Method of forming a dielectric layer on a semiconductor light emitting device

• US 7,989,824 B2
• Filed: 04/23/2010
• Issued: 08/02/2011
• Est. Priority Date: 06/03/2009
• Status: Active Grant

• Current Assignee: Lumileds LLC (Apollo Global Management, Inc.)
• Original Assignee: Philips Lumileds Lighting Company LLC (Apollo Global Management, Inc.), Koninklijke Philips Electronics N.V. (Koninklijke Philips N.V.)
• Inventors: Aldaz, Rafael I., Neff, James G.
• Primary Examiner(s): Mulpuri; Savitri
• Application Number:
  US12/766,221
• Publication Number:
  US 20100308367A1
• Time in Patent Office: 466 Days
• Field of Search: 257 88-103
• US Class Current: 257/91
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/005 Processes
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is formed. A first metal contact is formed on a portion of the n-type region and a second metal contact is formed on a portion of the p-type region. The first and second metal contacts are formed on a same side of the semiconductor structure. A dielectric material is disposed between the first and second metal contacts. The dielectric material is in direct contact with a portion of the semiconductor structure, a portion of the first metal contact, and a portion of the second metal contact. A planar surface is formed including a surface of the first metal contact, a surface of the second metal contact, and a surface of the dielectric material

Claims

1. A device comprising:

a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region;

a first metal contact disposed on a portion of the n-type region and a second metal contact disposed on a portion of the p-type region, wherein;

the first and second metal contacts are formed on a same side of the semiconductor structure;

the first and second metal contacts are substantially planar; and

the first metal contact is in direct contact with the n-type region and the second metal contact is in direct contact with the p-type region;

wherein the first metal contact is formed on a portion of the n-type region exposed by etching away a portion of the p-type region and the light emitting layer

a dielectric material disposed between the first and second metal contacts, wherein the dielectric material is in direct contact with a portion of the semiconductor structure, a portion of the first metal contact, and a portion of the second metal contact; and

a top surface of the device, including a surface of the first metal contact, a surface of the second metal contact, and a surface of the dielectric material, is sufficiently planar to support the semiconductor structure during removal of a growth substrate.

2. The device of claim 1 wherein the first metal contact substantially surrounds the second metal contact.

3. The device of claim 1 wherein a top surface of the dielectric layer is less than 500 nm below a top surface of the second metal contact.

4. The device of claim 1 wherein the first metal contact surrounds the light emitting layer and includes a plurality of fingers which extend toward a center of the device.

5. The device of claim 1 wherein first metal contact is thicker than the second metal contact.

6. The device of claim 1 wherein the dielectric material is one of a polymer, polyimide, and benzocyclobutene.