Highly efficient III-nitride-based top emission type light emitting device having large area and high capacity

• US 7,989,828 B2
• Filed: 08/17/2006
• Issued: 08/02/2011
• Est. Priority Date: 08/19/2005
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Song, June-O
• Primary Examiner(s): Hu; Shouxiang
• Application Number:
  US11/506,016
• Publication Number:
  US 20070040162A1
• Time in Patent Office: 1,811 Days
• Field of Search: 257/79, 257/81, 257/98, 257/99, 257/E33.065
• US Class Current: 257/98
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

A nitride-based top emission type light emitting device and a method of manufacturing the same, the light emitting device including an n-nitride-based cladding layer, a p-nitride-based cladding layer, a nitride-based active layer, and a multiple p-ohmic contact layer. The multiple p-ohmic contact layer includes at least one pair of an ohmic modification layer and a transparent conducting layer. The ohmic modification layer includes a poly-crystal nitride layer or an amorphous nitride layer including nitrogen (N) combined with at least one of aluminum (Al), indium (In) or gallium (Ga). The ohmic modification layer is prepared in the form of a droplet or a thin film. Pores or dots are formed on the poly-crystal nitride layer or the amorphous nitride layer so as to provide the multiple p-ohmic contact layer with a photonic crystal effect.

Claims

1. A nitride-based top emission type light emitting device comprising:

an n-nitride-based cladding layer;

a p-nitride-based cladding layer;

a nitride-based active layer interposed between the n-nitride-based cladding layer and the p-nitride-based cladding layer; and

a p-ohmic contact multi-layer disposed on the p-nitride-based cladding layer,

wherein the p-ohmic contact multi-layer includes at least one pair of an ohmic modification layer and a transparent current spread layer on the ohmic modification layer, the ohmic modification layer being a poly-crystal nitride layer or an amorphous nitride layer including nitrogen (N) combined with at least one of aluminum (Al), indium (In) and gallium (Ga), and wherein the ohmic modification layer is not a nitride-based epitaxial layer, and wherein the poly-crystal nitride layer or the amorphous nitride layer comprises micro-sized pores or dots aligned to have photonic crystal effect,

wherein a new phase is formed at least at an interface between the ohmic modification layer and the current spread layer through chemical reaction therebetween by annealing.

2. The nitride-based top emission type light emitting device of claim 1, wherein the current spread layer includes a transparent conducting oxide layer or a transparent conducting nitride layer,

the transparent conducting oxide layer formed by combining oxygen (O) with at least one of indium (In), tin (Sn), zinc (Zn), gallium (Ga), cadmium (Cd), magnesium (Mg), beryllium (Be), silver (Ag), molybdenum (Mo), vanadium (V), copper (Cu), iridium (Ir), rhodium (Rh), ruthenium (Ru), tungsten (W), titanium (Ti), tantalum (Ta), cobalt (Co), nickel (Ni), manganese (Mn), platinum (Pt), palladium (Pd), aluminum (Al), and lanthanum (La), and

the transparent conducting nitride layer including transitional metal nitride formed by combining nitrogen (N) with titanium (Ti), tungsten (W), tantalum (Ta), vanadium (V), chrome (Cr), zirconium (Zr), niobium (Nb), hafnium (Hf), rhenium (Re) or molybdenum (Mo).

3. The nitride-based top emission type light emitting device of claim 2, wherein the amorphous nitride-based layer or the poly-crystal nitride-based layer is formed by an electrochemical method, a physical method, or a chemical method before the current spread layer is deposited during a process of forming the p-ohmic contact multi-layer.

4. The nitride-based top emission type light emitting device of claim 1, wherein the ohmic modification layer has a thickness in a range between 0.1 nanometer and 100 nanometer and the current spread layer has a thickness in a range between 1 nanometer and 1000 nanometer.

5. The nitride-based top emission type light emitting device of claim 4, wherein the amorphous nitride-based layer or the poly-crystal nitride-based layer is formed by an electrochemical method, a physical method, or a chemical method before the current spread layer is deposited during a process of forming the p-ohmic contact multi-layer.

6. The nitride-based top emission type light emitting device of claim 1, wherein the ohmic modification layer is prepared in a form of a droplet, a nano-dot or a thin film including at least one of aluminum (Al), indium (In) and gallium (Ga).

7. The nitride-based top emission type light emitting device of claim 6, wherein the amorphous nitride-based layer or the poly-crystal nitride-based layer is formed by an electrochemical method, a physical method, or a chemical method before the current spread layer is deposited during a process of forming the p-ohmic contact multi-layer.

8. The nitride-based top emission type light emitting device of claim 1, wherein the amorphous nitride-based layer or the poly-crystal nitride-based layer is formed by an electrochemical method, a physical method or a chemical method before the current spread layer is deposited during a process of forming the p-ohmic contact multi-layer.