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Method of forming stacked-die integrated circuit

  • US 7,989,959 B1
  • Filed: 01/29/2009
  • Issued: 08/02/2011
  • Est. Priority Date: 01/29/2009
  • Status: Active Grant
First Claim
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1. An integrated circuit device, comprising:

  • a first die having circuitry formed in a first surface;

    a plurality of through-die vias formed in the first die, at least one through-die via of the plurality of through-die vias providing electrical connection between the circuitry of the first die and a second surface of the first die;

    a first plurality of contact pads formed in the second surface of the first die; and

    a second die mounted on the first die, the second die having circuitry and a second plurality of contact pads that are soldered to corresponding ones of the first plurality of contact pads;

    wherein first contact pads of the first plurality of contact pads and the corresponding contact pads of the second plurality of contact pads provide electrical connection between the circuitry of the first die and the circuitry of the second die by means of a through-die via; and

    wherein second contact pads of the first plurality of contact pads and the corresponding contact pads of the second plurality of contact pads are electrically isolated from the circuitry of the first die and electrically isolated from the circuitry of the second die.

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