor device by wet etching the sacrificial layer.
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Abstract
Provided is a method of manufacturing a nitride-based semiconductor light-emitting device having increased efficiency and increased output properties. The method may include forming a sacrificial layer having a wet etching property on a substrate, forming a protective layer on the sacrificial layer, protecting the sacrificial layer in a reaction gas atmosphere for crystal growth, and facilitating epitaxial growth of a semiconductor layer to be formed on the protective layer, forming a semiconductor device including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on the protective layer, and removing the substrate from the semiconductor device by wet etching the sacrificial layer.
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Citations
17 Claims
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1. A method of manufacturing a nitride-based semiconductor light-emitting device, the method comprising:
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forming a sacrificial layer having a wet etching property on a substrate; growing a protective layer by the growth of a thin film on an upper surface of the sacrificial layer, protecting the sacrificial layer in a reaction gas atmosphere for crystal growth, and facilitating epitaxial growth of a semiconductor layer to be formed on the protective layer; forming a semiconductor device including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on the protective layer; and removing the substrate from the semiconductor device by wet etching the sacrificial layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of manufacturing a nitride-based semiconductor light-emitting device, the method comprising:
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mounting a substrate in a reaction chamber; forming a sacrificial layer having a wet etching property on the substrate; annealing the sacrificial layer in a gas atmosphere including at least one material selected from the group consisting of nitrogen, oxygen, and argon or a vacuum atmosphere by maintaining the sacrificial layer at a temperature of about 100°
C. to about 1,400°
C. for about 0.1 minute to about 180 minutes and increasing a temperature of the reaction chamber at a ratio of about 1°
C. to about 100°
C. per second;forming a protective layer on the sacrificial layer, protecting the sacrificial layer in a reaction gas atmosphere for crystal growth and facilitating the epitaxial growth of a semiconductor layer to be formed on the protective layer; forming a semiconductor device including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on the protective layer; and removing the substrate from the semiconductor device by wet etching the sacrificial layer.
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17. A method of manufacturing a nitride-based semiconductor light-emitting device, the method comprising:
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mounting a substrate in a reaction chamber; forming a sacrificial layer having a wet etching property on the substrate; forming a protective layer on the sacrificial layer, protecting the sacrificial layer in a reaction gas atmosphere for crystal growth and facilitating the epitaxial growth of a semiconductor layer to be formed on the protective layer; annealing the protective layer in a gas atmosphere including at least one material selected from the group consisting of nitrogen, oxygen, and argon or a vacuum atmosphere by maintaining the sacrificial layer at a temperature of about 100°
C. to about 1,400°
C. for about 0.1 minute to about 180 minutes and increasing a temperature of the reaction chamber at a ratio of about 1°
C. to about 100°
C. per second;forming a semiconductor device including an n-type semiconductor layer;
an active layer, and a p-type semiconductor layer on the protective layer; andremoving the substrate from the semiconductor device by wet etching the sacrificial layer.
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Specification