Semiconductor device and method of manufacturing the same

• US 7,989,947 B2
• Filed: 03/04/2008
• Issued: 08/02/2011
• Est. Priority Date: 03/06/2007
• Status: Active Grant

• Current Assignee: Godo Kaisha IP Bridge 1 (IP Bridge, Inc.)
• Original Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Inventors: Otani, Katsumi
• Primary Examiner(s): Landau; Matthew C
• Assistant Examiner(s): Hall; Jessica
• Application Number:
  US12/041,793
• Publication Number:
  US 20080217753A1
• Time in Patent Office: 1,246 Days
• Field of Search: 257/706, 257/712, 257/713, 257/E23.102, 257/796, 257/434, 257/680, 438/122, 438/124, 438/126
• US Class Current: 257/706
• CPC Class Codes: H01L 21/565 Moulds
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/451 with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/83851 being an anisotropic conductive adhesive
• CPC Class Codes: H01L 2224/92247 the second connecting process involving a wire connector
• CPC Class Codes: H01L 23/3128 the substrate having spherical bumps for external connection
• CPC Class Codes: H01L 23/4334 Auxiliary members in encapsulations H01L23/49568 takes precedence
• CPC Class Codes: H01L 23/49816 Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/00015 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/181 : Encapsulation

Abstract

A semiconductor device includes a semiconductor element 1, a thermal conductor 91 located opposite a major surface of the semiconductor element 1, and a mold resin member 6 molding the semiconductor element 1 and at least a part of the thermal conductor 91, wherein at least a part of a top surface of the thermal conductor 91 has an exposed portion exposed from the mold resin member 6, the exposed portion of the thermal conductor 91 has an opening 11, and a periphery of the opening 11 forms a projecting portion 91b projecting toward an opposite side of the semiconductor element 1.

Claims

1. A semiconductor device comprising:

a semiconductor element;

a thermal conductor located opposite a first surface of the semiconductor element; and

a mold resin member molding the semiconductor element and a part of the thermal conductor,

wherein at least a part of a top surface of the thermal conductor has an exposed portion exposed from the mold resin member,

the exposed portion of the thermal conductor has an opening, and

a projecting portion projecting away from the semiconductor element is formed at an edge of the opening,

a top part of the projecting portion is higher than the surface of the mold resin exposed in the opening, and

the top of the projecting portion is higher than the top surface of the thermal conductor.

2. The semiconductor device according to claim 1, further comprising a substrate having a plurality of electrode terminals on a bottom surface,

wherein the thermal conductor is located opposite the first surface of the semiconductor element fixed to a top surface of the substrate.

3. The semiconductor device according to claim 2, wherein the thermal conductor is supported by a support portion fixed on the substrate.

4. The semiconductor device according to claim 3, wherein the support portion is formed by bending a part of the thermal conductor.

5. The semiconductor device according to claim 2, further comprising a plurality of thin metal wires electrically connecting the substrate and the semiconductor element together.

6. The semiconductor device according to claim 1, further comprising a die pad and a plurality of leads arranged around a periphery of the die pad and each having a bottom surface forming an external terminal and a top surface forming an internal terminal,

wherein the thermal conductor is located opposite the first surface of the semiconductor element fixed on the die pad.

7. The semiconductor device according to claim 6, wherein the thermal conductor is supported by a support portion fixed on a hanging lead connected to the die pad.

8. The semiconductor device according to claim 7, wherein the support portion is formed by bending a part of the thermal conductor.

9. The semiconductor device according to claim 6, further comprising a plurality of thin metal wires electrically connecting the lead and the semiconductor element together.

10. The semiconductor device according to claim 1, wherein the projecting portion of the thermal conductor is formed integrally with the other portions of the thermal conductor.

11. The semiconductor device according to claim 1, wherein a part of the projecting portion of the thermal conductor is flush with a plane substantially parallel to the other exposed portion of the thermal conductor.

12. The semiconductor device according to claim 1, wherein a part of the thermal conductor which is buried in the mold resin member has a roughened surface.

13. The semiconductor device according to claim 1, wherein the thermal conductor is connected to a ground terminal.

14. A method of manufacturing a semiconductor device, the method comprising the steps of:

providing a thermal conductor having an opening in the top surface of the thermal conductor and a projecting portion provided around an edge of the opening and projecting upward from a top surface of the thermal conductor;

mounting the thermal conductor so that a surface of the thermal conductor which is opposite a surface thereof from which the projecting portion projects is located opposite a first surface of a semiconductor element;

installing a molding die so that the projecting portion abuts against an inner wall of the molding die; and

injecting resin into the molding die through an injection port formed in the molding die and through the opening to mold the semiconductor element and the thermal conductor so as to expose the projecting portion wherein the top part of the projecting portion is higher than the surface of the mold resin exposed in the opening.

15. The method of manufacturing the semiconductor device according to claim 14, wherein the opening in the thermal conductor is formed so as to have a diameter larger than a diameter of the injection port in the molding die, and during resin injection, a circumference of the projecting portion formed around the edge of the opening in the thermal conductor entirely contacts an inner wall portion of the molding die which is located outside a periphery of the injection port.

16. The method of manufacturing the semiconductor device according to claim 14, wherein in the step of manufacturing the thermal conductor, a cylindrical mold having a tip portion smaller than the opening in the thermal conductor and a root portion larger than the opening is inserted into the opening in the thermal conductor to bend the edge of the opening in the thermal conductor to form the projecting portion.

17. The method of manufacturing the semiconductor device according to claim 14, wherein in the step of manufacturing the thermal conductor, the projecting portion is formed around the edge of the opening in the thermal conductor by using a first die to support the edge of the opening in the thermal conductor, using a second die to support a part of the thermal conductor which is located outside the periphery of the opening, and moving the second die along a thickness direction of the thermal conductor relative to the first die.

18. The method of manufacturing the semiconductor device according to claim 14, wherein in the step of manufacturing the thermal conductor, the projecting portion is formed, and the opening is then formed in a center of the projecting portion.

19. The method of manufacturing the semiconductor device according to claim 14, wherein in the step of manufacturing the thermal conductor, the projecting portion is formed by pressing using a mold projecting the edge of the opening in the thermal conductor.

20. The method of manufacturing the semiconductor device according to claim 14, wherein in the step of manufacturing the thermal conductor, the projecting portion is formed by pressing using a mold projecting a center of the thermal conductor, and the opening is then formed in a center of the projecting portion.