Semiconductor light emitting device and method of fabricating the same

• US 7,989,820 B2
• Filed: 06/18/2008
• Issued: 08/02/2011
• Est. Priority Date: 06/22/2007
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Lee, Sang Youl
• Primary Examiner(s): Parker; Ken A
• Assistant Examiner(s): Diaz; Jose R
• Application Number:
  US12/516,956
• Publication Number:
  US 20100065872A1
• Time in Patent Office: 1,140 Days
• Field of Search: 257/79, 257/81, 257/90, 257/103, 257/94, 438/22
• US Class Current: 257/79
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device comprises: a light emitting structure comprising a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer; a reflective electrode layer under the light emitting structure, and an outer protection layer at an outer circumference of the reflective electrode layer.

Claims

1. A light emitting device comprising:

a first conductive semiconductor layer formed with a first electrode;

an active layer formed on the first conductive semiconductor layer;

a second conductive semiconductor layer formed on the active layer, a height of a center portion of the second conductive semiconductor layer is different from a height of an outer circumference portion of the second conductive semiconductor layer;

a reflective electrode layer formed on the second conductive semiconductor layer; and

a conductive support substrate formed on the reflective electrode layer.

2. The light emitting device of claim 1, wherein the height of the outer circumference portion of the second conductive semiconductor layer is higher than the height of the center portion of the second conductive semiconductor layer.

3. The light emitting device of claim 1, wherein the outer circumference portion of the second conductive semiconductor layer comprises a same semiconductor material or a different semiconductor material from a semiconductor material of the center portion of the second conductive semiconductor layer.

4. The light emitting device of claim 3, wherein a semiconductor layer of the outer circumference portion includes at least one of an n-type semiconductor layer, a p-type semiconductor layer, and an undoped semiconductor layer.

5. The light emitting device of claim 1, wherein the first conductive semiconductor layer is a p-type semiconductor layer and the second conductive semiconductor layer is an n-type semiconductor layer.

6. The light emitting device of claim 1, comprising an etching groove which is formed by etching an outer circumference of each of the layers from the first conductive semiconductor layer to a portion of the second conductive semiconductor layer.

7. A method of manufacturing a light emitting device, the method comprising:

forming a first conductive semiconductor layer on a substrate;

forming an active layer on the first conductive semiconductor layer;

forming a second conductive semiconductor layer on the active layer;

forming an outer protection semiconductor layer on an outer circumference portion of the second conductive semiconductor layer; and

forming a reflective electrode layer on the second conductive semiconductor layer and the outer protection semiconductor layer,

wherein forming the outer protection semiconductor layer comprises;

forming an oxide layer pattern on a center portion area of the second conductive semiconductor layer;

forming the outer protection semiconductor layer on a circumference portion area of the second conductive semiconductor layer where the oxide layer pattern is not formed; and

removing the oxide layer pattern.

8. The method of claim 7, comprising:

forming a conductive support substrate on the reflective electrode layer;

removing the substrate from the first conductive semiconductor layer; and

disposing the conductive support substrate on a base and then etching an outer circumference of each layer of the layers from the first conductive semiconductor layer to a portion of the second conductive semiconductor layer.

9. The method of claim 8, comprising:

forming a transparent electrode or a first electrode at the first conductive semiconductor layer from which the substrate has been removed.

10. The method of claim 7, wherein the first conductive semiconductor layer is an n-type semiconductor layer and the second conductive semiconductor layer is a p-type semiconductor layer.

11. The method of claim 7, wherein the outer protection semiconductor layer includes at least one of an n-type semiconductor layer, a p-type semiconductor layer, and an undoped semiconductor layer.