Fast injection optical switch
First Claim
1. A fast injection optical switch, comprising:
- a thyristor including a plurality of semiconducting layers having alternating positive and negative conductivity types, wherein the plurality of semiconducting layers includes a outer doped layer and a switching layer;
an area of the thyristor configured to receive a light beam to be directed through at least one of the plurality of semiconducting layers and exit the thyristor at a predetermined angle; and
at least two electrodes coupled to the thyristor and configured to enable a voltage to be applied to facilitate carriers from the outer doped layer to be directed to the switching layer, wherein sufficient carriers are directed to the switching layer to provide a change in refractive index of the switching layer to redirect at least a portion of the light beam to exit the thyristor at a deflection angle different than the predetermined angle.
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Accused Products
Abstract
A fast injection optical switch is disclosed. The optical switch includes a thyristor having a plurality of layers including an outer doped layer and a switching layer. An area of the thyristor is configured to receive a light beam to be directed through at least one of the plurality of layers and exit the thyristor at a predetermined angle. At least two electrodes are coupled to the thyristor and configured to enable a voltage to be applied to facilitate carriers from the outer doped layer to be directed to the switching layer. Sufficient carriers can be directed to the switching layer to provide a change in refractive index of the switching layer to redirect at least a portion of the light beam to exit the thyristor at a deflection angle different from the predetermined angle.
31 Citations
18 Claims
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1. A fast injection optical switch, comprising:
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a thyristor including a plurality of semiconducting layers having alternating positive and negative conductivity types, wherein the plurality of semiconducting layers includes a outer doped layer and a switching layer; an area of the thyristor configured to receive a light beam to be directed through at least one of the plurality of semiconducting layers and exit the thyristor at a predetermined angle; and at least two electrodes coupled to the thyristor and configured to enable a voltage to be applied to facilitate carriers from the outer doped layer to be directed to the switching layer, wherein sufficient carriers are directed to the switching layer to provide a change in refractive index of the switching layer to redirect at least a portion of the light beam to exit the thyristor at a deflection angle different than the predetermined angle. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of making a fast injection optical switch for redirecting an optical beam, comprising:
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forming a thyristor having a plurality of semiconducting layers including alternating positive and negative conductivity types, wherein the plurality of semiconducting layers includes an outer doped layer and a switching layer; configuring an area of the thyristor to receive a light beam to be directed through at least one of the plurality of semiconducting layers and exit the thyristor at a predetermined angle; and connecting at least two electrodes to the thyristor to enable a voltage to be applied to enable carriers from the outer doped layer to be directed to the switching layer, wherein sufficient carriers are directed to the switching layer to provide a change in refractive index of the switching layer to redirect at least a portion of the light beam to exit the thyristor at a deflection angle different than the predetermined angle. - View Dependent Claims (16, 17, 18)
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Specification