Doping method
First Claim
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1. A method of depositing a III-V compound semiconductor film on a substrate comprising the steps of:
- a) providing a substrate in a deposition chamber;
b) conveying a Group IIIA metal compound in a gaseous phase to the deposition chamber;
c) conveying a Group VA compound in a gaseous phase to the deposition chamber;
d) conveying a germanium dopant compound of the formula RxGeHy in a gaseous phase to the deposition chamber;
e) decomposing the Group IIIA metal compound, the Group VA compound and the germanium dopant compound in the deposition chamber; and
f) depositing a germanium doped III-V compound semiconductor film on the substrate;
wherein each R is independently chosen from (C3-C7)branched alkyl, (C3-C7)cyclic alkyl, (C5-C20)cyclopentadienyl and NR1R2;
R1 and R2 are independently chosen from H and (C1-C6)alkyl;
x is an integer from 1-4;
y is an integer from 0-3; and
x+y=4.
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Abstract
Methods of doping a III-V compound semiconductor film are disclosed.
27 Citations
6 Claims
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1. A method of depositing a III-V compound semiconductor film on a substrate comprising the steps of:
- a) providing a substrate in a deposition chamber;
b) conveying a Group IIIA metal compound in a gaseous phase to the deposition chamber;
c) conveying a Group VA compound in a gaseous phase to the deposition chamber;
d) conveying a germanium dopant compound of the formula RxGeHy in a gaseous phase to the deposition chamber;
e) decomposing the Group IIIA metal compound, the Group VA compound and the germanium dopant compound in the deposition chamber; and
f) depositing a germanium doped III-V compound semiconductor film on the substrate;
wherein each R is independently chosen from (C3-C7)branched alkyl, (C3-C7)cyclic alkyl, (C5-C20)cyclopentadienyl and NR1R2;
R1 and R2 are independently chosen from H and (C1-C6)alkyl;
x is an integer from 1-4;
y is an integer from 0-3; and
x+y=4. - View Dependent Claims (2, 3, 4, 5, 6)
- a) providing a substrate in a deposition chamber;
Specification
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Current AssigneeRohm and Haas Electronic Materials LLC (DuPont de Nemours, Inc.)
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Original AssigneeRohm and Haas Electronic Materials LLC (DuPont de Nemours, Inc.)
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InventorsShenai-Khatkhate, Deodatta Vinayak
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Primary Examiner(s)Mulpuri; Savitri
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Application NumberUS12/819,935Publication NumberTime in Patent Office407 DaysField of Search438 22- 47, 438478-506US Class Current438/478CPC Class CodesH01L 21/02538 Group 13/15 materialsH01L 21/02576 N-typeH01L 21/0262 Reduction or decomposition ...H01L 33/305 characterised by the doping...H01L 33/325 characterised by the doping...
