Semiconductor device gate structure including a gettering layer
First Claim
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1. A method of fabricating a semiconductor device, comprising:
- providing a semiconductor substrate;
forming an interface layer on the semiconductor substrate;
forming a gate dielectric layer on the interface layer;
forming a gettering layer on the gate dielectric layer, wherein the gettering layer includes an oxygen-gettering, dielectric composition;
removing the gettering layer; and
forming a gate electrode on the high-k dielectric layer, wherein the gate electrode includes metal.
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Abstract
A method is provided that allows for maintaining a desired equivalent oxide thickness (EOT) by reducing the thickness of an interfacial layer in a gate structure. An interfacial layer is formed on a substrate, a gate dielectric layer such as, a high-k gate dielectric, is formed on the interfacial layer. A gettering layer is formed on the substrate overlying the interfacial layer. The gettering layer may function to getter oxygen from the interfacial layer such that the interfacial layer thickness is decreased and/or restricted from growth.
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Citations
18 Claims
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1. A method of fabricating a semiconductor device, comprising:
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providing a semiconductor substrate; forming an interface layer on the semiconductor substrate; forming a gate dielectric layer on the interface layer; forming a gettering layer on the gate dielectric layer, wherein the gettering layer includes an oxygen-gettering, dielectric composition; removing the gettering layer; and forming a gate electrode on the high-k dielectric layer, wherein the gate electrode includes metal. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of fabricating a gate structure, comprising:
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providing a substrate; forming an interface layer on the substrate, wherein the interface layer includes silicon oxide having a first thickness; forming a gettering layer overlying the interface layer; reducing the thickness of the interface layer to a second thickness by gettering oxygen from the interface layer to the gettering layer; removing the gettering layer; and depositing a metal layer to form a gate electrode. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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14. A method of semiconductor fabrication, comprising:
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providing a semiconductor substrate; forming an interface layer on the semiconductor substrate; forming a gate dielectric layer on the interface layer; and forming a gettering metal layer on the gate dielectric layer, wherein the gettering metal layer includes an oxygen-gettering composition; and forming a metal gate electrode on the substrate overlying the gate dielectric layer. - View Dependent Claims (15, 16, 17, 18)
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Specification