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Fast injection optical switch

  • US 7,989,841 B1
  • Filed: 07/31/2007
  • Issued: 08/02/2011
  • Est. Priority Date: 07/31/2007
  • Status: Active Grant
First Claim
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1. A fast injection optical switch, comprising:

  • a thyristor including a plurality of semiconducting layers having alternating positive and negative conductivity types, wherein the plurality of semiconducting layers includes a outer doped layer and a switching layer;

    an area of the thyristor configured to receive a light beam to be directed through at least one of the plurality of semiconducting layers and exit the thyristor at a predetermined angle; and

    at least two electrodes coupled to the thyristor and configured to enable a voltage to be applied to facilitate carriers from the outer doped layer to be directed to the switching layer, wherein sufficient carriers are directed to the switching layer to provide a change in refractive index of the switching layer to redirect at least a portion of the light beam to exit the thyristor at a deflection angle different than the predetermined angle.

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