Methods of forming isolated active areas, trenches, and conductive lines in semiconductor structures and semiconductor structures including the same
First Claim
Patent Images
1. A method of forming semiconductor structures, the method comprising:
- forming a first expendable material on a substrate;
patterning the first expendable material in a first direction on the substrate;
trimming the first expendable material;
after trimming the first expendable material, forming a pattern of first spacers on sidewalls of the first expendable material;
removing the first expendable material;
transferring the pattern of first spacers into the substrate;
patterning a second expendable material in a second direction on the substrate;
forming a pattern of second spacers on sidewalls of the second expendable material;
removing the second expendable material; and
transferring the pattern of second spacers into the substrate to form trenches between the second spacers.
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Abstract
Methods of pitch doubling of asymmetric features and semiconductor structures including the same are disclosed. In one embodiment, a single photolithography mask may be used to pitch double three features, for example, of a DRAM array. In one embodiment, two wordlines and a grounded gate over field may be pitch doubled. Semiconductor structures including such features are also disclosed.
150 Citations
18 Claims
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1. A method of forming semiconductor structures, the method comprising:
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forming a first expendable material on a substrate; patterning the first expendable material in a first direction on the substrate; trimming the first expendable material; after trimming the first expendable material, forming a pattern of first spacers on sidewalls of the first expendable material; removing the first expendable material; transferring the pattern of first spacers into the substrate; patterning a second expendable material in a second direction on the substrate; forming a pattern of second spacers on sidewalls of the second expendable material; removing the second expendable material; and transferring the pattern of second spacers into the substrate to form trenches between the second spacers. - View Dependent Claims (2, 3, 4)
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5. A method of forming sublithographic trenches in a semiconductor structure, the method comprising:
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forming an expendable material on a substrate, the substrate on which the expendable material is formed comprising isolated active areas prior to forming the expendable material thereon; patterning the expendable material; forming spacers on sidewalls of the expendable material; forming a sacrificial material adjacent the spacers; removing the spacers to form a plurality of gaps between the sacrificial material and the expendable material; and etching the substrate through the plurality of gaps to form a plurality of trenches therein which individually extend across multiple of the isolated active areas. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12)
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13. A method of forming conductive lines on a semiconductor structure, the method comprising:
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forming a first expendable material on a substrate comprising isolated active areas and sublithographic gate trenches; patterning the first expendable material; forming spacers on sidewalls of the first expendable material; forming a second expendable material adjacent the spacers, the second expendable material and the first expendable material defining openings over the substrate; after forming the second expendable material and after defining said openings, forming a sacrificial material within the openings; removing the first expendable material and the second expendable material; forming trenches in the substrate between the spacers and the sacrificial material; and filling the trenches with a conductive material. - View Dependent Claims (14, 15, 16, 18)
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17. A method of forming conductive lines on a semiconductor structure, the method comprising:
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forming a first expendable material on a substrate comprising isolated active areas and sublithographic gate trenches; patterning the first expendable material; forming spacers on sidewalls of the first expendable material; forming a second expendable material adjacent the spacers, the second expendable material and the first expendable material defining openings over the substrate; forming a sacrificial material within the openings; removing the first expendable material and the second expendable material; forming trenches in the substrate between the spacers and the sacrificial material; filling the trenches with a conductive material; and further comprising forming the sublithographic gate trenches in the substrate prior to forming a first expendable material on the substrate.
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Specification