Display device
First Claim
Patent Images
1. A display device comprising:
- a scan line;
a common wiring;
a pixel portion comprising a pixel electrode and a thin film transistor, the thin film transistor including a first oxide semiconductor film; and
a first non-linear element comprising;
a first gate electrode connected to the scan line;
a first gate insulating film over the first gate electrode;
a first wiring layer over the first gate insulating film;
a second wiring layer over the first gate insulating film; and
a second oxide semiconductor film above and in contact with the first gate insulating film, the first wiring layer, and the second wiring layer,wherein the first gate electrode is electrically connected to the scan line,wherein the first gate electrode and the scan line are formed of the same material,wherein the first wiring layer is electrically connected to the common wiring,wherein the first wiring layer and the common wiring are formed of the same material, andwherein the second wiring layer is directly connected to the scan line.
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Accused Products
Abstract
The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first wiring layer and a second wiring layer which are over the gate insulating film and whose end portions overlap with the gate electrode; and an oxide semiconductor layer which is over the gate electrode and in contact with the gate insulating film and the end portions of the first wiring layer and the second wiring layer. The gate electrode of the non-linear element and a scan line or a signal line is included in a wiring, the first or second wiring layer of the non-linear element is directly connected to the wiring so as to apply the potential of the gate electrode.
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Citations
28 Claims
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1. A display device comprising:
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a scan line; a common wiring; a pixel portion comprising a pixel electrode and a thin film transistor, the thin film transistor including a first oxide semiconductor film; and a first non-linear element comprising; a first gate electrode connected to the scan line; a first gate insulating film over the first gate electrode; a first wiring layer over the first gate insulating film; a second wiring layer over the first gate insulating film; and a second oxide semiconductor film above and in contact with the first gate insulating film, the first wiring layer, and the second wiring layer, wherein the first gate electrode is electrically connected to the scan line, wherein the first gate electrode and the scan line are formed of the same material, wherein the first wiring layer is electrically connected to the common wiring, wherein the first wiring layer and the common wiring are formed of the same material, and wherein the second wiring layer is directly connected to the scan line. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A display device comprising:
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a signal line; a common wiring; a pixel portion comprising a pixel electrode and a thin film transistor, the thin film transistor including a first oxide semiconductor film; and a first non-linear element comprising; a first gate electrode connected to the signal line; a first gate insulating film over the first gate electrode; a first wiring layer over the first gate insulating film; a second wiring layer over the first gate insulating film; and a second oxide semiconductor film above and in contact with the first gate insulating film, the first wiring layer, and the second wiring layer, wherein the first gate electrode is electrically connected to the signal line, wherein the first gate electrode and the signal line are formed of the same material, wherein the first wiring layer is electrically connected to the common wiring, wherein the first wiring layer and the common wiring are formed of the same material, and wherein the second wiring layer is directly connected to the signal line. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A display device comprising:
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a substrate; a scan line over the substrate; a signal line intersecting with the scan line over the substrate; a pixel portion including pixel electrodes, the pixel electrodes being arranged in matrix in the pixel portion; and a first non-linear element provided over the substrate in a region outside the pixel portion, wherein the pixel portion comprises a thin film transistor in which a channel formation region is formed in a first oxide semiconductor film, wherein the thin film transistor comprises; a first gate electrode connected to the scan line; a first wiring layer connected to the signal line and the first oxide semiconductor film; and a second wiring layer connected to one of the pixel electrodes and the first oxide semiconductor film, wherein the first non-linear element comprises; a second gate electrode; a gate insulating film over the second gate electrode; a first wiring layer and a second wiring layer over the gate insulating film, wherein end portions of the first wiring layer and the second wiring layer are overlapped with the second gate electrode; and a second oxide semiconductor film overlapping with the second gate electrode, wherein the second oxide semiconductor film is over and in contact with the gate insulating film and the end portions of the first wiring layer and the second wiring layer, wherein the second gate electrode is connected to one of the scan line and the signal line, and wherein the first wiring layer of the first non-linear element is directly connected to a gate electrode layer including the second gate electrode and the one of the scan line and the signal line. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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22. A display device comprising:
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a substrate; a scan line over the substrate; a signal line intersecting with the scan line over the substrate; a pixel portion including pixel electrodes, the pixel electrodes being arranged in matrix in the pixel portion; and a first non-linear element provided over the substrate in a region outside the pixel portion, wherein the pixel portion comprises a thin film transistor, the thin film transistor comprising; a first gate electrode connected to the scan line; a first gate insulating film over the first gate electrode; a first wiring layer over the first gate insulating film, the first wiring layer being connected to the signal line; a second wiring layer over the first gate insulating film, the second wiring layer being connected to one of the pixel electrodes; and a first oxide semiconductor film above and in contact with the first gate insulating film, the first wiring layer, and the second wiring layer, wherein the first non-linear element comprises; a second gate electrode; a second gate insulating film over the second gate electrode; a first wiring layer and a second wiring layer over the second gate insulating film, wherein end portions of the first wiring layer and the second wiring layer are overlapped with the second gate electrode; and a second oxide semiconductor film overlapping with the second gate electrode, wherein the second oxide semiconductor film is over and in contact with the second gate insulating film and the end portions of the first wiring layer and the second wiring layer, wherein the second gate electrode is connected to one of the scan line and the signal line, and wherein the first wiring layer of the first non-linear element is directly connected to a gate electrode layer including the second gate electrode and the one of the scan line and the signal line. - View Dependent Claims (23, 24, 25, 26, 27, 28)
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Specification