Light emitting device and manufacturing method thereof
First Claim
Patent Images
1. A light emitting device, comprising:
- a first conductive semiconductor layer;
an active layer on the first conductive semiconductor;
a second conductive semiconductor layer on the active layer;
a roughness layer, including a dot shape, on the second conductive semiconductor layer;
a third conductive semiconductor layer on the roughness layer; and
a second electrode on the third conductive semiconductor layer,wherein the roughness layer is disposed between the third conductive semiconductor layer and the second conductive semiconductor layer,wherein the third conductive semiconductor layer is disposed between the second electrode and the roughness layer, andwherein the third conductive semiconductor layer has a rough surface, andwherein a polarity of the third conductive semiconductor layer is opposite to a polarity of the second conductive semiconductor layer.
2 Assignments
0 Petitions
Accused Products
Abstract
Disclosed are a light emitting device and a manufacturing method thereof. The light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor, a second conductive semiconductor layer on the active layer, and a dot-shaped roughness layer on the second conductive semiconductor layer.
-
Citations
18 Claims
-
1. A light emitting device, comprising:
-
a first conductive semiconductor layer; an active layer on the first conductive semiconductor; a second conductive semiconductor layer on the active layer; a roughness layer, including a dot shape, on the second conductive semiconductor layer; a third conductive semiconductor layer on the roughness layer; and a second electrode on the third conductive semiconductor layer, wherein the roughness layer is disposed between the third conductive semiconductor layer and the second conductive semiconductor layer, wherein the third conductive semiconductor layer is disposed between the second electrode and the roughness layer, and wherein the third conductive semiconductor layer has a rough surface, and wherein a polarity of the third conductive semiconductor layer is opposite to a polarity of the second conductive semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. A light emitting device, comprising:
-
a first conductive semiconductor layer; an active layer on the first conductive semiconductor; a second conductive semiconductor layer on the active layer; a roughness layer including a dot shape on the second conductive semiconductor layer, a third conductive semiconductor layer on the roughness layer; and a second electrode on the third conductive semiconductor layer, wherein the roughness layer is disposed between the third conductive semiconductor layer and the second conductive semiconductor layer, and the third conductive semiconductor layer is disposed between the second electrode and the roughness layer, and wherein the roughness layer is formed of an indium dot as the dot shape. - View Dependent Claims (17, 18)
-
-
12. A light emitting device, comprising:
-
a first conductive semiconductor layer; an active layer on the first conductive semiconductor; a second conductive semiconductor layer on the active layer; a roughness layer including a dot shape on the second conductive semiconductor layer, a third conductive semiconductor layer on the roughness layer; and a second electrode on the third conductive semiconductor layer, wherein the roughness layer is disposed between the third conductive semiconductor layer and the second conductive semiconductor layer, and the third conductive semiconductor layer is disposed between the second electrode and the roughness layer, wherein the third conductive semiconductor layer comprises a first cap layer on the roughness layer, and a second cap layer comprising a superlattice layer on the first cap layer, and wherein the superlattice layer comprises at least two layers alternatively stacked, the at least two layers being selected from the group consisting of AlInGaN, InGaN, GaN, AlInN and AlN. - View Dependent Claims (13, 14, 15)
-
-
16. A light emitting device, comprising:
-
a first conductive semiconductor layer; an active layer on the first conductive semiconductor; a second conductive semiconductor layer on the active layer; a roughness layer including a dot shape on the second conductive semiconductor layer, a third conductive semiconductor layer on the roughness layer; and a second electrode on the third conductive semiconductor layer, wherein the roughness layer is disposed between the third conductive semiconductor layer and the second conductive semiconductor layer, and the third conductive semiconductor layer is disposed between the second electrode and the roughness layer, and wherein the second electrode comprises at least one layer including material selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au and Hf, and combinations thereof.
-
Specification